configured to map the buffer chains before irradiation, and 1 MHz clock and
100 kHz input signals were applied by the AFG 3101C Function Generator during
irradiation. Output signals were monitored using the Tektronix DPO7254C Digital
Phosphor Oscilloscope. Figure 11 shows the schematic diagrams of (a) the buffer
chain circuit configured in the FPGA, which is composed of 1022 stages of unit
buffer blocks in serial connection for a chain, with eight chains connected in parallel,
and (b) a unit buffer block in the buffer chains. The input/output (I/O) logic shown in
Fig. 11 is composed of D-FF and a level shifter, which translates I/O signal voltage
and internal logic voltage (e.g., 3.3–1.8 V in this case).
The devices were evaluated by using Xe and Kr ions. Linear energy transfers
(LETs) of Xe and Kr was calculated by using SRIM [27] and found to be 68.9 and
40.3 MeV/(mg/cm
2 ) at the Si surface, respectively. Table 2 lists the irradiation
conditions; Table 3 lists the test conditions.
Fig. 9 (a) Schematic images of CAS that show ON and OFF states, (b) illustration of CAS-based
memory cell which is used in LUT (c) illustration of CAS-based routing MUX [24, 25], (d)
schematic diagram of programmable logic tile, consisting of two pairs of FF and four-input LUTs
[26]
An Evaluation of Single Event Effects by Heavy Ion Irradiation on Atom. . .
67
100 kHz input signals were applied by the AFG 3101C Function Generator during
irradiation. Output signals were monitored using the Tektronix DPO7254C Digital
Phosphor Oscilloscope. Figure 11 shows the schematic diagrams of (a) the buffer
chain circuit configured in the FPGA, which is composed of 1022 stages of unit
buffer blocks in serial connection for a chain, with eight chains connected in parallel,
and (b) a unit buffer block in the buffer chains. The input/output (I/O) logic shown in
Fig. 11 is composed of D-FF and a level shifter, which translates I/O signal voltage
and internal logic voltage (e.g., 3.3–1.8 V in this case).
The devices were evaluated by using Xe and Kr ions. Linear energy transfers
(LETs) of Xe and Kr was calculated by using SRIM [27] and found to be 68.9 and
40.3 MeV/(mg/cm
2 ) at the Si surface, respectively. Table 2 lists the irradiation
conditions; Table 3 lists the test conditions.
Fig. 9 (a) Schematic images of CAS that show ON and OFF states, (b) illustration of CAS-based
memory cell which is used in LUT (c) illustration of CAS-based routing MUX [24, 25], (d)
schematic diagram of programmable logic tile, consisting of two pairs of FF and four-input LUTs
[26]
An Evaluation of Single Event Effects by Heavy Ion Irradiation on Atom. . .
67