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N. Banno, M. Tada, T. Sakamoto, K. Okamoto, M. Miyamura, N. Iguchi,
and H. Hada
IEEE Transactions on Electron Devices 61 (2014) 3827–3832.
DOI: 10.1109/TED.2014.2355830
103. “Three-terminal nonvolatile resistive-change device integrated in Cu-BEOL”
M. Tada, K. Okamoto, N. Banno, T. Sakamoto, and H. Hada
IEEE Transactions on Electron Devices 61 (2014) 505–510.
DOI: 10.1109/TED.2013.2296036
104. “Atom switch technology for low-power nonvolatile logic application”
M. Tada, T. Sakamoto, M. Miyamura, N. Banno, K. Okamoto, and H. Hada
ECS Transactions 61(6) (2014) 57–64.
DOI: 10.1149/06106.0057ecst
105. “Conduction paths in Cu/amorphous-Ta 2 O 5 /Pt atomic switch: First-principles
studies”
B. Xiao, T. Gu, T. Tada, and S. Watanabe
Journal of Applied Physics 115 (2014) 034503.
DOI: 10.11063/1.4861724
106. “In-situ monitoring of oxide ion induced breakdown in amorphous tantalum
oxide thin film using acoustic emission measurement”
T. Tsuchiya, K. Ito, S. Miyoshi, M. Enoki, and S. Yamaguchi
Materials Transactions 55 (2014) 1553.
DOI: 10.2320/matertrans.M2014198
107. “Oxygen vacancy effects on an amorphous-TaO x -based resistive switch: A
first principles studies”
B. Xiao and S. Watanabe
Nanoscale 6 (2014) 10169–10178.
DOI: 10.1039/C4NR02173H
108. “In situ and non-volatile bandgap tuning of multilayer graphene oxide in an allsolid-state electric double-layer transistor”
T. Tsuchiya, K. Terabe, and M. Aono
Advanced Materials 26 (2014) 1087–1091.
DOI: 10.1002/adma.20134770
109. “Micro x-ray photoemission and Raman spectroscopy studies on bandgap
tuning of graphene oxide achieved by solid state ionics devices”
T. Tsuchiya, K. Terabe, and M. Aono
Applied Physics Letters 105 (2014) 183101.
DOI: 10.1063/1.4901103
110. “Self-organized atomic switch networks”
A. Z. Stieg, A. V. Avizienis, H. O. Sillin, C. Martin-Olmos, M. L. Lam,
M. Aono, and J. K. Gimzewski
Japanese Journal of Applied Physics 53 (2014) 01AAA02.
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258
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