2015
111. “Dynamic moderation of an electric field using a SiO 2 tunneling layer in TaO x -
based ReRAM”
Q. Wang, Y. Itoh, T. Tsuruoka, S. Ohtsuka, T. Shimizu, S. Shingubara,
T. Hasegawa, and M. Aono
Physica Status Solidi—Rapid Research Letters 9 (2015) 166–170.
DOI: 10.1002/pssr.201409531
112. “Position detection and observation of a conducting filament hidden under a
top electrode in a Ta 2 O 5 -based atomic switch”
A. Nayak, Q. Wang, Y. Itoh, T. Tsuruoka, T. Hasegawa, L. Boodhoo,
H. Mizuta, and M. Aono
Nanotechnology 26 (2015) 145702.
DOI: 10.1088/0957-4484/26/14/145702
113. “Redox reactions at Cu,Ag/Ta 2 O 5 interfaces and the effects of Ta 2 O 5 film
density on the forming process in atomic switch structures”
T. Tsuruoka, I. Valov, S. Tappertzhofen, J. van den Hurk, T. Hasegawa,
R. Waser, and M. Aono
Advanced Functional Materials 25 (2015) 6347–6381.
DOI: 10.1002/adfm.201500853
114. “Effects of temperature and ambient pressure on the resistive switching behavior of a polymer-based atomic switch”
S. R. Mohapatra, T. Tsuruoka, K. Krishnan, T. Hasegawa, and M. Aono
Journal of Materials Chemistry C 3 (2015) 5715–5720.
DOI: 10.1039/c5tc00842e
115. “Ultra-low voltage and ultra-low power consumption nonvolatile operation of
a three-terminal atomic switch”
Q. Wang, Y. Itoh, T. Tsuruoka, M. Aono, and T. Hasegawa
Advanced Materials 27 (2015) 6029–6033.
DOI: 10.1002/adma.201502678
116. “Nanosecond fast switching processes observed in gapless-type, Ta 2 O 5 -based
atomic switches”
T. Tsuruoka, T. Hasegawa, and M. Aono
Mater. Res. Soc. Symp. Proc. 1729 (2015).
DOI: 10.1557/opl.2015.93
117. “Interface structure in Cu/Ta 2 O 5 /Pt resistance switch: A first-principle study”
B. Xiao and S. Watanabe
ACS Applied Materials & Interfaces 7 (2015) 519–525.
DOI: 10.1021/am5066656
118. “Observation of a Ag protrusion on a Ag 2 S island using a scanning tunneling
microscope”
T. Ohno and T. Hasegawa
Results in Physics 5 (2015) 182–183.
DOI: 10.1016/j.rinp.2015.08.004
A List of Papers Related to the Atomic Switch
259
111. “Dynamic moderation of an electric field using a SiO 2 tunneling layer in TaO x -
based ReRAM”
Q. Wang, Y. Itoh, T. Tsuruoka, S. Ohtsuka, T. Shimizu, S. Shingubara,
T. Hasegawa, and M. Aono
Physica Status Solidi—Rapid Research Letters 9 (2015) 166–170.
DOI: 10.1002/pssr.201409531
112. “Position detection and observation of a conducting filament hidden under a
top electrode in a Ta 2 O 5 -based atomic switch”
A. Nayak, Q. Wang, Y. Itoh, T. Tsuruoka, T. Hasegawa, L. Boodhoo,
H. Mizuta, and M. Aono
Nanotechnology 26 (2015) 145702.
DOI: 10.1088/0957-4484/26/14/145702
113. “Redox reactions at Cu,Ag/Ta 2 O 5 interfaces and the effects of Ta 2 O 5 film
density on the forming process in atomic switch structures”
T. Tsuruoka, I. Valov, S. Tappertzhofen, J. van den Hurk, T. Hasegawa,
R. Waser, and M. Aono
Advanced Functional Materials 25 (2015) 6347–6381.
DOI: 10.1002/adfm.201500853
114. “Effects of temperature and ambient pressure on the resistive switching behavior of a polymer-based atomic switch”
S. R. Mohapatra, T. Tsuruoka, K. Krishnan, T. Hasegawa, and M. Aono
Journal of Materials Chemistry C 3 (2015) 5715–5720.
DOI: 10.1039/c5tc00842e
115. “Ultra-low voltage and ultra-low power consumption nonvolatile operation of
a three-terminal atomic switch”
Q. Wang, Y. Itoh, T. Tsuruoka, M. Aono, and T. Hasegawa
Advanced Materials 27 (2015) 6029–6033.
DOI: 10.1002/adma.201502678
116. “Nanosecond fast switching processes observed in gapless-type, Ta 2 O 5 -based
atomic switches”
T. Tsuruoka, T. Hasegawa, and M. Aono
Mater. Res. Soc. Symp. Proc. 1729 (2015).
DOI: 10.1557/opl.2015.93
117. “Interface structure in Cu/Ta 2 O 5 /Pt resistance switch: A first-principle study”
B. Xiao and S. Watanabe
ACS Applied Materials & Interfaces 7 (2015) 519–525.
DOI: 10.1021/am5066656
118. “Observation of a Ag protrusion on a Ag 2 S island using a scanning tunneling
microscope”
T. Ohno and T. Hasegawa
Results in Physics 5 (2015) 182–183.
DOI: 10.1016/j.rinp.2015.08.004
A List of Papers Related to the Atomic Switch
259