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Q. Wang, Y. Itoh, T. Hasegawa, T. Tsuruoka, S. Watanabe, S. Yamaguchi,
and M. Aono
Applied Physics Letters 102 (2013) 233508.
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88. “Quantized conductance and neuromorphic behavior of a gapless-type
Ag-Ta 2 O 5 atomic switch”
T. Tsuruoka, T. Hasegawa, K. Terabe, and M. Aono
Mater. Res. Soc. Symp. Proc. 1562 (2013).
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89. “Synaptic plasticity and memory functions achieved in WO 3-x -based nanoionics
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R. Yang, K. Terabe, Y. Yao, T. Tsuruoka, T. Hasegawa, J. K. Gimzewski,
and M. Aono
Nanotechnology 24 (2013) 384003.
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90. “Improved ON-state reliability of atom switch using alloy electrodes”
M. Tada, T. Sakamoto, N. Banno, K. Okamoto, N. Iguchi, H. Hada, and
M. Miyamura
IEEE Transactions on Electron Devices 60 (2013) 3534–3540.
DOI: 10.1109/TED.2013.2275188
91. “Bidirectional TaO-diode-selected, complementary atom switch (DCAS) for
area-efficient, nonvolatile crossbar switch block”
K. Okamoto, M. Tada, N. Banno, T. Sakamoto, M. Miyamura, N. Iguchi, and
H. Hada
2013 Symposium on VLSI Technology, T242–T243.
92. “Room temperature RedOx reaction by oxide ion migration at carbon/Gd-doped
CeO 2 hetero-interface probed by in-situ hard X-ray photoemission and soft
X-ray absorption spectroscopy”
T. Tsuchiya, S. Miyoshi, Y. Yamashita, H. Yoshikawa, K. Terabe,
K. Kobayashi, and S. Yamaguchi
Science and Technology of Advanced Materials 14 (2013) 045001.
DOI: 10.1088/1468-6996/14/4/045001
93. “Direct observation of redox state modulation at carbon/amorphous tantalum
oxide thin film hetero-interface probed by in-situ hard X-ray photoemission
spectroscopy”
T. Tsuchiya, S. Miyoshi, Y. Yamashita, H. Yoshikawa, K. Terabe,
K. Kobayashi, and S. Yamaguchi
Solid State Ionics 253 (2013) 110–118.
DOI: 10.1016/j_ssi_2013.09.015
94. “All-solid-state electric-double-layer transistor based on oxide ion migration in
Gd-doped CeO 2 on SrTiO 3 single crystal”
T. Tsuchiya, K. Terabe, and M. Aono
Applied Physics Letters 103 (2013) 073110.
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256
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