79. “First demonstration of logic mapping on nonvolatile programmable cell using
complementary atom switch”
M. Miyamura, M. Tada, T. Sakamoto, N. Banno, K. Okamoto, N. Iguchi, and
H. Hada
2012 International Electron Devices Meeting, 10.6.1–10.6.4.
DOI: 10.1109/IEDM.2012.6479020
80. “Improved reliability and switching performance of atom switch by using
ternary Cu-alloy and RuTa electrodes”
M. Tada, T. Sakamoto, N. Banno, K. Okamoto, M. Miyamura, N. Iguchi, and
H. Hada
2012 International Electron Devices Meeting, 29.8.1–29.8.4.
DOI: 10.1109/IEDM.2012.6479133
81. “Nonvolatile 32x32 crossbar atom switch block integrated on a 65-nm COMS
platform”
N. Banno, M. Tada, T. Sakamoto, K. Okamoto, M. Miyamura, N. Iguchi, and
H. Hada
2012 Symposium on VLSI Technology, 39–40.
DOI: 10.1109/VLSIT.2012.6242450
82. “Neuromorphic atomic switch networks”
A. V. Avizienis, H. O. Sillin, C. Martin-Olmos, H. H. Shieh, M. Aono, A. Z.
Stieg, and J. K. Gimzewski
PLOS ONE 7 (2012) e42772.
DOI: 10.1371/journal.pone.0042772
83. “Emergent criticality in complex tuning B-type atomic switch networks”
A. Z. Stieg, A. V. Avizienis, H. O. Sillin, C. Martin-Olmos, M. Aono, and
J. K. Gimzewski
Advanced Materials 24 (2012) 286–293.
DOI: 10.1002/adma.201103053
2013
84. “Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta 2 O 5
atomic switch”
T. Tsuruoka, T. Hasegawa, I. Valov, R. Waser, and M. Aono
AIP Advances 3 (2013) 032114.
DOI: 10.1063/1.4795140
85. “Volatile and nonvolatile selective switching of a photo-assisted atomic switch”
T. Hino, T. Hasegawa, H. Tanaka, T. Tsuruoka, K. Terabe, T. Ogawa, and
M. Aono
Nanotechnology 24 (2013) 384006.
DOI: 10.1088/0957-4484/24/38/384006
86. “Generic relevance of counter charges for cation-based nanoscale resistive
switching memories”
S. Tappertzhofen, I. Valov, T. Tsuruoka, T. Hasegawa, R. Waser, and
M. Aono
ACS Nano 7 (2013) 6396–6402.
DOI: 10.1021/nn4026614
A List of Papers Related to the Atomic Switch
255
complementary atom switch”
M. Miyamura, M. Tada, T. Sakamoto, N. Banno, K. Okamoto, N. Iguchi, and
H. Hada
2012 International Electron Devices Meeting, 10.6.1–10.6.4.
DOI: 10.1109/IEDM.2012.6479020
80. “Improved reliability and switching performance of atom switch by using
ternary Cu-alloy and RuTa electrodes”
M. Tada, T. Sakamoto, N. Banno, K. Okamoto, M. Miyamura, N. Iguchi, and
H. Hada
2012 International Electron Devices Meeting, 29.8.1–29.8.4.
DOI: 10.1109/IEDM.2012.6479133
81. “Nonvolatile 32x32 crossbar atom switch block integrated on a 65-nm COMS
platform”
N. Banno, M. Tada, T. Sakamoto, K. Okamoto, M. Miyamura, N. Iguchi, and
H. Hada
2012 Symposium on VLSI Technology, 39–40.
DOI: 10.1109/VLSIT.2012.6242450
82. “Neuromorphic atomic switch networks”
A. V. Avizienis, H. O. Sillin, C. Martin-Olmos, H. H. Shieh, M. Aono, A. Z.
Stieg, and J. K. Gimzewski
PLOS ONE 7 (2012) e42772.
DOI: 10.1371/journal.pone.0042772
83. “Emergent criticality in complex tuning B-type atomic switch networks”
A. Z. Stieg, A. V. Avizienis, H. O. Sillin, C. Martin-Olmos, M. Aono, and
J. K. Gimzewski
Advanced Materials 24 (2012) 286–293.
DOI: 10.1002/adma.201103053
2013
84. “Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta 2 O 5
atomic switch”
T. Tsuruoka, T. Hasegawa, I. Valov, R. Waser, and M. Aono
AIP Advances 3 (2013) 032114.
DOI: 10.1063/1.4795140
85. “Volatile and nonvolatile selective switching of a photo-assisted atomic switch”
T. Hino, T. Hasegawa, H. Tanaka, T. Tsuruoka, K. Terabe, T. Ogawa, and
M. Aono
Nanotechnology 24 (2013) 384006.
DOI: 10.1088/0957-4484/24/38/384006
86. “Generic relevance of counter charges for cation-based nanoscale resistive
switching memories”
S. Tappertzhofen, I. Valov, T. Tsuruoka, T. Hasegawa, R. Waser, and
M. Aono
ACS Nano 7 (2013) 6396–6402.
DOI: 10.1021/nn4026614
A List of Papers Related to the Atomic Switch
255