150
2 Holographic Microscopy of Phase and Diffuse Objects …
laser diode-heat remover, was chosen. The size of the mirror face is 150 × 259 μm
2 ,
of the diffusing scattered face is 250 × 500 μm
2 . Partly the choice depends on
the fact that in biology there are methods measuring amplitude of the microobject
surface deflection from equilibrium position. They are based on fixing a diminutive
mirror on the biological microobject under study. Methodically, it is adequate to shift
measurements of the laser diode mirror face during pumping current pulse percolation. It was shown in the experiments that this method has prospects in studying the
impact of the electric current, temperature and installation methods of semiconductor
structures on the service life of their work.
The research of the laser diodes also attracted attention because of studying the
waveguide characteristics of myelinated and non-myelinated nerve fibers. One of the
suppositions about information spreading contains the idea of its posteriori transmission by transformation of electrical energy into the light one, of the light energy
into the chemical one, of the chemical one into the electrical one and so on, like it
happens in the fourth generation computer, where the electrical signal is transformed
into the optical one with laser diodes in order to enhance the density significantly. It
is interesting to point out that in Ranvie constriction area there is a substance having
characteristics of semiconductor structures.
The results of author’s studies connected with development of the holographic
interference microscopy and the holographic microscope in the reflected light were
processed and further were used in a series of collaborate researches of mechanic
voltage and laser diodes deformations, which were conducted by the staff of the
Semiconductor Optics Laboratory in the Institute of Physics of the NAS of Belarus.
These results have an independent scientific and applied interest [55–69].
The holographic interferometry in studying semiconductor laser diodes. In this
case, the holographic method is adapted to deformation changes in the laser diodecold conduit system. The distinctive feature of this method is the possibility of
real-time study of deformation with high spatial shift resolution of the mirror as well
as of the diffusing scattered faces of a diode during pulse and continuous pumping
currents.
Heating and mechanical stress in injection heterolasers significantly affect their
power characteristics and service life [376, 377]. The analyses of heating processes
in pulse laser diodes were conducted in the works [378, 379] on the basis of resonator
deformation measurements with the Mickelson interferometer, semiconductor crystal
face served as one of the mirrors. The thermal expansion of the heat removal was
not considered. In this case, the holographic interference microscopy method in the
real scale was implemented for quantitative estimation of deformation occurring in
semiconductor laser diodes under continuous pumping current.
Injection lasers with two-side heterostructure in GaAS-Al x Ga 1−x As system were
under study. The samples were soldered with indium to a copper heat sink, one side
of which had a polished surface (Fig. 2.43a, b), and worked continuously under the
room temperature.
One part of the diodes was fixed from the side of the p-layer, the second one from
the side of the n-layer. The heterolaser-heat sink system was firmly fixed in the setup
and was insulted from the holder.
2 Holographic Microscopy of Phase and Diffuse Objects …
laser diode-heat remover, was chosen. The size of the mirror face is 150 × 259 μm
2 ,
of the diffusing scattered face is 250 × 500 μm
2 . Partly the choice depends on
the fact that in biology there are methods measuring amplitude of the microobject
surface deflection from equilibrium position. They are based on fixing a diminutive
mirror on the biological microobject under study. Methodically, it is adequate to shift
measurements of the laser diode mirror face during pumping current pulse percolation. It was shown in the experiments that this method has prospects in studying the
impact of the electric current, temperature and installation methods of semiconductor
structures on the service life of their work.
The research of the laser diodes also attracted attention because of studying the
waveguide characteristics of myelinated and non-myelinated nerve fibers. One of the
suppositions about information spreading contains the idea of its posteriori transmission by transformation of electrical energy into the light one, of the light energy
into the chemical one, of the chemical one into the electrical one and so on, like it
happens in the fourth generation computer, where the electrical signal is transformed
into the optical one with laser diodes in order to enhance the density significantly. It
is interesting to point out that in Ranvie constriction area there is a substance having
characteristics of semiconductor structures.
The results of author’s studies connected with development of the holographic
interference microscopy and the holographic microscope in the reflected light were
processed and further were used in a series of collaborate researches of mechanic
voltage and laser diodes deformations, which were conducted by the staff of the
Semiconductor Optics Laboratory in the Institute of Physics of the NAS of Belarus.
These results have an independent scientific and applied interest [55–69].
The holographic interferometry in studying semiconductor laser diodes. In this
case, the holographic method is adapted to deformation changes in the laser diodecold conduit system. The distinctive feature of this method is the possibility of
real-time study of deformation with high spatial shift resolution of the mirror as well
as of the diffusing scattered faces of a diode during pulse and continuous pumping
currents.
Heating and mechanical stress in injection heterolasers significantly affect their
power characteristics and service life [376, 377]. The analyses of heating processes
in pulse laser diodes were conducted in the works [378, 379] on the basis of resonator
deformation measurements with the Mickelson interferometer, semiconductor crystal
face served as one of the mirrors. The thermal expansion of the heat removal was
not considered. In this case, the holographic interference microscopy method in the
real scale was implemented for quantitative estimation of deformation occurring in
semiconductor laser diodes under continuous pumping current.
Injection lasers with two-side heterostructure in GaAS-Al x Ga 1−x As system were
under study. The samples were soldered with indium to a copper heat sink, one side
of which had a polished surface (Fig. 2.43a, b), and worked continuously under the
room temperature.
One part of the diodes was fixed from the side of the p-layer, the second one from
the side of the n-layer. The heterolaser-heat sink system was firmly fixed in the setup
and was insulted from the holder.