References
181
78. A. Chiari, M. Colocci, F. Fermi, Y. Li, R. Querzoli, A. Vinattieri, W. Zhuang, Temperature
dependence of the photoluminescence in GaAs/GaAlAs multiple quantum well structure.
Phys. Status Solidi B 147, 421 (1988)
79. J. Hader, J.V. Moloney, S.W. Koch, Supression of carrier recombination in semiconductor
lasers by phase-space filling. Appl. Phys. Lett. 87, 201112 (2005)
80. D. Christiansen, M. Selig, G. Berghäuser, R. Schmidt, I. Niehues, R. Schneider, A. Arora,
S.M. de Vasconcellos, R. Bratschitsch, E. Malic, A. Knorr, Phonon sidebands in monolayer
transition metal dichalcogenides. Phys. Rev. Lett. 119, 187402 (2017)
81. M. Selig, G. Berghäuser, A. Raja, P. Nagler, C. Schüller, T.F. Heinz, T. Korn, A. Chernikov,
E. Malic, A. Knorr, Excitonic linewidth and coherence lifetime in monolayer transition metal
dichalcogenides. Nat. Commun. 7, 13279 (2016)
82. S. Brem, A. Ekman, D. Christiansen, F. Katsch, M. Selig, C. Robert, X. Marie, B. Urbaszek,
A. Knorr, E. Malic, Phonon-assisted photoluminescence from indirect excitons in monolayers
of transition-metal dichalcogenides. Nano Lett. 20(4), 2849–2856 (2020)
83. C.M. Chow, H. Yu, A.M. Jones, J.R. Schaibley, M. Koehler, D.G. Mandrus, R. Merlin, W.
Yao, X. Xu, Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2. npj 2D Mater
Appl. 1, 33 (2017)
84. A. Steinhoff, M. Rösner, F. Jahnke, T.O. Wehling, C. Gies, Influence of excited carriers on
the optical and electronic properties of MoS 2 . Nano Lett. 14(7), 3743–3748 (2014)
85. K.P. O’Donnell, X. Chen, Temperature dependence of semiconductor band gaps. Appl. Phys.
Lett. 58, 2924–2926 (1991)
86. Y.P. Varshni, Temperature dependence of the energy gap in semiconductors. Physica 34,
149–154 (1967)
87. K.F. Mak, C. Lee, J. Hone, J. Shan, T.F. Heinz, Atomically thin MoS 2 : a new direct-gap
semiconductor. Phys. Rev. Lett. 105, 136805 (2010)
88. A.K. Geim, I.V. Grigorieva, Van der Waals heterostructures. Nature 499, 419 (2013)
89. K.S. Novoselov, A. Mishchenko, A. Carvalho, A.H. Castro Neto, 2D materials and van der
Waals heterostructures. Science 353, aac9439 (2016)
90. U. Wurstbauer, B. Miller, E. Parzinger, A.W. Holleitner, Light matter interaction in transition
metal dichalcogenides and their heterostructures. J. Phys. D: Appl. Phys. 50, 173001 (2017)
91. J.R. Schaibley, H. Yu, G. Clark, P. Rivera, J.S. Ross, K.L. Seyler, W. Yao, X. Xu, Valleytronics
in 2D materials. Nat. Rev. Mater. 1, 16055 (2016)
92. G. Wang, A. Chernikov, M.M. Glazov, T.F. Heinz, X. Marie, T. Amand, B. Urbaszek, Colloquium: excitons in atomically thin transition metal dichalcogenides. Rev. Mod. Phys. 90,
21001 (2018)
93. K.F. Mak, D. Xiao, J. Shan, Light-valley interactions in 2D semiconductors. Nat. Photon. 12,
451–460 (2018)
94. K.K. Kam, B.A. Parkinson, Detailed photocurrent spectroscopy of the semiconducting group
VIB transition metal dichalcogenides. J. Phys. Chem. 86, 463–467 (1982)
95. F.H.L. Koppens, T. Mueller, P. Avouris, A.C. Ferrari, M.S. Vitiello, M. Polini, Photodetectors
based on graphene, other two-dimensional materials and hybrid systems. Nat. Nanotechnol.
9, 780–793 (2014)
96. K.F. Mak, J. Shan, Photonics and optoelectronics of 2D semiconductor transition metal
dichalcogenides. Nat. Photon. 10, 216–226 (2016)
97. T. Chen, Y. Sheng, Y. Zhou, R.-J. Chang, X. Wang, H. Huang, Q. Zhang, L. Hou, J.H. Warner,
High Photoresponsivity in Ultrathin 2D Lateral Graphene:WS 2 : Graphene Photodetectors
Using direct CVD growth. ACS Appl. Mater. Interfaces 11, 6421–6430 (2019)
98. G. Thiele, S. Lippert, F. Fahrnbauer, P. Bron, O. Oeckler, A. Rahimi-Iman, M. Koch, B.
Roling, S. Dehnen, K 2 Hg 2 Se 3 : large-scalesynthesis of a photoconductor material prototype
with a columnar polyanionic substructure. Chem. Mater. 27, 4114–4118 (2015)
99. B. Wagner, N. Dehnhardt, M. Schmid, B.P. Klein, L. Ruppenthal, P. Müller, M. Zugermeier,
J.M. Gottfried, S. Lippert, M.-U. Halbich, A. Rahimi-Iman, J. Heine, Color change effect
in an organic-inorganic hybrid material based on a porphyrin diacid. J. Phys. Chem. C 120,
28363–28373 (2016)
181
78. A. Chiari, M. Colocci, F. Fermi, Y. Li, R. Querzoli, A. Vinattieri, W. Zhuang, Temperature
dependence of the photoluminescence in GaAs/GaAlAs multiple quantum well structure.
Phys. Status Solidi B 147, 421 (1988)
79. J. Hader, J.V. Moloney, S.W. Koch, Supression of carrier recombination in semiconductor
lasers by phase-space filling. Appl. Phys. Lett. 87, 201112 (2005)
80. D. Christiansen, M. Selig, G. Berghäuser, R. Schmidt, I. Niehues, R. Schneider, A. Arora,
S.M. de Vasconcellos, R. Bratschitsch, E. Malic, A. Knorr, Phonon sidebands in monolayer
transition metal dichalcogenides. Phys. Rev. Lett. 119, 187402 (2017)
81. M. Selig, G. Berghäuser, A. Raja, P. Nagler, C. Schüller, T.F. Heinz, T. Korn, A. Chernikov,
E. Malic, A. Knorr, Excitonic linewidth and coherence lifetime in monolayer transition metal
dichalcogenides. Nat. Commun. 7, 13279 (2016)
82. S. Brem, A. Ekman, D. Christiansen, F. Katsch, M. Selig, C. Robert, X. Marie, B. Urbaszek,
A. Knorr, E. Malic, Phonon-assisted photoluminescence from indirect excitons in monolayers
of transition-metal dichalcogenides. Nano Lett. 20(4), 2849–2856 (2020)
83. C.M. Chow, H. Yu, A.M. Jones, J.R. Schaibley, M. Koehler, D.G. Mandrus, R. Merlin, W.
Yao, X. Xu, Phonon-assisted oscillatory exciton dynamics in monolayer MoSe2. npj 2D Mater
Appl. 1, 33 (2017)
84. A. Steinhoff, M. Rösner, F. Jahnke, T.O. Wehling, C. Gies, Influence of excited carriers on
the optical and electronic properties of MoS 2 . Nano Lett. 14(7), 3743–3748 (2014)
85. K.P. O’Donnell, X. Chen, Temperature dependence of semiconductor band gaps. Appl. Phys.
Lett. 58, 2924–2926 (1991)
86. Y.P. Varshni, Temperature dependence of the energy gap in semiconductors. Physica 34,
149–154 (1967)
87. K.F. Mak, C. Lee, J. Hone, J. Shan, T.F. Heinz, Atomically thin MoS 2 : a new direct-gap
semiconductor. Phys. Rev. Lett. 105, 136805 (2010)
88. A.K. Geim, I.V. Grigorieva, Van der Waals heterostructures. Nature 499, 419 (2013)
89. K.S. Novoselov, A. Mishchenko, A. Carvalho, A.H. Castro Neto, 2D materials and van der
Waals heterostructures. Science 353, aac9439 (2016)
90. U. Wurstbauer, B. Miller, E. Parzinger, A.W. Holleitner, Light matter interaction in transition
metal dichalcogenides and their heterostructures. J. Phys. D: Appl. Phys. 50, 173001 (2017)
91. J.R. Schaibley, H. Yu, G. Clark, P. Rivera, J.S. Ross, K.L. Seyler, W. Yao, X. Xu, Valleytronics
in 2D materials. Nat. Rev. Mater. 1, 16055 (2016)
92. G. Wang, A. Chernikov, M.M. Glazov, T.F. Heinz, X. Marie, T. Amand, B. Urbaszek, Colloquium: excitons in atomically thin transition metal dichalcogenides. Rev. Mod. Phys. 90,
21001 (2018)
93. K.F. Mak, D. Xiao, J. Shan, Light-valley interactions in 2D semiconductors. Nat. Photon. 12,
451–460 (2018)
94. K.K. Kam, B.A. Parkinson, Detailed photocurrent spectroscopy of the semiconducting group
VIB transition metal dichalcogenides. J. Phys. Chem. 86, 463–467 (1982)
95. F.H.L. Koppens, T. Mueller, P. Avouris, A.C. Ferrari, M.S. Vitiello, M. Polini, Photodetectors
based on graphene, other two-dimensional materials and hybrid systems. Nat. Nanotechnol.
9, 780–793 (2014)
96. K.F. Mak, J. Shan, Photonics and optoelectronics of 2D semiconductor transition metal
dichalcogenides. Nat. Photon. 10, 216–226 (2016)
97. T. Chen, Y. Sheng, Y. Zhou, R.-J. Chang, X. Wang, H. Huang, Q. Zhang, L. Hou, J.H. Warner,
High Photoresponsivity in Ultrathin 2D Lateral Graphene:WS 2 : Graphene Photodetectors
Using direct CVD growth. ACS Appl. Mater. Interfaces 11, 6421–6430 (2019)
98. G. Thiele, S. Lippert, F. Fahrnbauer, P. Bron, O. Oeckler, A. Rahimi-Iman, M. Koch, B.
Roling, S. Dehnen, K 2 Hg 2 Se 3 : large-scalesynthesis of a photoconductor material prototype
with a columnar polyanionic substructure. Chem. Mater. 27, 4114–4118 (2015)
99. B. Wagner, N. Dehnhardt, M. Schmid, B.P. Klein, L. Ruppenthal, P. Müller, M. Zugermeier,
J.M. Gottfried, S. Lippert, M.-U. Halbich, A. Rahimi-Iman, J. Heine, Color change effect
in an organic-inorganic hybrid material based on a porphyrin diacid. J. Phys. Chem. C 120,
28363–28373 (2016)