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C.K. Lin, Y.C. Liang, C. Chen, T.C. Yeh, L.C. Lin, D.C.H. Yu, Comparison of the electromigration behaviors between micro-bumps and C4 solder bumps, in Proceedings of Electronic
Components and Technology Conference (2011), pp. 706–710
52. H. You, Y. Lee, S. Lee, J. Kang, Reliability of 20 μm micro bump interconnects. Technology
c, 608–611 (2011)
53. S.Y. Huang, C.J. Zhan, Y.W. Huang, Y.M. Lin, C.W. Fan, S.C. Chung, K.S. Kao, J.Y. Chang,
M.L. Wu, T.F. Yang, J.H. Lau, T.H. Chen, Effects of UBM structure/material on the reliability
performance of 3D chip stacking with 30 μm-pitch solder micro bump interconnections, in
Proceedings of Electronic Components and Technology Conference (2012), pp. 1287–1292
54. N. Tanaka, T. Sato, Y. Yamaji, T. Morifuji, M. Umemoto, K. Takahashi, M. Effects, Mechanical
effects of copper through-vias in a 3D die-stacked module, in Proceedings of 52nd Electronic
Components and Technology Conference, 2002, no. 2 (2002), pp. 473–479
55. J. Zhang, M.O. Bloomfield, J.Q. Lu, R.J. Gutmann, T.S. Cale, Modeling thermal stresses in
3-D IC interwafer interconnects. IEEE Trans. Semicond. Manuf. 19(4), 437–448 (2006)
56. K.H. Lu, S.K. Ryu, Q. Zhao, X. Zhang, J. Im, R. Huang, P.S. Ho, Thermal stress induced delamination of through silicon vias in 3-D interconnects, in Proceedings of Electronic Components
and Technology Conference (2010), pp. 40–45
57. J. Pak, M. Pathak, S.K. Lim, D.Z. Pan, Modeling of electromigration in through-silicon-via
based 3D IC, in Proceedings of Electronic Components and Technology Conference, vol. 0, no.
1, (2011), pp. 1420–1427
58. Z. Chen, Z. Lv, X.F. Wang, Y. Liu, S. Liu, Modeling of electromigration of the through
silicon via interconnects, in Proceedings of 2010 11th International Conference on Electronic
Packaging Technology and High Density Packaging, ICEPT-HDP 2010 (2010), pp. 1221–1225
59. Y.C. Tan, C.M. Tan, X.W. Zhang, T.C. Chai, D.Q. Yu, Electromigration performance of Through
Silicon Via (TSV)—A modeling approach. Microelectron. Reliab. 50(9–11), 1336–1340 (2010)
60. T. Frank, S. Moreau, C. Chappaz, L. Arnaud, P. Leduc, A. Thuaire, L. Anghel, Electromigration behavior of 3D-IC TSV interconnects, in Proceedings of Electronic Components and
Technology Conference, vol. 3, no. 1 (2012), pp. 326–330
61. T. Frank, S. Moreau, C. Chappaz, P. Leduc, L. Arnaud, A. Thuaire, E. Chery, F. Lorut, L.
Anghel, G. Poupon, Reliability of TSV interconnects: electromigration, thermal cycling, and
impact on above metal level dielectric. Microelectron. Reliab. 53(1), 17–29 (2013)
62. S. Moreau, D. Bouchu, Reliability of Dual Damascene TSV for high density integration: the
electromigration issue. IEEE Int. Reliab. Phys. Symp. Proc. 33, 1–5 (2013)
63. H.J. Choi, S.M. Choi, M.S. Yeo, S.D. Cho, D.C. Baek, J. Park, An experimental study on the
TSV reliability: electromigration (EM) and time dependant dielectric breakdown (TDDB), in
2012 IEEE International Interconnect Technology Conference, IITC 2012 (2012), pp. 4–6
64. Y. Liu, M. Li, D.W. Kim, S. Gu, K.N. Tu, Synergistic effect of electromigration and Joule
heating on system level weak-link failure in 2.5D integrated circuits. J. Appl. Phys. 118(13),
135304 (2015)
65. K. Chen, K. Tu, G. Editors, Materials challenges in three-dimensional integrated circuits, in
MRS Bulletin, vol. 40, (2015), pp. 219–222
66. A.T. Huang, A.M. Gusak, K.N. Tu, Y.S. Lai, Thermomigration in SnPb composite flip chip
solder joints. Appl. Phys. Lett. 88(14), 1–4 (2006)
67. A.T. Huang, K.N. Tu, Y.S. Lai, Effect of the combination of electromigration and thermomigration on phase migration and partial melting in flip chip composite SnPb solder joints. J.
Appl. Phys. 100(3), 0–4 (2006)
68. D. Yang, Y.C. Chan, B.Y. Wu, M. Pecht, Electromigration and thermomigration behavior of flip
chip solder joints in high current density packages. J. Mater. Res. 23(09), 2333–2339 (2011)
69. F.Y. Ouyang, K.N. Tu, Y.S. Lai, A.M. Gusak, Effect of entropy production on microstructure
change in eutectic SnPb flip chip solder joints by thermomigration. Appl. Phys. Lett. 89(22),
26–29 (2006)
70. F.Y. Ouyang C.L. Kao, In situ observation of thermomigration of Sn atoms to the hot end of
96.5Sn–3Ag–0.5Cu flip chip solder joints. J. Appl. Phys. 110(12), 0–9 (2011)
Y. Wang et al.
51. C.C. Wei, C.H. Yu, C.H. Tung, R.Y. Huang, C.C. Hsieh, C.C. Chiu, H.Y. Hsiao, Y.W. Chang,
C.K. Lin, Y.C. Liang, C. Chen, T.C. Yeh, L.C. Lin, D.C.H. Yu, Comparison of the electromigration behaviors between micro-bumps and C4 solder bumps, in Proceedings of Electronic
Components and Technology Conference (2011), pp. 706–710
52. H. You, Y. Lee, S. Lee, J. Kang, Reliability of 20 μm micro bump interconnects. Technology
c, 608–611 (2011)
53. S.Y. Huang, C.J. Zhan, Y.W. Huang, Y.M. Lin, C.W. Fan, S.C. Chung, K.S. Kao, J.Y. Chang,
M.L. Wu, T.F. Yang, J.H. Lau, T.H. Chen, Effects of UBM structure/material on the reliability
performance of 3D chip stacking with 30 μm-pitch solder micro bump interconnections, in
Proceedings of Electronic Components and Technology Conference (2012), pp. 1287–1292
54. N. Tanaka, T. Sato, Y. Yamaji, T. Morifuji, M. Umemoto, K. Takahashi, M. Effects, Mechanical
effects of copper through-vias in a 3D die-stacked module, in Proceedings of 52nd Electronic
Components and Technology Conference, 2002, no. 2 (2002), pp. 473–479
55. J. Zhang, M.O. Bloomfield, J.Q. Lu, R.J. Gutmann, T.S. Cale, Modeling thermal stresses in
3-D IC interwafer interconnects. IEEE Trans. Semicond. Manuf. 19(4), 437–448 (2006)
56. K.H. Lu, S.K. Ryu, Q. Zhao, X. Zhang, J. Im, R. Huang, P.S. Ho, Thermal stress induced delamination of through silicon vias in 3-D interconnects, in Proceedings of Electronic Components
and Technology Conference (2010), pp. 40–45
57. J. Pak, M. Pathak, S.K. Lim, D.Z. Pan, Modeling of electromigration in through-silicon-via
based 3D IC, in Proceedings of Electronic Components and Technology Conference, vol. 0, no.
1, (2011), pp. 1420–1427
58. Z. Chen, Z. Lv, X.F. Wang, Y. Liu, S. Liu, Modeling of electromigration of the through
silicon via interconnects, in Proceedings of 2010 11th International Conference on Electronic
Packaging Technology and High Density Packaging, ICEPT-HDP 2010 (2010), pp. 1221–1225
59. Y.C. Tan, C.M. Tan, X.W. Zhang, T.C. Chai, D.Q. Yu, Electromigration performance of Through
Silicon Via (TSV)—A modeling approach. Microelectron. Reliab. 50(9–11), 1336–1340 (2010)
60. T. Frank, S. Moreau, C. Chappaz, L. Arnaud, P. Leduc, A. Thuaire, L. Anghel, Electromigration behavior of 3D-IC TSV interconnects, in Proceedings of Electronic Components and
Technology Conference, vol. 3, no. 1 (2012), pp. 326–330
61. T. Frank, S. Moreau, C. Chappaz, P. Leduc, L. Arnaud, A. Thuaire, E. Chery, F. Lorut, L.
Anghel, G. Poupon, Reliability of TSV interconnects: electromigration, thermal cycling, and
impact on above metal level dielectric. Microelectron. Reliab. 53(1), 17–29 (2013)
62. S. Moreau, D. Bouchu, Reliability of Dual Damascene TSV for high density integration: the
electromigration issue. IEEE Int. Reliab. Phys. Symp. Proc. 33, 1–5 (2013)
63. H.J. Choi, S.M. Choi, M.S. Yeo, S.D. Cho, D.C. Baek, J. Park, An experimental study on the
TSV reliability: electromigration (EM) and time dependant dielectric breakdown (TDDB), in
2012 IEEE International Interconnect Technology Conference, IITC 2012 (2012), pp. 4–6
64. Y. Liu, M. Li, D.W. Kim, S. Gu, K.N. Tu, Synergistic effect of electromigration and Joule
heating on system level weak-link failure in 2.5D integrated circuits. J. Appl. Phys. 118(13),
135304 (2015)
65. K. Chen, K. Tu, G. Editors, Materials challenges in three-dimensional integrated circuits, in
MRS Bulletin, vol. 40, (2015), pp. 219–222
66. A.T. Huang, A.M. Gusak, K.N. Tu, Y.S. Lai, Thermomigration in SnPb composite flip chip
solder joints. Appl. Phys. Lett. 88(14), 1–4 (2006)
67. A.T. Huang, K.N. Tu, Y.S. Lai, Effect of the combination of electromigration and thermomigration on phase migration and partial melting in flip chip composite SnPb solder joints. J.
Appl. Phys. 100(3), 0–4 (2006)
68. D. Yang, Y.C. Chan, B.Y. Wu, M. Pecht, Electromigration and thermomigration behavior of flip
chip solder joints in high current density packages. J. Mater. Res. 23(09), 2333–2339 (2011)
69. F.Y. Ouyang, K.N. Tu, Y.S. Lai, A.M. Gusak, Effect of entropy production on microstructure
change in eutectic SnPb flip chip solder joints by thermomigration. Appl. Phys. Lett. 89(22),
26–29 (2006)
70. F.Y. Ouyang C.L. Kao, In situ observation of thermomigration of Sn atoms to the hot end of
96.5Sn–3Ag–0.5Cu flip chip solder joints. J. Appl. Phys. 110(12), 0–9 (2011)