17 Interconnect Quality and Reliability of 3D Packaging
571
30. K. Sakuma, K. Tunga, B. Webb, An enhanced thermo-compression bonding process to address
warpage in 3D integration of large die on organic substrates, in Proceedings of Electronic
Components and Technology Conference (2015), pp. 318–324
31. L. Li, P. Su, J. Xue, M. Brillhart, J. Lau, P.J. Tzeng, C.K. Lee, C.J. Zhan, M.J. Dai, H.C.
Chien, S.T. Wu, Addressing bandwidth challenges in next generation high performance network
systems with 3D IC integration, in Proceedings of Electronic Components and Technology
Conference (2012), pp. 1040–1046
32. C.C. Lee, P.J. Wang, J.S. Kim, Are intermetallics in solder joints really brittle? Proceedings of
Electronic Components and Technology Conference (2007), pp. 648–652
33. P.F. Yang, Y.S. Lai, S.R. Jian, J. Chen, R.S. Chen, Nanoindentation identifications of mechanical properties of Cu 6 Sn 5 , Cu 3 Sn, and Ni 3 Sn 4 intermetallic compounds derived by diffusion
couples. Mater. Sci. Eng. A 485(1–2), 305–310 (2008)
34. L. Jiang, N. Chawla, Mechanical properties of Cu 6 Sn 5 intermetallic by micropillar compression
testing. Scr. Mater. 63(5), 480–483 (2010)
35. H.B. Huntington, A.R. Grone, Current-induced marker motion in gold wires. J. Phys. Chem.
Solids 20(1), 76–87 (1961)
36. I.A. Blech, Electromigration in thin aluminum films on titanium nitride. J. Appl. Phys. 47(4),
1203–1208 (1976)
37. C.K. Hu, K.P. Rodbell, T.D. Sullivan, K.Y. Lee, D.P. Bouldin, Electromigration and stressinduced voiding in fine Al and Al-alloy thin-film lines. IBM J. Res. Dev. 39(4), 465–497
(1995)
38. C.K. Hu, M.B. Small, P.S. Ho, Electromigration in Al(Cu) two-level structures: Effect of Cu
and kinetics of damage formation. J. Appl. Phys. 74(2), 969–978 (1993)
39. C.K. Hu, P.S. Ho, M.B. Small, Electromigration in two-level interconnect structures with Al
alloy lines and W studs. J. Appl. Phys. 72(1), 291–293 (1992)
40. E.T. Ogawa, K.D. Lee, V.A. Blaschke, P.S. Ho, Electromigration reliability issues in dualdamascene Cu interconnections. IEEE Trans. Reliab. 51(4), 403–419 (2002)
41. Y. Morand, Copper metallization for advanced IC: requirements and technological solutions.
Microelectron. Eng. 50(1–4), 391–401 (2000)
42. H. Helneder, H. Korner, A. Mitchell, M. Schwerd, U. Seidel, Comparison of copper damascene
and aluminum RIE metallization in BICMOS technology, vol. 55 (2001), pp. 257–268
43. C.K. Hu, R. Rosenberg, H. Rathore, D. Nguyen, B. Agarwala, Scaling effect in electromigration
of on-chip Cu wiring, in Interconnect Technology 1999. IEEE International Conference (1999),
pp. 267–269
44. E.C.C. Yeh, W.J. Choi, K.N. Tu, P. Elenius, H. Balkan, Current-crowding-induced electromigration failure in flip chip solder joints. Appl. Phys. Lett. 80(4), 580–582 (2002)
45. L. Zhang, S. Ou, J. Huang, K.N. Tu, S. Gee, L. Nguyen, Effect of current crowding on void
propagation at the interface between intermetallic compound and solder in flip chip solder
joints. Appl. Phys. Lett. 88(1) (2006)
46. K.N. Tu, C.C. Yeh, C.Y. Liu, C. Chen, Effect of current crowding on vacancy diffusion and
void formation in electromigration. Appl. Phys. Lett. 76(8), 988 (2000)
47. F.Y. Ouyang, H. Hsu, Y.P. Su, T.C. Chang, Electromigration induced failure on lead-free micro
bumps in three-dimensional integrated circuits packaging. J. Appl. Phys. 112(2) (2012)
48. R. Labie, P. Limaye, K. Lee, C. Berry, E. Beyne, I. De Wolf, Reliability testing of Cu–Sn
intermetallic micro-bump interconnections for 3D-device stacking, in 3rd Electronics SystemIntegration Technology Conference, ESTC (2010), pp. 1–5
49. R. Labie, W. Ruythooren, K. Baert, E. Beyne, B. Swinnen, Resistance to electromigration
of purely intermetallic micro-bump interconnections for 3D-device stacking, in 2008 IEEE
International Interconnect Technology Conference, IITC, (2008), pp. 19–21
50. Y.M. Lin, C.-J. Zhan, J.-Y. Juang, J.H. Lau, T.-H. Chen, R. Lo, M. Kao, T. Tian, K.-N. Tu,
Electromigration in Ni/Sn intermetallic micro bump joint for 3D IC chip stacking, in 2011
IEEE 61st Electronic Components and Technology Conference (2011), pp. 351–357
571
30. K. Sakuma, K. Tunga, B. Webb, An enhanced thermo-compression bonding process to address
warpage in 3D integration of large die on organic substrates, in Proceedings of Electronic
Components and Technology Conference (2015), pp. 318–324
31. L. Li, P. Su, J. Xue, M. Brillhart, J. Lau, P.J. Tzeng, C.K. Lee, C.J. Zhan, M.J. Dai, H.C.
Chien, S.T. Wu, Addressing bandwidth challenges in next generation high performance network
systems with 3D IC integration, in Proceedings of Electronic Components and Technology
Conference (2012), pp. 1040–1046
32. C.C. Lee, P.J. Wang, J.S. Kim, Are intermetallics in solder joints really brittle? Proceedings of
Electronic Components and Technology Conference (2007), pp. 648–652
33. P.F. Yang, Y.S. Lai, S.R. Jian, J. Chen, R.S. Chen, Nanoindentation identifications of mechanical properties of Cu 6 Sn 5 , Cu 3 Sn, and Ni 3 Sn 4 intermetallic compounds derived by diffusion
couples. Mater. Sci. Eng. A 485(1–2), 305–310 (2008)
34. L. Jiang, N. Chawla, Mechanical properties of Cu 6 Sn 5 intermetallic by micropillar compression
testing. Scr. Mater. 63(5), 480–483 (2010)
35. H.B. Huntington, A.R. Grone, Current-induced marker motion in gold wires. J. Phys. Chem.
Solids 20(1), 76–87 (1961)
36. I.A. Blech, Electromigration in thin aluminum films on titanium nitride. J. Appl. Phys. 47(4),
1203–1208 (1976)
37. C.K. Hu, K.P. Rodbell, T.D. Sullivan, K.Y. Lee, D.P. Bouldin, Electromigration and stressinduced voiding in fine Al and Al-alloy thin-film lines. IBM J. Res. Dev. 39(4), 465–497
(1995)
38. C.K. Hu, M.B. Small, P.S. Ho, Electromigration in Al(Cu) two-level structures: Effect of Cu
and kinetics of damage formation. J. Appl. Phys. 74(2), 969–978 (1993)
39. C.K. Hu, P.S. Ho, M.B. Small, Electromigration in two-level interconnect structures with Al
alloy lines and W studs. J. Appl. Phys. 72(1), 291–293 (1992)
40. E.T. Ogawa, K.D. Lee, V.A. Blaschke, P.S. Ho, Electromigration reliability issues in dualdamascene Cu interconnections. IEEE Trans. Reliab. 51(4), 403–419 (2002)
41. Y. Morand, Copper metallization for advanced IC: requirements and technological solutions.
Microelectron. Eng. 50(1–4), 391–401 (2000)
42. H. Helneder, H. Korner, A. Mitchell, M. Schwerd, U. Seidel, Comparison of copper damascene
and aluminum RIE metallization in BICMOS technology, vol. 55 (2001), pp. 257–268
43. C.K. Hu, R. Rosenberg, H. Rathore, D. Nguyen, B. Agarwala, Scaling effect in electromigration
of on-chip Cu wiring, in Interconnect Technology 1999. IEEE International Conference (1999),
pp. 267–269
44. E.C.C. Yeh, W.J. Choi, K.N. Tu, P. Elenius, H. Balkan, Current-crowding-induced electromigration failure in flip chip solder joints. Appl. Phys. Lett. 80(4), 580–582 (2002)
45. L. Zhang, S. Ou, J. Huang, K.N. Tu, S. Gee, L. Nguyen, Effect of current crowding on void
propagation at the interface between intermetallic compound and solder in flip chip solder
joints. Appl. Phys. Lett. 88(1) (2006)
46. K.N. Tu, C.C. Yeh, C.Y. Liu, C. Chen, Effect of current crowding on vacancy diffusion and
void formation in electromigration. Appl. Phys. Lett. 76(8), 988 (2000)
47. F.Y. Ouyang, H. Hsu, Y.P. Su, T.C. Chang, Electromigration induced failure on lead-free micro
bumps in three-dimensional integrated circuits packaging. J. Appl. Phys. 112(2) (2012)
48. R. Labie, P. Limaye, K. Lee, C. Berry, E. Beyne, I. De Wolf, Reliability testing of Cu–Sn
intermetallic micro-bump interconnections for 3D-device stacking, in 3rd Electronics SystemIntegration Technology Conference, ESTC (2010), pp. 1–5
49. R. Labie, W. Ruythooren, K. Baert, E. Beyne, B. Swinnen, Resistance to electromigration
of purely intermetallic micro-bump interconnections for 3D-device stacking, in 2008 IEEE
International Interconnect Technology Conference, IITC, (2008), pp. 19–21
50. Y.M. Lin, C.-J. Zhan, J.-Y. Juang, J.H. Lau, T.-H. Chen, R. Lo, M. Kao, T. Tian, K.-N. Tu,
Electromigration in Ni/Sn intermetallic micro bump joint for 3D IC chip stacking, in 2011
IEEE 61st Electronic Components and Technology Conference (2011), pp. 351–357