366
P. Liu
The key factors that modulate the TSV failure modes are not very clear based on the
limited reports and more studies are needed. It is believed that the key parameters
that modulate the EM of Cu damascene interconnects, including current crowding,
Cu/passivation interface, Cu reservoir, and thermal mechanical stress gradient will
be also the key factors for TSV related EM failure.
Acknowledgements The editors would like to thank Kwang-Lung Lin from National Cheng Kung
University in Taiwan for his critical review of this Chapter.
References
1. S.Q. Gu, MRS Bull. 40, 233 (2015)
2. X. Zhang, J.K. Lin, S. Wickramanayaka, S. Zhang, R. Weerasekera, R. Dutta, K.F. Chang, K.J.
Chui, H.Y. Li, D.S.W. Ho, L. Ding, G. Katti, S. Bhattacharya, D.L. Kwong, Appl. Phys. Rev.
2, 021308 (2005)
3. K.N. Tu, H.Y. Hsiao, C. Chen, Microelectr. Reliab. 53, 2 (2013)
4. K.N. Tu, T. Tian, Sci. China 56, 1740 (2013)
5. K.N. Chen, T.N. Tu, MRS Bull. 40, 219 (2015)
6. L. Xu, J.K. Han, J.J. Liang, K.N. Tu, Y.S. Lai, Appl. Phys. Lett. 92, 262104 (2006)
7. P.L. Liu, F.Y. Ouyang, S. Ou, Z. Fu, G. Deepak, ASME InterPACK Conference, vol. 1, p. 703
(2009)
8. C. Chen, H.M. Tong, K.N. Tu, Annu. Rev. Mater. Res. 40, 531 (2010)
9. M.H. Lu, D.Y. Shih, P. Lauro, C. Goldsmith, D.W. Henderson, Appl. Phys. Lett. 92, 211909
(2008)
10. Y. Wang, K.H. Lu, V. Gupta, L. Stiborek, D. Shirley, S.H. Chae, J. Im, P.S. Ho, J. Mater. Res.
27, 1131 (2012)
11. K.N. Tu, J. Appl. Phys. 94, 5451 (2003)
12. S.K. Seo, S.K. Kang, D.Y. Shih, H.M. Lee, J. Metals 61, 22 (2010)
13. M. Lu, D.Y. Shih, S.K. Kang, C. Goldsmith, P. Flaitz, J. Appl. Phys. 106, 053509 (2009)
14. I.A. Blech, J. Appl. Phys. 47, 1203 (1976)
15. M.H. Lu, D.Y. Shih, P. Lauro, C. Goldsmith, Appl. Phys. Lett. 94, 011912 (2009)
16. Y.C. Hsu, C.K. Chou, P.C. Liu, C. Chen, D.J. Yao, T. Chou, K.N. Tu, J. Appl. Phys. 98, 033523
(2005)
17. M.S. Yoon, M.K. Ko, B.N. Kim, B.J. Kim, Y.B. Park, Y.C. Joo, J. Appl. Phys. 103, 073701
(2008)
18. J.R. Black, in Processing 6th Annual International Reliability Physics Symposium, p. 148
(1967)
19. T.C. Huang, T.L. Yang, J.H. Ke, C.H. Hsueh, C.R. Kao, Scripta Mater. 80, 37 (2014)
20. Y. Wang, P.S. Ho, Appl. Phys. Lett. 103, 121909 (2013)
21. P.L. Liu, O. Alan, D. Goyal, in Electronic Components and Technology Conference (ECTC),
p. 95 (2015)
22. A.U. Telang, T.R. Bieler, Scripta Matter. 52, 1027 (2005)
23. J. Sylvestre, A. Blander, J. Electron. Mater. 37, 1618 (2008)
24. L.P. Lehman, Y. Xing, T.R. Bieler, E.J. Cotts, Acta Metaer. 58, 3546 (2010)
25. B. Arfaei, N. Kim, E.J. Cotts, J. Electron. Mater. 41, 362 (2012)
26. H. Zhang, F. Sun, X. Li, Y. Liu, T. Xin, in 16th International Conference on Electronic
Packaging Technology, p. 1125 (2015)
27. D.C. Yeh, H.B. Huntington, Phys. Rev. Lett. 53, 1469 (1984)
P. Liu
The key factors that modulate the TSV failure modes are not very clear based on the
limited reports and more studies are needed. It is believed that the key parameters
that modulate the EM of Cu damascene interconnects, including current crowding,
Cu/passivation interface, Cu reservoir, and thermal mechanical stress gradient will
be also the key factors for TSV related EM failure.
Acknowledgements The editors would like to thank Kwang-Lung Lin from National Cheng Kung
University in Taiwan for his critical review of this Chapter.
References
1. S.Q. Gu, MRS Bull. 40, 233 (2015)
2. X. Zhang, J.K. Lin, S. Wickramanayaka, S. Zhang, R. Weerasekera, R. Dutta, K.F. Chang, K.J.
Chui, H.Y. Li, D.S.W. Ho, L. Ding, G. Katti, S. Bhattacharya, D.L. Kwong, Appl. Phys. Rev.
2, 021308 (2005)
3. K.N. Tu, H.Y. Hsiao, C. Chen, Microelectr. Reliab. 53, 2 (2013)
4. K.N. Tu, T. Tian, Sci. China 56, 1740 (2013)
5. K.N. Chen, T.N. Tu, MRS Bull. 40, 219 (2015)
6. L. Xu, J.K. Han, J.J. Liang, K.N. Tu, Y.S. Lai, Appl. Phys. Lett. 92, 262104 (2006)
7. P.L. Liu, F.Y. Ouyang, S. Ou, Z. Fu, G. Deepak, ASME InterPACK Conference, vol. 1, p. 703
(2009)
8. C. Chen, H.M. Tong, K.N. Tu, Annu. Rev. Mater. Res. 40, 531 (2010)
9. M.H. Lu, D.Y. Shih, P. Lauro, C. Goldsmith, D.W. Henderson, Appl. Phys. Lett. 92, 211909
(2008)
10. Y. Wang, K.H. Lu, V. Gupta, L. Stiborek, D. Shirley, S.H. Chae, J. Im, P.S. Ho, J. Mater. Res.
27, 1131 (2012)
11. K.N. Tu, J. Appl. Phys. 94, 5451 (2003)
12. S.K. Seo, S.K. Kang, D.Y. Shih, H.M. Lee, J. Metals 61, 22 (2010)
13. M. Lu, D.Y. Shih, S.K. Kang, C. Goldsmith, P. Flaitz, J. Appl. Phys. 106, 053509 (2009)
14. I.A. Blech, J. Appl. Phys. 47, 1203 (1976)
15. M.H. Lu, D.Y. Shih, P. Lauro, C. Goldsmith, Appl. Phys. Lett. 94, 011912 (2009)
16. Y.C. Hsu, C.K. Chou, P.C. Liu, C. Chen, D.J. Yao, T. Chou, K.N. Tu, J. Appl. Phys. 98, 033523
(2005)
17. M.S. Yoon, M.K. Ko, B.N. Kim, B.J. Kim, Y.B. Park, Y.C. Joo, J. Appl. Phys. 103, 073701
(2008)
18. J.R. Black, in Processing 6th Annual International Reliability Physics Symposium, p. 148
(1967)
19. T.C. Huang, T.L. Yang, J.H. Ke, C.H. Hsueh, C.R. Kao, Scripta Mater. 80, 37 (2014)
20. Y. Wang, P.S. Ho, Appl. Phys. Lett. 103, 121909 (2013)
21. P.L. Liu, O. Alan, D. Goyal, in Electronic Components and Technology Conference (ECTC),
p. 95 (2015)
22. A.U. Telang, T.R. Bieler, Scripta Matter. 52, 1027 (2005)
23. J. Sylvestre, A. Blander, J. Electron. Mater. 37, 1618 (2008)
24. L.P. Lehman, Y. Xing, T.R. Bieler, E.J. Cotts, Acta Metaer. 58, 3546 (2010)
25. B. Arfaei, N. Kim, E.J. Cotts, J. Electron. Mater. 41, 362 (2012)
26. H. Zhang, F. Sun, X. Li, Y. Liu, T. Xin, in 16th International Conference on Electronic
Packaging Technology, p. 1125 (2015)
27. D.C. Yeh, H.B. Huntington, Phys. Rev. Lett. 53, 1469 (1984)