11 Fundamentals of Solder Alloys in 3D Packaging
345
19. J. Bertheau, P. Bleuet, R. Pantel, et al., Microstructural and morphological characterization of
SnAgCu micro-bumps for integration in 3D interconnects, in 63rd Electronic Components and
Technology Conference, IEEE (CPMT, Lake Buena Vista, Florida, 2013), p. 1127
20. B. Dang, S. Wright, J. Maria, et al., NiFe-based ball-limiting-metallurge (BLM) for microbumps
at 50 µm pitch in 3D chip stacks, in 63rd Electronic Components and Technology Conference,
IEEE (CPMT, Lake Buena Vista, Florida, 2013), p. 1595
21. H.Y. Son, S.K. Noh, H.H. Jung, et al., Reliability studies on micro-bump for 3-D TSV integration, in 63rd Electronic Components and Technology Conference, IEEE (CPMT, Lake Buena
Vista, Florida, 2013), p. 29
22. J.Y. Juang, S.Y. Huang, C.J. Zhan, et al., Effect of metal finishing fabricated by electro and
electro-less plating process on reliability performance of 30 µm-pitch solder microbump interconnection, in 63rd Electronic Components and Technology Conference, IEEE (CPMT, Lake
Buena Vista, Florida, 2013), p. 653
23. Y. Ito, T. Fukushima, K.W. Lee, et al., Flux-assisted self-assembly with microbump bonding
for 3D heterogeneous integration, in 63rd Electronic Components and Technology Conference,
IEEE (CPMT, Lake Buena Vista, Florida, 2013), p. 891
24. Y. Wang, S.H. Chae, J. Im, et al., Kinetic study of intermetallic growth and its reliability
implications in Pb-free Sn-based microbumps in 3D integration, in 63rd Electronic Components
and Technology Conference, IEEE (CPMT, Lake Buena Vista, Florida, 2013), p. 1953
25. Y. Wang, S.Y. Chae, R. Dunne, et al., Effect of intermetallic formation on electromigration
reliability of TSV-microbump joints in 3D interconnect, in 62nd Electronic Components and
Technology Conference, IEEE (CPMT, San Diego, California, 2012), p. 319
26. C.K. Lee, C.J. Zhan, J.H. Lau, et al., Wafer bumping, assembly, and reliability assessment of
µbumps with 5 µm pads on 10 µm pitch for 3D IC integration, in 62nd Electronic Components
and Technology Conference, IEEE (CPMT, San Diego, California, 2012), p. 636
27. Y.S. Park, J.W. Shin, Y.W. Choi, et al., A study on the intermetallic growth of fine-pitch Cu
pillar/SnAg solder bump for 3D-TSV interconnection, in 62nd Electronic Components and
Technology Conference, IEEE (CPMT, San Diego, California, 2012), p. 2053
28. R. Dunne, Y. Takahashi, Mawatari et al., Development of a stacked WCSP package platform
using TSV (through silicon via) technology, in 62nd Electronic Components and Technology
Conference, IEEE (CPMT, San Diego, California, 2012), p. 1062
29. Y. Choi, J. Shin, K.W. Paik., 3D-TSV vertical interconnection method using Cu/SnAg double
bumps and B-stage non-conductive adhesives (NCAs), in 62nd Electronic Components and
Technology Conference, IEEE (CPMT, San Diego, California, 2012), p. 1077
30. Y.M. Lin, C.J. Zhan, J.Y. Juang, J.H. Lau, et al., Electromigration in Ni/Sn intermetallic
microbump joint for 3D IC chip stacking, in 61st Electronic Components and Technology
Conference, IEEE (CPMT, Lake Buena Vista, Florida, 2011), p. 332
31. A. Syed, K. Dhandapani, R. Moody, et al., Cu pillar and µ-bump electromigration reliability
and comparison with high Pb, SnPb, and SnAg bumps, in 61st Electronic Components and
Technology Conference, IEEE (CPMT, Lake Buena Vista, Florida, 2011), p. 332
32. W. Zhang, B. Dimcic, P. Limaye, et al., Ni/Cu/Sn bumping scheme for fine-pitch micro-bump
connections, in 61st Electronic Components and Technology Conference, IEEE (CPMT, Lake
Buena Vista, Florida, 2011), p. 109
33. Y. Ito, T. Fukushima, K.W. Lee, et al., Reductant-assisted self-assembly with Cu/Sn microbump
for three-dimensional heerogeneous integration. Jap. J. Appl. Phys. 52, 04CB09-1–04CB09-6
(2013)
34. Y.H. Ko, M.S. Kim, J. Bang et al., Properties and reliability of solder microbump joints between
Si chips and a flexible substrate. J. Elect. Mat. 44(7), 2458–2466 (2015)
35. H.Y. Hsiao, A.D. Trigg, T.C. Chai, Failure mechanism for fine pitch microbump in Cu/Sn/Cu
system during current stressing. IEEE Trans. Comp. Pack. Manuf. Tech. 5(3), 314–319 (2015)
36. M. Hansen, K. Anderko, Constitution of Binary Alloys, 2nd edn. (McGraw-Hill, New York,
1985)
37. H.Y. You, Y.S. Lee, S.K. Lee, et al., Reliability of 20 µm microbump interconnects, in 61st
Electronic Components and Technology Conference, IEEE (CPMT, Lake Buena Vista, Florida,
2011), p. 608
345
19. J. Bertheau, P. Bleuet, R. Pantel, et al., Microstructural and morphological characterization of
SnAgCu micro-bumps for integration in 3D interconnects, in 63rd Electronic Components and
Technology Conference, IEEE (CPMT, Lake Buena Vista, Florida, 2013), p. 1127
20. B. Dang, S. Wright, J. Maria, et al., NiFe-based ball-limiting-metallurge (BLM) for microbumps
at 50 µm pitch in 3D chip stacks, in 63rd Electronic Components and Technology Conference,
IEEE (CPMT, Lake Buena Vista, Florida, 2013), p. 1595
21. H.Y. Son, S.K. Noh, H.H. Jung, et al., Reliability studies on micro-bump for 3-D TSV integration, in 63rd Electronic Components and Technology Conference, IEEE (CPMT, Lake Buena
Vista, Florida, 2013), p. 29
22. J.Y. Juang, S.Y. Huang, C.J. Zhan, et al., Effect of metal finishing fabricated by electro and
electro-less plating process on reliability performance of 30 µm-pitch solder microbump interconnection, in 63rd Electronic Components and Technology Conference, IEEE (CPMT, Lake
Buena Vista, Florida, 2013), p. 653
23. Y. Ito, T. Fukushima, K.W. Lee, et al., Flux-assisted self-assembly with microbump bonding
for 3D heterogeneous integration, in 63rd Electronic Components and Technology Conference,
IEEE (CPMT, Lake Buena Vista, Florida, 2013), p. 891
24. Y. Wang, S.H. Chae, J. Im, et al., Kinetic study of intermetallic growth and its reliability
implications in Pb-free Sn-based microbumps in 3D integration, in 63rd Electronic Components
and Technology Conference, IEEE (CPMT, Lake Buena Vista, Florida, 2013), p. 1953
25. Y. Wang, S.Y. Chae, R. Dunne, et al., Effect of intermetallic formation on electromigration
reliability of TSV-microbump joints in 3D interconnect, in 62nd Electronic Components and
Technology Conference, IEEE (CPMT, San Diego, California, 2012), p. 319
26. C.K. Lee, C.J. Zhan, J.H. Lau, et al., Wafer bumping, assembly, and reliability assessment of
µbumps with 5 µm pads on 10 µm pitch for 3D IC integration, in 62nd Electronic Components
and Technology Conference, IEEE (CPMT, San Diego, California, 2012), p. 636
27. Y.S. Park, J.W. Shin, Y.W. Choi, et al., A study on the intermetallic growth of fine-pitch Cu
pillar/SnAg solder bump for 3D-TSV interconnection, in 62nd Electronic Components and
Technology Conference, IEEE (CPMT, San Diego, California, 2012), p. 2053
28. R. Dunne, Y. Takahashi, Mawatari et al., Development of a stacked WCSP package platform
using TSV (through silicon via) technology, in 62nd Electronic Components and Technology
Conference, IEEE (CPMT, San Diego, California, 2012), p. 1062
29. Y. Choi, J. Shin, K.W. Paik., 3D-TSV vertical interconnection method using Cu/SnAg double
bumps and B-stage non-conductive adhesives (NCAs), in 62nd Electronic Components and
Technology Conference, IEEE (CPMT, San Diego, California, 2012), p. 1077
30. Y.M. Lin, C.J. Zhan, J.Y. Juang, J.H. Lau, et al., Electromigration in Ni/Sn intermetallic
microbump joint for 3D IC chip stacking, in 61st Electronic Components and Technology
Conference, IEEE (CPMT, Lake Buena Vista, Florida, 2011), p. 332
31. A. Syed, K. Dhandapani, R. Moody, et al., Cu pillar and µ-bump electromigration reliability
and comparison with high Pb, SnPb, and SnAg bumps, in 61st Electronic Components and
Technology Conference, IEEE (CPMT, Lake Buena Vista, Florida, 2011), p. 332
32. W. Zhang, B. Dimcic, P. Limaye, et al., Ni/Cu/Sn bumping scheme for fine-pitch micro-bump
connections, in 61st Electronic Components and Technology Conference, IEEE (CPMT, Lake
Buena Vista, Florida, 2011), p. 109
33. Y. Ito, T. Fukushima, K.W. Lee, et al., Reductant-assisted self-assembly with Cu/Sn microbump
for three-dimensional heerogeneous integration. Jap. J. Appl. Phys. 52, 04CB09-1–04CB09-6
(2013)
34. Y.H. Ko, M.S. Kim, J. Bang et al., Properties and reliability of solder microbump joints between
Si chips and a flexible substrate. J. Elect. Mat. 44(7), 2458–2466 (2015)
35. H.Y. Hsiao, A.D. Trigg, T.C. Chai, Failure mechanism for fine pitch microbump in Cu/Sn/Cu
system during current stressing. IEEE Trans. Comp. Pack. Manuf. Tech. 5(3), 314–319 (2015)
36. M. Hansen, K. Anderko, Constitution of Binary Alloys, 2nd edn. (McGraw-Hill, New York,
1985)
37. H.Y. You, Y.S. Lee, S.K. Lee, et al., Reliability of 20 µm microbump interconnects, in 61st
Electronic Components and Technology Conference, IEEE (CPMT, Lake Buena Vista, Florida,
2011), p. 608