344
K.-L. Lin
References
1. C.K. Lee, C.J. Zhan, J.H. Lau, et al., Wafer bumping, assembly, and reliability assessment of
µbumps with 5 µm pads on 10 µm pitch for 3D IC integration, in 62nd Electronic Components
and Technology Conference IEEE (CPMT, San Diego, 2012), p. 636
2. J.W. Peng, Y.S. Chen, Y. Chen, et al., Removed organic solderability preservative (OSPs) by
Ar/O 2 microwave plasma to improve solder joint in thermal compression flip chip bonding,
in 64th Electronic Components and Technology Conference IEEE (CPMT, Lake Buena Vista,
Florida, 2014), p. 1584
3. L. Panchenko, K. Croes, Wolf I. De et al., Degradation of Cu 6 Sn 5 intermetallic compound by
pore formation in solid-liquid interdiffusion Cu/Sn microbump interconnects. Microelect. Eng.
117, 26–34 (2014)
4. C. Li, X. Wang, S. Song et al., 21-Layer 3-D chip stacking based on Cu–Sn bump bonding.
IEEE Trans. Comp. Pack Manu. Tech. 5(5), 627–633 (2013)
5. K.N. Tu, H.Y. Hsiao, C. Chen, Transition from flip chip solder joint to 3D IC microbump: its
effect on microstructure anisotropy. Microelect. Rel. 53, 2–6 (2013)
6. S.Y. Huang, T.C. Chang, R.S. Cheng, et al., Failure mechanism of 20 µm pitch microjoint within
a chip stacking architecture, in 61st Electronic Components and Technology Conference, IEEE
(CPMT, Lake Buena Vista, Florida, 2011), p. 886
7. W.H. Chen, C.F. Yu, H.C. Cheng et al., IMC growth reaction and its effects on solder joint
thermal cycling reliability of 3D chip stacking packaging. Microelec. Rel. 53, 30–40 (2013)
8. Y.J. Chen, C.K. Chung, C.R. Yang et al., Single-joint shear strength of micro Cu pillar solder
bumps with different amounts of intermetallics. Microelec. Rel. 53, 47–52 (2013)
9. T. Suzuki, K. Asami, Y. Kitamura, T. Fukushima, et al., Challenges of high-robustness
self-assembly with Cu/Sn–Ag microbump bonding for die-to-wafer 3D integration, in 65th
Electronic Components and Technology Conference, IEEE (CPMT, San Diego, 2015), p. 312
10. P. Soussan, B. Majeed, P.L. Boterf, et al., Evaluation of Sn-based microbumping technology for
hybrid IR detectors. 10 µm pitch to 5 µm pitch, in 65th Electronic Components and Technology
Conference, IEEE (CPMT, San Diego, 2015), p. 597
11. H.Y. Chen, C.H. Tung, Y.L. Hsiao, et al., Electromigration immortality of purely intermetallic
micro-bump for 3D integration, in 65th Electronic Components and Technology Conference,
IEEE CPMT, San Diego, p 620
12. K.H. Kuo, C. Mao, K. Wang, et al., The impact and performance of electromigration on
fine pitch Cu pillar with different bump structure for flip chip packaging, in 65th Electronic
Components and Technology Conference, IEEE (CPMT, San Diego, 2015), p. 626
13. J.W. Shin, Y.S. Kim, H.G. Lee, et al., Effects of thermos-compression bonding parameters on
joint formation of micro-bumps in non-conductive film, in 65th Electronic Components and
Technology Conference, IEEE (CPMT, San Diego, 2015), p. 910
14. N. Islam, G. Kim, K.O. Kim, Electromigration for advanced Cu interconnect and the challenges
with reduced pitch bumps, in 64th Electronic Components and Technology Conference, IEEE
(CPMT, Lake Buena Vista, Florida, 2014), p. 50
15. K.H. Kuo, J. Lee, F.L. Chien, et al., Electromigration performance of Cu pillar bump for flip
chip packaging with bump on trace by using thermal compression bonding, in 64th Electronic
Components and Technology Conference, IEEE (CPMT, Lake Buena Vista, Florida, 2014),
p. 56
16. Y. Liu, M. Li, D.W. Kim, et al., Filler trap and solder extrusion in 3D IC thermo-compression
bonded microbumps, in 64th Electronic Components and Technology Conference, IEEE
(CPMT, Lake Buena Vista, Florida, 2014), p. 609
17. K. Murayama, M. Aizawa, M. Higashi, Study of electro-migration resistivity of microbump
using SnBi solder, in 64th Electronic Components and Technology Conference, IEEE (CPMT,
Lake Buena Vista, Florida, 2014), p. 1166
18. J. De Vos, L. Bogaerts, T. Buisson, et al., Microstructural and morphological characterization
of SnAgCu micro-bumps for integration in 3D interconnects, in 63rd Electronic Components
and Technology Conference, IEEE (CPMT, Las Vegas, Nevada, 2013), p. 1122
K.-L. Lin
References
1. C.K. Lee, C.J. Zhan, J.H. Lau, et al., Wafer bumping, assembly, and reliability assessment of
µbumps with 5 µm pads on 10 µm pitch for 3D IC integration, in 62nd Electronic Components
and Technology Conference IEEE (CPMT, San Diego, 2012), p. 636
2. J.W. Peng, Y.S. Chen, Y. Chen, et al., Removed organic solderability preservative (OSPs) by
Ar/O 2 microwave plasma to improve solder joint in thermal compression flip chip bonding,
in 64th Electronic Components and Technology Conference IEEE (CPMT, Lake Buena Vista,
Florida, 2014), p. 1584
3. L. Panchenko, K. Croes, Wolf I. De et al., Degradation of Cu 6 Sn 5 intermetallic compound by
pore formation in solid-liquid interdiffusion Cu/Sn microbump interconnects. Microelect. Eng.
117, 26–34 (2014)
4. C. Li, X. Wang, S. Song et al., 21-Layer 3-D chip stacking based on Cu–Sn bump bonding.
IEEE Trans. Comp. Pack Manu. Tech. 5(5), 627–633 (2013)
5. K.N. Tu, H.Y. Hsiao, C. Chen, Transition from flip chip solder joint to 3D IC microbump: its
effect on microstructure anisotropy. Microelect. Rel. 53, 2–6 (2013)
6. S.Y. Huang, T.C. Chang, R.S. Cheng, et al., Failure mechanism of 20 µm pitch microjoint within
a chip stacking architecture, in 61st Electronic Components and Technology Conference, IEEE
(CPMT, Lake Buena Vista, Florida, 2011), p. 886
7. W.H. Chen, C.F. Yu, H.C. Cheng et al., IMC growth reaction and its effects on solder joint
thermal cycling reliability of 3D chip stacking packaging. Microelec. Rel. 53, 30–40 (2013)
8. Y.J. Chen, C.K. Chung, C.R. Yang et al., Single-joint shear strength of micro Cu pillar solder
bumps with different amounts of intermetallics. Microelec. Rel. 53, 47–52 (2013)
9. T. Suzuki, K. Asami, Y. Kitamura, T. Fukushima, et al., Challenges of high-robustness
self-assembly with Cu/Sn–Ag microbump bonding for die-to-wafer 3D integration, in 65th
Electronic Components and Technology Conference, IEEE (CPMT, San Diego, 2015), p. 312
10. P. Soussan, B. Majeed, P.L. Boterf, et al., Evaluation of Sn-based microbumping technology for
hybrid IR detectors. 10 µm pitch to 5 µm pitch, in 65th Electronic Components and Technology
Conference, IEEE (CPMT, San Diego, 2015), p. 597
11. H.Y. Chen, C.H. Tung, Y.L. Hsiao, et al., Electromigration immortality of purely intermetallic
micro-bump for 3D integration, in 65th Electronic Components and Technology Conference,
IEEE CPMT, San Diego, p 620
12. K.H. Kuo, C. Mao, K. Wang, et al., The impact and performance of electromigration on
fine pitch Cu pillar with different bump structure for flip chip packaging, in 65th Electronic
Components and Technology Conference, IEEE (CPMT, San Diego, 2015), p. 626
13. J.W. Shin, Y.S. Kim, H.G. Lee, et al., Effects of thermos-compression bonding parameters on
joint formation of micro-bumps in non-conductive film, in 65th Electronic Components and
Technology Conference, IEEE (CPMT, San Diego, 2015), p. 910
14. N. Islam, G. Kim, K.O. Kim, Electromigration for advanced Cu interconnect and the challenges
with reduced pitch bumps, in 64th Electronic Components and Technology Conference, IEEE
(CPMT, Lake Buena Vista, Florida, 2014), p. 50
15. K.H. Kuo, J. Lee, F.L. Chien, et al., Electromigration performance of Cu pillar bump for flip
chip packaging with bump on trace by using thermal compression bonding, in 64th Electronic
Components and Technology Conference, IEEE (CPMT, Lake Buena Vista, Florida, 2014),
p. 56
16. Y. Liu, M. Li, D.W. Kim, et al., Filler trap and solder extrusion in 3D IC thermo-compression
bonded microbumps, in 64th Electronic Components and Technology Conference, IEEE
(CPMT, Lake Buena Vista, Florida, 2014), p. 609
17. K. Murayama, M. Aizawa, M. Higashi, Study of electro-migration resistivity of microbump
using SnBi solder, in 64th Electronic Components and Technology Conference, IEEE (CPMT,
Lake Buena Vista, Florida, 2014), p. 1166
18. J. De Vos, L. Bogaerts, T. Buisson, et al., Microstructural and morphological characterization
of SnAgCu micro-bumps for integration in 3D interconnects, in 63rd Electronic Components
and Technology Conference, IEEE (CPMT, Las Vegas, Nevada, 2013), p. 1122