268
S. Lee
0
1000
2000
3000
4000
5000
6000
7000
8000
0
2
4
6
8
1 0
UPH
Cycle time(s)
Flip chip attach
TCB
Fig. 10.9 Throughput plot: units per hour versus cycle time
10.2.2.2 Thermal Compression Bonding Tool
The TCB technique originally was developed for metal-to-metal diffusion bonding
when two metals are brought into atomic contact by applying force and heat simultaneously. The bonding technology was recently reconfigured for application of TSV
die stacking and next generation flip chip packages. Figure 10.10 shows schematics
of the TCB tool recently introduced into the packaging industry. The bond head
typically travels only in z-axis to guarantee its co-planarity to the bond stage, an
(a)
(b)
Bond head
Heater
Nozzle
Thermal Insulator
Bond stage
Heater
Pedestal
Inert chamber
O 2 <100ppm
Fig. 10.10 Schematics of (a) TCB tool and (b) co-planarity adjustment
S. Lee
0
1000
2000
3000
4000
5000
6000
7000
8000
0
2
4
6
8
1 0
UPH
Cycle time(s)
Flip chip attach
TCB
Fig. 10.9 Throughput plot: units per hour versus cycle time
10.2.2.2 Thermal Compression Bonding Tool
The TCB technique originally was developed for metal-to-metal diffusion bonding
when two metals are brought into atomic contact by applying force and heat simultaneously. The bonding technology was recently reconfigured for application of TSV
die stacking and next generation flip chip packages. Figure 10.10 shows schematics
of the TCB tool recently introduced into the packaging industry. The bond head
typically travels only in z-axis to guarantee its co-planarity to the bond stage, an
(a)
(b)
Bond head
Heater
Nozzle
Thermal Insulator
Bond stage
Heater
Pedestal
Inert chamber
O 2 <100ppm
Fig. 10.10 Schematics of (a) TCB tool and (b) co-planarity adjustment