8 Direct Cu to Cu Bonding and Alternative Bonding Techniques …
229
47. M. Park, S. Baek, S. Kim, S.E. Kim, Argon plasma treatment on Cu surface for Cu bonding in
3D integration and their characteristics. Appl. Surf. Sci. 324, 168–173 (2015). https://doi.org/
10.1016/j.apsusc.2014.10.098
48. S.L. Chua, G.Y. Chong, Y.H. Lee, C.S. Tan, Direct copper-copper wafer bonding with Ar/N 2
plasma activation, in 2015 IEEE International Conference on Electron Devices and Solid-State
Circuits (EDSSC) (IEEE, 2015), pp. 134–137
49. P. Enquist, G. Fountain, C. Petteway, A. Hollingsworth, H. Grady, Low cost of ownership
scalable copper direct bond interconnect 3D IC technology for three dimensional integrated
circuit applications, in 2009 IEEE International Conference on 3D System Integration (IEEE,
2009), pp. 1–6
50. P. Enquist, Metal/silicon oxide hybrid bonding, in P. Ramm, J.J.-Q.Lu, M.M.V. Taklo, Handb.
Wafer Bond eds by (Wiley, Weinheim, Germany, 2012), pp. 261–278
51. Y.-L. Chao, Q.-Y. Tong, T.-H. Lee, M. Reiche, R. Scholz, J.C.S. Woo, U. Gösele, Ammonium
hydroxide effect on low-temperature wafer bonding energy enhancement. Electrochem. SolidState Lett. 8, G74–G77 (2005). https://doi.org/10.1149/1.1857671
52. Q.-Y. Tong, G. Fountain, P. Enquist, Room temperature SiO 2 /SiO 2 covalent bonding. Appl.
Phys. Lett. 89, 042110 (2006). https://doi.org/10.1063/1.2240232
53. L. Di Cioccio, S. Moreau, L. Sanchez, F. Baudin, P. Gueguen, S. Mermoz, Y. Beilliard, R.
Taibi, Cu/SiO2 Hybrid Bonding, in P. Garrou, M. Koyanagi, P. Ramm, eds by Handb. 3D
Integr (Wiley, KGaA, 2014), pp 295–312
54. L.D. Cioccio, P. Gueguen, R. Taibi, D. Landru, G. Gaudin, C. Chappaz, F. Rieutord, F. de Crecy,
I. Radu, L.L. Chapelon, L. Clavelier, An overview of patterned metal/dielectric surface bonding:
mechanism, alignment and characterization. J. Electrochem. Soc. 158, P81–P86 (2011). https://
doi.org/10.1149/1.3577596
55. I. Radu, D. Landru, G. Gaudin, G. Riou, C. Tempesta, F. Letertre, L. Di Cioccio, P. Gueguen,
T. Signamarcheix, C. Euvrard, J. Dechamp, Recent Developments of Cu-Cu non-thermo
compression bonding for wafer-to-wafer 3D stacking, in 2010 IEEE International 3D Systems
Integration Conference (3DIC) (IEEE, Munich, 2010), pp. 1–6
56. C. Sabbione, L.D. Cioccio, L. Vandroux, J.-P. Nieto, F. Rieutord, Low temperature direct
bonding mechanisms of tetraethyl orthosilicate based silicon oxide films deposited by plasma
enhanced chemical vapor deposition. J. Appl. Phys. 112, 063501 (2012). https://doi.org/10.
1063/1.4752258
57. P. Gondcharton, B. Imbert, L. Benaissa, V. Carron, M. Verdier, Kinetics of low temperature
direct copper–copper bonding. Microsyst. Technol. 21, 995–1001 (2015). https://doi.org/10.
1007/s00542-015-2436-4
58. P. Gueguen, L. Di Cioccio, P. Gergaud, M. Rivoire, D. Scevola, M. Zussy, A.M. Charvet, L.
Bally, D. Lafond, L. Clavelier, Copper direct-bonding characterization and its interests for 3D
integration. J. Electrochem. Soc. 156, H772 (2009). https://doi.org/10.1149/1.3187271
59. A. Shigetou, T. Suga, Modified diffusion bonding for both Cu and SiO 2 at 150 °C in ambient
air, in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)
(IEEE, Las Vegas, NV, USA, 2010), pp. 872–877
60. R. He, M. Fujino, A. Yamauchi, Y. Wang, T. Suga, Combined surface activated bonding technique for low-temperature cu/dielectric hybrid bonding. ECS J. Solid State Sci. Technol. 5,
P419–P424 (2016). https://doi.org/10.1149/2.0201607jss
61. R. He, M. Fujino, A. Yamauchi, T. Suga, Combined surface-activated bonding technique for
low-temperature hydrophilic direct wafer bonding. Jpn J Appl Phys 55:04EC02 (2016). https://
doi.org/10.7567/jjap.55.04ec02
62. Q.-Y. Tong, J.G.G. Fountain, P.M. Enquist, Method for low temperature bonding and bonded
structure. US Patent 6,902,987, 2005
63. C. Sanders, Continued adoption of low temperature direct bond technology for high volume
3D commercial applications. 3D Architectures for Semiconductor Integration and Packaging
(3D ASIP) (2012)
64. L.D. Cioccio, F. Baudin, P. Gergaud, V. Delaye, P.-H. Jouneau, F. Rieutord, T. Signamarcheix,
Modeling and integration phenomena of metal-metal direct bonding technology. ECS Trans.
64, 339–355 (2014). https://doi.org/10.1149/06405.0339ecst
229
47. M. Park, S. Baek, S. Kim, S.E. Kim, Argon plasma treatment on Cu surface for Cu bonding in
3D integration and their characteristics. Appl. Surf. Sci. 324, 168–173 (2015). https://doi.org/
10.1016/j.apsusc.2014.10.098
48. S.L. Chua, G.Y. Chong, Y.H. Lee, C.S. Tan, Direct copper-copper wafer bonding with Ar/N 2
plasma activation, in 2015 IEEE International Conference on Electron Devices and Solid-State
Circuits (EDSSC) (IEEE, 2015), pp. 134–137
49. P. Enquist, G. Fountain, C. Petteway, A. Hollingsworth, H. Grady, Low cost of ownership
scalable copper direct bond interconnect 3D IC technology for three dimensional integrated
circuit applications, in 2009 IEEE International Conference on 3D System Integration (IEEE,
2009), pp. 1–6
50. P. Enquist, Metal/silicon oxide hybrid bonding, in P. Ramm, J.J.-Q.Lu, M.M.V. Taklo, Handb.
Wafer Bond eds by (Wiley, Weinheim, Germany, 2012), pp. 261–278
51. Y.-L. Chao, Q.-Y. Tong, T.-H. Lee, M. Reiche, R. Scholz, J.C.S. Woo, U. Gösele, Ammonium
hydroxide effect on low-temperature wafer bonding energy enhancement. Electrochem. SolidState Lett. 8, G74–G77 (2005). https://doi.org/10.1149/1.1857671
52. Q.-Y. Tong, G. Fountain, P. Enquist, Room temperature SiO 2 /SiO 2 covalent bonding. Appl.
Phys. Lett. 89, 042110 (2006). https://doi.org/10.1063/1.2240232
53. L. Di Cioccio, S. Moreau, L. Sanchez, F. Baudin, P. Gueguen, S. Mermoz, Y. Beilliard, R.
Taibi, Cu/SiO2 Hybrid Bonding, in P. Garrou, M. Koyanagi, P. Ramm, eds by Handb. 3D
Integr (Wiley, KGaA, 2014), pp 295–312
54. L.D. Cioccio, P. Gueguen, R. Taibi, D. Landru, G. Gaudin, C. Chappaz, F. Rieutord, F. de Crecy,
I. Radu, L.L. Chapelon, L. Clavelier, An overview of patterned metal/dielectric surface bonding:
mechanism, alignment and characterization. J. Electrochem. Soc. 158, P81–P86 (2011). https://
doi.org/10.1149/1.3577596
55. I. Radu, D. Landru, G. Gaudin, G. Riou, C. Tempesta, F. Letertre, L. Di Cioccio, P. Gueguen,
T. Signamarcheix, C. Euvrard, J. Dechamp, Recent Developments of Cu-Cu non-thermo
compression bonding for wafer-to-wafer 3D stacking, in 2010 IEEE International 3D Systems
Integration Conference (3DIC) (IEEE, Munich, 2010), pp. 1–6
56. C. Sabbione, L.D. Cioccio, L. Vandroux, J.-P. Nieto, F. Rieutord, Low temperature direct
bonding mechanisms of tetraethyl orthosilicate based silicon oxide films deposited by plasma
enhanced chemical vapor deposition. J. Appl. Phys. 112, 063501 (2012). https://doi.org/10.
1063/1.4752258
57. P. Gondcharton, B. Imbert, L. Benaissa, V. Carron, M. Verdier, Kinetics of low temperature
direct copper–copper bonding. Microsyst. Technol. 21, 995–1001 (2015). https://doi.org/10.
1007/s00542-015-2436-4
58. P. Gueguen, L. Di Cioccio, P. Gergaud, M. Rivoire, D. Scevola, M. Zussy, A.M. Charvet, L.
Bally, D. Lafond, L. Clavelier, Copper direct-bonding characterization and its interests for 3D
integration. J. Electrochem. Soc. 156, H772 (2009). https://doi.org/10.1149/1.3187271
59. A. Shigetou, T. Suga, Modified diffusion bonding for both Cu and SiO 2 at 150 °C in ambient
air, in 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC)
(IEEE, Las Vegas, NV, USA, 2010), pp. 872–877
60. R. He, M. Fujino, A. Yamauchi, Y. Wang, T. Suga, Combined surface activated bonding technique for low-temperature cu/dielectric hybrid bonding. ECS J. Solid State Sci. Technol. 5,
P419–P424 (2016). https://doi.org/10.1149/2.0201607jss
61. R. He, M. Fujino, A. Yamauchi, T. Suga, Combined surface-activated bonding technique for
low-temperature hydrophilic direct wafer bonding. Jpn J Appl Phys 55:04EC02 (2016). https://
doi.org/10.7567/jjap.55.04ec02
62. Q.-Y. Tong, J.G.G. Fountain, P.M. Enquist, Method for low temperature bonding and bonded
structure. US Patent 6,902,987, 2005
63. C. Sanders, Continued adoption of low temperature direct bond technology for high volume
3D commercial applications. 3D Architectures for Semiconductor Integration and Packaging
(3D ASIP) (2012)
64. L.D. Cioccio, F. Baudin, P. Gergaud, V. Delaye, P.-H. Jouneau, F. Rieutord, T. Signamarcheix,
Modeling and integration phenomena of metal-metal direct bonding technology. ECS Trans.
64, 339–355 (2014). https://doi.org/10.1149/06405.0339ecst