228
T. Suga et al.
30. A.K. Panigrahi, S. Bonam, T. Ghosh, S.G. Singh, S.R.K. Vanjari, Ultra-thin Ti passivation
mediated breakthrough in high quality Cu–Cu bonding at low temperature and pressure. Mater.
Lett. 169, 269–272 (2016). https://doi.org/10.1016/j.matlet.2016.01.126
31. Y.-P. Huang, Y.-S. Chien, R.-N. Tzeng, K.-N. Chen, Demonstration and electrical performance
of Cu–Cu bonding at 150 °C with pd passivation. IEEE Trans. Electron Devices 62, 2587–2592
(2015). https://doi.org/10.1109/TED.2015.2446507
32. E. Beyne, V.J. De, J. Derakhshandeh, L. England, G. Vakanas, Thin Nib or Cob capping layer
for non-noble metallic bonding landing pads (2015)
33. T.H. Kim, M.M.R. Howlader, T. Itoh, T. Suga, Room temperature Cu–Cu direct bonding using
surface activated bonding method. J. Vac. Sci. Technol., A 21, 449–453 (2003). https://doi.org/
10.1116/1.1537716
34. A. Shigetou, T. Itoh, T. Suga, Direct bonding of CMP-Cu films by surface activated bonding
(SAB) method. J. Mater. Sci. 40, 3149–3154 (2005). https://doi.org/10.1007/s10853-0052677-1
35. T. Suga, Feasibility of surface activated bonding for ultra-fine pitch interconnection-a new
concept of bump-less direct bonding for system level packaging, in 2000 Proceedings. 50th
Electronic Components and Technology Conference (Cat. No. 00CH37070) (IEEE, 2000),
pp. 702–705
36. T. Suga, K. Otsuka, Bump-less interconnect for next generation system packaging. in 2001
Proceedings. 51st Electronic Components and Technology Conference (Cat. No. 01CH37220),
(IEEE, 2001), pp. 1003–1008
37. A. Shigetou, T. Itoh, K. Sawada, T. Suga, Bumpless Interconnect of 6-μm-Pitch Cu Electrodes
at Room Temperature. IEEE Trans. Adv. Packag. 31, 473–478 (2008). https://doi.org/10.1109/
TADVP.2008.920644
38. A. Shigetou, T. Suga, Modified diffusion bonding of chemical mechanical polishing Cu at
150 °C at ambient pressure. Appl. Phys. Express 2, 056501 (2009). https://doi.org/10.1143/
APEX.2.056501
39. A. Shigetou, T. Suga, Vapor-assisted surface activation method for homo- and heterogeneous
bonding of Cu, SiO 2 , and polyimide at 150 °C and atmospheric pressure. J. Electron. Mater.
41, 2274–2280 (2012). https://doi.org/10.1007/s11664-012-2091-9
40. Shigetou, A. and Suga, T., Modified diffusion bond process for chemical mechanical polishing
(CMP)-Cu at 150 °C in ambient air, in 2009 59th Electronic Components and Technology
Conference (IEEE, San Diego, CA, 2009) pp. 365–369
41. A. Shigetou, T. Suga, Homo/heterogeneous bonding of Cu, SiO 2 , and polyimide by low temperature vapor-assisted surface activation method, in 2011 IEEE 61st Electronic Components and
Technology Conference (ECTC) (IEEE, Lake Buena Vista, 2011), pp. 32–36
42. T. Plach, K. Hingerl, S. Tollabimazraehno, G. Hesser, V. Dragoi, M. Wimplinger, Mechanisms
for room temperature direct wafer bonding. J. Appl. Phys. 113, 094905 (2013). https://doi.org/
10.1063/1.4794319
43. T. Suni, K. Henttinen, I. Suni, J. Mäkinen, Effects of plasma activation on hydrophilic bonding
of Si and SiO 2 . J. Electrochem. Soc. 149, G348–G351 (2002). https://doi.org/10.1149/1.147
7209
44. Y.-H. Wang, K. Nishida, M. Hutter, T. Kimura, T. Suga, Low-temperature process of fine-pitch
Au–Sn bump bonding in ambient air. Jpn. J. Appl. Phys. 46, 1961 (2007). https://doi.org/10.
1143/JJAP.46.1961
45. K. Okumura, E. Higurashi, T. Suga, K. Hagiwara, Influence of air exposure time on
bonding strength in Au-Au surface activated wafer bonding, in 2015 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC) (IEEE, 2015),
pp. 448–451
46. H. Ishida, T. Ogashiwa, Y. Kanehira, S. Ito, T. Yazaki, J. Mizuno, Low-temperature, surfacecompliant wafer bonding using sub-micron gold particles for wafer-level MEMS packaging, in
2012 IEEE 62nd Electronic Components and Technology Conference (IEEE, 2012), pp. 1140–
1145
T. Suga et al.
30. A.K. Panigrahi, S. Bonam, T. Ghosh, S.G. Singh, S.R.K. Vanjari, Ultra-thin Ti passivation
mediated breakthrough in high quality Cu–Cu bonding at low temperature and pressure. Mater.
Lett. 169, 269–272 (2016). https://doi.org/10.1016/j.matlet.2016.01.126
31. Y.-P. Huang, Y.-S. Chien, R.-N. Tzeng, K.-N. Chen, Demonstration and electrical performance
of Cu–Cu bonding at 150 °C with pd passivation. IEEE Trans. Electron Devices 62, 2587–2592
(2015). https://doi.org/10.1109/TED.2015.2446507
32. E. Beyne, V.J. De, J. Derakhshandeh, L. England, G. Vakanas, Thin Nib or Cob capping layer
for non-noble metallic bonding landing pads (2015)
33. T.H. Kim, M.M.R. Howlader, T. Itoh, T. Suga, Room temperature Cu–Cu direct bonding using
surface activated bonding method. J. Vac. Sci. Technol., A 21, 449–453 (2003). https://doi.org/
10.1116/1.1537716
34. A. Shigetou, T. Itoh, T. Suga, Direct bonding of CMP-Cu films by surface activated bonding
(SAB) method. J. Mater. Sci. 40, 3149–3154 (2005). https://doi.org/10.1007/s10853-0052677-1
35. T. Suga, Feasibility of surface activated bonding for ultra-fine pitch interconnection-a new
concept of bump-less direct bonding for system level packaging, in 2000 Proceedings. 50th
Electronic Components and Technology Conference (Cat. No. 00CH37070) (IEEE, 2000),
pp. 702–705
36. T. Suga, K. Otsuka, Bump-less interconnect for next generation system packaging. in 2001
Proceedings. 51st Electronic Components and Technology Conference (Cat. No. 01CH37220),
(IEEE, 2001), pp. 1003–1008
37. A. Shigetou, T. Itoh, K. Sawada, T. Suga, Bumpless Interconnect of 6-μm-Pitch Cu Electrodes
at Room Temperature. IEEE Trans. Adv. Packag. 31, 473–478 (2008). https://doi.org/10.1109/
TADVP.2008.920644
38. A. Shigetou, T. Suga, Modified diffusion bonding of chemical mechanical polishing Cu at
150 °C at ambient pressure. Appl. Phys. Express 2, 056501 (2009). https://doi.org/10.1143/
APEX.2.056501
39. A. Shigetou, T. Suga, Vapor-assisted surface activation method for homo- and heterogeneous
bonding of Cu, SiO 2 , and polyimide at 150 °C and atmospheric pressure. J. Electron. Mater.
41, 2274–2280 (2012). https://doi.org/10.1007/s11664-012-2091-9
40. Shigetou, A. and Suga, T., Modified diffusion bond process for chemical mechanical polishing
(CMP)-Cu at 150 °C in ambient air, in 2009 59th Electronic Components and Technology
Conference (IEEE, San Diego, CA, 2009) pp. 365–369
41. A. Shigetou, T. Suga, Homo/heterogeneous bonding of Cu, SiO 2 , and polyimide by low temperature vapor-assisted surface activation method, in 2011 IEEE 61st Electronic Components and
Technology Conference (ECTC) (IEEE, Lake Buena Vista, 2011), pp. 32–36
42. T. Plach, K. Hingerl, S. Tollabimazraehno, G. Hesser, V. Dragoi, M. Wimplinger, Mechanisms
for room temperature direct wafer bonding. J. Appl. Phys. 113, 094905 (2013). https://doi.org/
10.1063/1.4794319
43. T. Suni, K. Henttinen, I. Suni, J. Mäkinen, Effects of plasma activation on hydrophilic bonding
of Si and SiO 2 . J. Electrochem. Soc. 149, G348–G351 (2002). https://doi.org/10.1149/1.147
7209
44. Y.-H. Wang, K. Nishida, M. Hutter, T. Kimura, T. Suga, Low-temperature process of fine-pitch
Au–Sn bump bonding in ambient air. Jpn. J. Appl. Phys. 46, 1961 (2007). https://doi.org/10.
1143/JJAP.46.1961
45. K. Okumura, E. Higurashi, T. Suga, K. Hagiwara, Influence of air exposure time on
bonding strength in Au-Au surface activated wafer bonding, in 2015 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC) (IEEE, 2015),
pp. 448–451
46. H. Ishida, T. Ogashiwa, Y. Kanehira, S. Ito, T. Yazaki, J. Mizuno, Low-temperature, surfacecompliant wafer bonding using sub-micron gold particles for wafer-level MEMS packaging, in
2012 IEEE 62nd Electronic Components and Technology Conference (IEEE, 2012), pp. 1140–
1145