8 Direct Cu to Cu Bonding and Alternative Bonding Techniques …
227
11. T. Fukushima, Y. Yamada, H. Kikuchi, M. Koyanagi, New three-dimensional integration technology using self-assembly technique, in IEEE International Electron Devices Meeting, 2005.
IEDM Technical Digest. (IEEE, 2005), pp. 348–351
12. Y.-S. Tang, Y.-J. Chang, K.-N. Chen, Wafer-level Cu–Cu bonding technology. Microelectron.
Reliab. 52, 312–320 (2012). https://doi.org/10.1016/j.microrel.2011.04.016
13. C.S. Tan, R. Reif, N.D. Theodore, S. Pozder, Observation of interfacial void formation in
bonded copper layers. Appl. Phys. Lett. 87, 201909 (2005). https://doi.org/10.1063/1.2130534
14. B. Rebhan, T. Plach, S. Tollabimazraehno, V. Dragoi, M. Kawano, Cu–Cu wafer bonding: An
enabling technology for three-dimensional integration. In: 2014 International Conference on
Electronics Packaging (ICEP) (IEEE, 2014). pp 475–479
15. B. Rebhan, S. Tollabimazraehno, G. Hesser, V. Dragoi, Analytical methods used for low temperature Cu–Cu wafer bonding process evaluation. Microsyst. Technol. 21, 1003–1013 (2015).
https://doi.org/10.1007/s00542-015-2446-2
16. W. Yang, M. Akaike, M. Fujino, T. Suga, A combined process of formic acid pretreatment for
low-temperature bonding of copper electrodes. ECS J. Solid State Sci. Technol. 2, P271–P274
(2013). https://doi.org/10.1149/2.010306jss
17. W. Yang, M. Akaike, T. Suga, Effect of formic acid vapor in situ treatment process on Cu
low-temperature bonding. IEEE Trans. Compon. Packag. Manuf. Technol. 4, 951–956 (2014).
https://doi.org/10.1109/TCPMT.2014.2315761
18. P.-I. Wang, S.H. Lee, T.C. Parker, M.D. Frey, T. Karabacak, J.-Q. Lu, T.-M. Lu, Low temperature
wafer bonding by Copper Nanorod Array. Electrochem. Solid-State Lett. 12, H138–H141
(2009). https://doi.org/10.1149/1.3075900
19. T. Ishizaki, R. Watanabe, A new one-pot method for the synthesis of Cu nanoparticles for low
temperature bonding. J. Mater. Chem. 22, 25198–25206 (2012). https://doi.org/10.1039/C2J
M34954J
20. C.-M. Liu, H.-W. Lin, Y.-S. Huang, Y.-C. Chu, C. Chen, D.-R. Lyu, K.-N. Chen, K.-N.
Tu, Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces
of nanotwinned Cu. Sci. Rep. 5, 9734 (2015). https://doi.org/10.1038/srep09734
21. T. Shimatsu, M. Uomoto, Atomic diffusion bonding of wafers with thin nanocrystalline metal
films. J. Vac. Sci. Technol., B 28, 706–714 (2010). https://doi.org/10.1116/1.3437515
22. T. Shimatsu, M. Uomoto, Room temperature bonding of wafers with thin nanocrystalline metal
films. ECS Trans. 33, 61–72 (2010). https://doi.org/10.1149/1.3483494
23. V. Smet, M. Kobayashi, T. Wang, P.M. Raj, R. Tummala, A new era in manufacturable, lowtemperature and ultra-fine pitch Cu interconnections and assembly without solders, in 2014
IEEE 64th Electronic Components and Technology Conference (ECTC) (IEEE, 2014), pp. 484–
489
24. C.S. Tan, D.F. Lim, S.G. Singh, S.K. Goulet, M. Bergkvist, Cu–Cu diffusion bonding enhancement at low temperature by surface passivation using self-assembled monolayer of alkane-thiol.
Appl. Phys. Lett. 95, 192108 (2009). https://doi.org/10.1063/1.3263154
25. D.F. Lim, J. Wei, K.C. Leong, C.S. Tan, Surface passivation of Cu for low temperature 3D
wafer bonding. ECS Solid State Lett. 1, P11–P14 (2012)
26. D.F. Lim, J. Wei, K.C. Leong, C.S. Tan, Cu passivation for enhanced low temperature (300 °C)
bonding in 3D integration. Microelectron. Eng. 106, 144–148 (2013). https://doi.org/10.1016/
j.mee.2013.01.032
27. L. Peng, L. Zhang, J. Fan, H.Y. Li, D.F. Lim, C.S. Tan, Ultrafine pitch (6 μm) of recessed
and bonded Cu–Cu interconnects by three-dimensional wafer stacking. IEEE Electron. Device
Lett. 33, 1747–1749 (2012). https://doi.org/10.1109/LED.2012.2218273
28. S. Armini, Y. Vandelaer, A. Lesniewska, V. Cherman, I. De Preter, F. Inoue, J. Derakhshandeh,
G. Vakanas, E. Beyne, Thiol-based self-assembled monolayers (SAMs) as an alternative surface
finish for 3D Cu microbumps, in TMS 2015 Proceedings Supplements, (Wiley, London, 2015),
pp. 1355–1360
29. Y.-P. Huang, Y.-S. Chien, R.-N. Tzeng, M.-S. Shy, T.-H. Lin, K.-H. Chen, C.-T. Chiu, J.-C.
Chiou, C.-T. Chuang, W. Hwang, H.-M. Tong, K.-N. Chen, Novel Cu-to-Cu bonding With Ti
passivation at 180 °C in 3-D integration. IEEE Electron. Device Lett. 34, 1551–1553 (2013).
https://doi.org/10.1109/LED.2013.2285702
227
11. T. Fukushima, Y. Yamada, H. Kikuchi, M. Koyanagi, New three-dimensional integration technology using self-assembly technique, in IEEE International Electron Devices Meeting, 2005.
IEDM Technical Digest. (IEEE, 2005), pp. 348–351
12. Y.-S. Tang, Y.-J. Chang, K.-N. Chen, Wafer-level Cu–Cu bonding technology. Microelectron.
Reliab. 52, 312–320 (2012). https://doi.org/10.1016/j.microrel.2011.04.016
13. C.S. Tan, R. Reif, N.D. Theodore, S. Pozder, Observation of interfacial void formation in
bonded copper layers. Appl. Phys. Lett. 87, 201909 (2005). https://doi.org/10.1063/1.2130534
14. B. Rebhan, T. Plach, S. Tollabimazraehno, V. Dragoi, M. Kawano, Cu–Cu wafer bonding: An
enabling technology for three-dimensional integration. In: 2014 International Conference on
Electronics Packaging (ICEP) (IEEE, 2014). pp 475–479
15. B. Rebhan, S. Tollabimazraehno, G. Hesser, V. Dragoi, Analytical methods used for low temperature Cu–Cu wafer bonding process evaluation. Microsyst. Technol. 21, 1003–1013 (2015).
https://doi.org/10.1007/s00542-015-2446-2
16. W. Yang, M. Akaike, M. Fujino, T. Suga, A combined process of formic acid pretreatment for
low-temperature bonding of copper electrodes. ECS J. Solid State Sci. Technol. 2, P271–P274
(2013). https://doi.org/10.1149/2.010306jss
17. W. Yang, M. Akaike, T. Suga, Effect of formic acid vapor in situ treatment process on Cu
low-temperature bonding. IEEE Trans. Compon. Packag. Manuf. Technol. 4, 951–956 (2014).
https://doi.org/10.1109/TCPMT.2014.2315761
18. P.-I. Wang, S.H. Lee, T.C. Parker, M.D. Frey, T. Karabacak, J.-Q. Lu, T.-M. Lu, Low temperature
wafer bonding by Copper Nanorod Array. Electrochem. Solid-State Lett. 12, H138–H141
(2009). https://doi.org/10.1149/1.3075900
19. T. Ishizaki, R. Watanabe, A new one-pot method for the synthesis of Cu nanoparticles for low
temperature bonding. J. Mater. Chem. 22, 25198–25206 (2012). https://doi.org/10.1039/C2J
M34954J
20. C.-M. Liu, H.-W. Lin, Y.-S. Huang, Y.-C. Chu, C. Chen, D.-R. Lyu, K.-N. Chen, K.-N.
Tu, Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces
of nanotwinned Cu. Sci. Rep. 5, 9734 (2015). https://doi.org/10.1038/srep09734
21. T. Shimatsu, M. Uomoto, Atomic diffusion bonding of wafers with thin nanocrystalline metal
films. J. Vac. Sci. Technol., B 28, 706–714 (2010). https://doi.org/10.1116/1.3437515
22. T. Shimatsu, M. Uomoto, Room temperature bonding of wafers with thin nanocrystalline metal
films. ECS Trans. 33, 61–72 (2010). https://doi.org/10.1149/1.3483494
23. V. Smet, M. Kobayashi, T. Wang, P.M. Raj, R. Tummala, A new era in manufacturable, lowtemperature and ultra-fine pitch Cu interconnections and assembly without solders, in 2014
IEEE 64th Electronic Components and Technology Conference (ECTC) (IEEE, 2014), pp. 484–
489
24. C.S. Tan, D.F. Lim, S.G. Singh, S.K. Goulet, M. Bergkvist, Cu–Cu diffusion bonding enhancement at low temperature by surface passivation using self-assembled monolayer of alkane-thiol.
Appl. Phys. Lett. 95, 192108 (2009). https://doi.org/10.1063/1.3263154
25. D.F. Lim, J. Wei, K.C. Leong, C.S. Tan, Surface passivation of Cu for low temperature 3D
wafer bonding. ECS Solid State Lett. 1, P11–P14 (2012)
26. D.F. Lim, J. Wei, K.C. Leong, C.S. Tan, Cu passivation for enhanced low temperature (300 °C)
bonding in 3D integration. Microelectron. Eng. 106, 144–148 (2013). https://doi.org/10.1016/
j.mee.2013.01.032
27. L. Peng, L. Zhang, J. Fan, H.Y. Li, D.F. Lim, C.S. Tan, Ultrafine pitch (6 μm) of recessed
and bonded Cu–Cu interconnects by three-dimensional wafer stacking. IEEE Electron. Device
Lett. 33, 1747–1749 (2012). https://doi.org/10.1109/LED.2012.2218273
28. S. Armini, Y. Vandelaer, A. Lesniewska, V. Cherman, I. De Preter, F. Inoue, J. Derakhshandeh,
G. Vakanas, E. Beyne, Thiol-based self-assembled monolayers (SAMs) as an alternative surface
finish for 3D Cu microbumps, in TMS 2015 Proceedings Supplements, (Wiley, London, 2015),
pp. 1355–1360
29. Y.-P. Huang, Y.-S. Chien, R.-N. Tzeng, M.-S. Shy, T.-H. Lin, K.-H. Chen, C.-T. Chiu, J.-C.
Chiou, C.-T. Chuang, W. Hwang, H.-M. Tong, K.-N. Chen, Novel Cu-to-Cu bonding With Ti
passivation at 180 °C in 3-D integration. IEEE Electron. Device Lett. 34, 1551–1553 (2013).
https://doi.org/10.1109/LED.2013.2285702