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80. G.W. Deptuch, G. Carini, P. Grybos, P. Kmon, P. Maj, M. Trimpl, D.P. Siddons, R. Szczygiel,
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65. C. Rauer, H. Moriceau, F. Fournel, A.M. Charvet, C. Morales, N. Rochat, L. Vandroux, F. Rieutord, T. McCormick, I. Radu, Treatments of deposited SiOx surfaces enabling low temperature
direct bonding. ECS J. Solid State Sci. Technol. 2, Q147–Q150 (2013). https://doi.org/10.1149/
2.004309jss
66. C. Ventosa, C. Morales, L. Libralesso, F. Fournel, A.M. Papon, D. Lafond, H. Moriceau, J.D.
Penot, F. Rieutord, Mechanism of thermal silicon oxide direct wafer bonding. Electrochem.
Solid-State Lett. 12, H373–H375 (2009). https://doi.org/10.1149/1.3193533
67. F. Fournel, C. Martin-Cocher, D. Radisson, V. Larrey, E. Beche, C. Morales, P.A. Delean, F.
Rieutord, H. Moriceau, Water stress corrosion in bonded structures. ECS J. Solid State Sci.
Technol. 4, P124–P130 (2015). https://doi.org/10.1149/2.0031505jss
68. P. Gondcharton, B. Imbert, L. Benaissa, M. Verdier, Voiding phenomena in copper-copper
bonded structures: role of creep. ECS J. Solid State Sci. Technol. 4, P77–P82 (2015). https://
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69. P. Gondcharton, B. Imbert, L. Benaissa, F. Fournel, M. Verdier, Effect of copper-copper direct
bonding on voiding in metal thin films. J. Electron. Mater. 44, 4128–4133 (2015). https://doi.
org/10.1007/s11664-015-3992-1
70. S. Lhostis, A. Farcy, E. Deloffre, F. Lorut, S. Mermoz, Y. Henrion, L. Berthier, F. Bailly, D.
Scevola, F. Guyader, F. Gigon, C. Besset, S. Pellissier, L. Gay, N. Hotellier, M. Arnoux, A.-L.
Le Berrigo, S. Moreau, V. Balan, F. Fournel, A. Jouve, S. Chéramy, B. Rebhan, G.A. Maier,
L. Chitu, Reliable 300 mm wafer level hybrid bonding for 3D stacked CMOS image sensors.
In 2016 IEEE 66th Electronic Components and Technology Conference (ECTC) (IEEE, 2016),
pp. 869–876
71. H. Takagi, J. Utsumi, M. Takahashi, R. Maeda, Room-temperature bonding of oxide wafers
by Ar-beam surface activation. ECS Trans. 16, 531–537 (2008). https://doi.org/10.1149/1.298
2908
72. F. Liu, R.R. Yu, A.M. Young, J.P. Doyle, X. Wang, L. Shi, K.N. Chen, X. Li, D.A. Dipaola,
D. Brown, C.T. Ryan, A 300-mm wafer-level three-dimensional integration scheme using
tungsten through-silicon via and hybrid Cu-adhesive bonding, in 2008 IEEE International
Electron Devices Meeting (IEEE, 2008), pp. 1–4
73. J.J. McMahon, E. Chan, S.H. Lee, R.J. Gutmann, J.Q. Lu, Bonding interfaces in wafer-level
metal/adhesive bonded 3D integration, in 2008 58th Electronic Components and Technology
Conference (IEEE, 2008), pp. 871–878
74. Hozawa K, Aoki M, Furuta F, Takeda K, Yanagisawa A, Kikuchi H, Mitsuhashi T,
Kobayashi H (2013) 3D Integration Technology using Hybrid Wafer Bonding and its Electrical
Characteristics. In: 13th Int. Symp. Electron. Packag. ICEP2013. Osaka, Japan, pp 118–122
75. J.J. McMahon, J.Q. Lu, R.J. Gutmann, Wafer bonding of damascene-patterned metal/adhesive
redistribution layers for via-first three-dimensional (3D) interconnect, in 55th Proceedings
Electronic Components and Technology, 2005. ECTC’05. (IEEE, 2005), pp. 331–336
76. Z.-C. Hsiao, C.-T. Ko, H.-H. Chang, H.-C. Fu, C.-W. Chiang, C.-K. Hsu, W.-W. Shen, W.-C.
Lo, Cu/BCB Hybrid Bonding With TSV for 3D Integration by Using Fly-Cutting Technology
(IEEE, Kyoto, Japan, 2015), pp. 834–837
77. T. Sakai, N. Imaizumi, S. Sakuyama, Hybrid bonding technology with Cu–Cu/adhesives for
high density 2.5D/3D integration. (IEEE, Big Island, HI, 2016), pp 1–6
78. R. He, T. Suga, Effects of Ar plasma and Ar fast atom bombardment (FAB) treatments on
Cu/polymer hybrid surface for wafer bonding, in 2014 International Conference on Electronics
Packaging (ICEP) (IEEE, 2014), pp. 78–81
79. C. Okoro, R. Agarwal, P. Limaye, B. Vandevelde, D. Vandepitte, E. Beyne, Insertion bonding:
a novel Cu-Cu bonding approach for 3D integration, in 2010 Proceedings 60th Electronic
Components and Technology Conference (ECTC) (IEEE, 2010), pp. 1370–1375
80. G.W. Deptuch, G. Carini, P. Grybos, P. Kmon, P. Maj, M. Trimpl, D.P. Siddons, R. Szczygiel,
R. Yarema, Design and tests of the vertically integrated photon imaging chip. IEEE Trans.
Nucl. Sci. 61, 663–674 (2014). https://doi.org/10.1109/TNS.2013.2294673
81. G.W. Deptuch, G. Carini, T. Collier, P. Grybo´ s, P. Kmon, R. Lipton, P. Maj, D.P. Siddons,
R. Szczygieł, R. Yarema, Results of tests of three-dimensionally integrated chips bonded to