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75. X. Zeng, X. Mao, R. Greif, R.E. Russo, Ultraviolet femtosecond and nanosecond laser ablation
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79. C.A. Sacchi, Laser-induced electric breakdown in water. J. Opt. Soc. Josa B 8(2), 337–345
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80. M.S. Amer, M.A. El-Ashry, L.R. Dosser, K.E. Hix, J.F. Maguire, I. Bryan, Femtosecond
versus nanosecond laser machining: comparison of induced stresses and structural changes
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81. A.T. Cheung, Dicing advanced materials for microelectronics, in International Symposium on
Advanced Packaging Materials: Processes, Properties, and Interfaces, pp. 149–152 (2005)
82. K.W. Shi, Y.B. Kar, H. Misran, Y.K. Yun, L.W. Yew, T.C. Hui, Optimization of wafer singulation process on copper/low-k materials for semiconductor device assembly. Aust. J. Basic
Appl. Sci. 8(22), 6–11 (2014)
83. S. Abdullah, S.M. Yusof, A. Jalar, M.F. Abdullah, Z.A. Aziz, R. Daud, Step cut for dicing
laminated wafer in a QFN package. Solid State Sci. Technol. 16(2), 198–206 (2008)
84. The Cutting Edge: Technical Newsletter, No. 5, Disco Corporation (2002)
85. I. Weisshaus, D. Shi, U. Efrat, Wafer dicing, in Solid State Technology: Insight for Electronics
Manufacturing
86. Z.Y. Zhang, F.W. Huo, Y. Wu, H. Huang, Grinding of silicon wafers using an ultrafine diamond
wheel of a hybrid bond material. Int. J. Mach. Tools Manuf 51(1), 18–24 (2011)
87. Z. Zhang, Y. Wu, D. Guo, H. Huang, Phase Transformation of single crystal silicon induced
by grinding with ultrafine diamond grits. Scripta Mater. 64(2), 177–180 (2011)
88. S. Malkin, C.S. Guo, Grinding Technology: Theory and Applications of Machining with
Abrasives, 2nd edn. (Industrial Press, New York, 2008)
89. H. Zhou, S. Qiu, Y. Huo, N. Zhang, High-speed dicing of silicon wafers conducted using
ultrathin blades. Int. J. Adv. Manuf. Technol. 66, 947–953 (2013)
90. P.J. Kim, Y.D. Ha, H.H. Park, J.H. Park, Development of die-bonder with multi and matrix
picker and placer to increase production capacity. Proc. World Cong. Eng. Comput. Sci. 1,
978–988 (2012)
91. Z. Liu, Reliable peeling of ultrathin die with multineedle ejector. IEEE Trans. Compon.
Packag. Manuf. Technol. 4(9), 2156–3950 (2014)
92. T.H. Cheng, C.C. Du, C.H. Tseng, Study in IC chip failure during pick-up process by using
experimental and finite element methods. J. Mater. Process. Technol. 172, 407–416 (2006)
93. N. Saiki, K. Inaba, K. Kishimoto, H. Seno, K. Ebe, Study on peeling behavior in pick-up
process of IC chip with adhesive tape. J. Solid Mech. Mater. Eng. 4(7), 1051–1060 (2010)
94. A. Eitan, K.-Y. Hung, Thermo-compression bonding for fine-pitch copper-pillar flip-chip
interconnect—tool features as enablers of unique technology, in Electronic Components and
Technology Conference, pp. 460–464 (2015)
95. D. Hiner, D.W. Kim, S.G. Ahn, K.S. Kim, H.K. Kim, M.J. Lee, D.B. Kang, M. Kelly, R.
Huemoeller, R. Radojcjc, S. Gu, Multi-die chip on wafer thermo-compression bonding using
non-conductive film, in Electronic Components and Technology Conference, pp. 17–21 (2015)
96. H. Pristauz, A. Attard, A. Mayr, Core capabilities of thermo compression bonding. Chip Scale
Rev. 21(6), 29 (2017)
H. Ma et al.
73. Y. Zhang, D.Y. Tzou, J.K. Chen, Micro- and nanoscale heat transfer in femtosecond laser
processing of metals. Comput. Phy. 1–45 (2015)
74. A. Okano, K. Takayanagi, Laser-induced fluorescence from collisionally excited si atoms in
laser ablation plume. J. Appl. Phys. 86, 3964–3972 (1999)
75. X. Zeng, X. Mao, R. Greif, R.E. Russo, Ultraviolet femtosecond and nanosecond laser ablation
of silicon: ablation efficiency and laser-induced plasma expansion. High-Power Laser Ablation
V 5448, 1–9 (2004)
76. C. Pasquini, J. Cortez, L.M.C. Silva, F.B. Gonzaga, Laser induced breakdown spectroscopy.
J. Braz. Chem. Soc. 18(3), 463–512 (2007)
77. L.J. Radziemski, D.A. Cremers, Handbook of Laser Induced Breakdown Spectroscopy (Wiley,
New York)
78. G.M. Weyl, Physics of laser-induced breakdown: an update, in Laser-Induced Plasmas and
Applications (Marcel Dekker, New York, 1989)
79. C.A. Sacchi, Laser-induced electric breakdown in water. J. Opt. Soc. Josa B 8(2), 337–345
(1991)
80. M.S. Amer, M.A. El-Ashry, L.R. Dosser, K.E. Hix, J.F. Maguire, I. Bryan, Femtosecond
versus nanosecond laser machining: comparison of induced stresses and structural changes
in silicon wafers. Appl. Surf. Sci. 242, 162–167 (2005)
81. A.T. Cheung, Dicing advanced materials for microelectronics, in International Symposium on
Advanced Packaging Materials: Processes, Properties, and Interfaces, pp. 149–152 (2005)
82. K.W. Shi, Y.B. Kar, H. Misran, Y.K. Yun, L.W. Yew, T.C. Hui, Optimization of wafer singulation process on copper/low-k materials for semiconductor device assembly. Aust. J. Basic
Appl. Sci. 8(22), 6–11 (2014)
83. S. Abdullah, S.M. Yusof, A. Jalar, M.F. Abdullah, Z.A. Aziz, R. Daud, Step cut for dicing
laminated wafer in a QFN package. Solid State Sci. Technol. 16(2), 198–206 (2008)
84. The Cutting Edge: Technical Newsletter, No. 5, Disco Corporation (2002)
85. I. Weisshaus, D. Shi, U. Efrat, Wafer dicing, in Solid State Technology: Insight for Electronics
Manufacturing
86. Z.Y. Zhang, F.W. Huo, Y. Wu, H. Huang, Grinding of silicon wafers using an ultrafine diamond
wheel of a hybrid bond material. Int. J. Mach. Tools Manuf 51(1), 18–24 (2011)
87. Z. Zhang, Y. Wu, D. Guo, H. Huang, Phase Transformation of single crystal silicon induced
by grinding with ultrafine diamond grits. Scripta Mater. 64(2), 177–180 (2011)
88. S. Malkin, C.S. Guo, Grinding Technology: Theory and Applications of Machining with
Abrasives, 2nd edn. (Industrial Press, New York, 2008)
89. H. Zhou, S. Qiu, Y. Huo, N. Zhang, High-speed dicing of silicon wafers conducted using
ultrathin blades. Int. J. Adv. Manuf. Technol. 66, 947–953 (2013)
90. P.J. Kim, Y.D. Ha, H.H. Park, J.H. Park, Development of die-bonder with multi and matrix
picker and placer to increase production capacity. Proc. World Cong. Eng. Comput. Sci. 1,
978–988 (2012)
91. Z. Liu, Reliable peeling of ultrathin die with multineedle ejector. IEEE Trans. Compon.
Packag. Manuf. Technol. 4(9), 2156–3950 (2014)
92. T.H. Cheng, C.C. Du, C.H. Tseng, Study in IC chip failure during pick-up process by using
experimental and finite element methods. J. Mater. Process. Technol. 172, 407–416 (2006)
93. N. Saiki, K. Inaba, K. Kishimoto, H. Seno, K. Ebe, Study on peeling behavior in pick-up
process of IC chip with adhesive tape. J. Solid Mech. Mater. Eng. 4(7), 1051–1060 (2010)
94. A. Eitan, K.-Y. Hung, Thermo-compression bonding for fine-pitch copper-pillar flip-chip
interconnect—tool features as enablers of unique technology, in Electronic Components and
Technology Conference, pp. 460–464 (2015)
95. D. Hiner, D.W. Kim, S.G. Ahn, K.S. Kim, H.K. Kim, M.J. Lee, D.B. Kang, M. Kelly, R.
Huemoeller, R. Radojcjc, S. Gu, Multi-die chip on wafer thermo-compression bonding using
non-conductive film, in Electronic Components and Technology Conference, pp. 17–21 (2015)
96. H. Pristauz, A. Attard, A. Mayr, Core capabilities of thermo compression bonding. Chip Scale
Rev. 21(6), 29 (2017)