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P. Kumar et al.
29. A.S. Budiman, H.-A.-S. Shin, B.-J. Kim, B.-J. Kim, S.-H. Hwang, H.-Y. Son, M.-S. Suh, Q.-H.
Chung, K.-Y. Byun, N. Tamura, M. Kunz, Y.-C. Joo, Measurement of stresses in Cu and Si
around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated
circuits. Microelectron. Reliab. 52, 530–533 (2012)
30. T. Tian, Shin H. Morusupalli, H.-Y. Son, K.-Y. Byun, Y.-C. Joo, R. Caramto, L. Smith, Y.-L.
Shen, M. Kunz, N. Tamura, A.S. Budiman, On the mechanical stresses of Cu through-silicon
via (TSV) samples fabricated by SK Hynix vs. SEMATECH Enabling robust and reliable 3-D
interconnect/integrated circuit (IC) technology. Procedia Eng. 139, 101–111 (2016)
31. L.E. Levine, C. Okoro, R. Xu, Full elastic strain and stress tensor measurements from individual
dislocation cells in copper through-Si vias. IUCrJ 2, 635–642 (2015)
32. J.M.E. Harper, C. Cabral Jr., P.C. Andricacos, L. Gignac, I.C. Noyan, K.P. Rodbell, C.K.
Hu, Mechanisms for microstructure evolution in electroplated copper thin films near room
temperature. J. Appl. Phys. 86, 2516–2525 (1999)
33. L.W. Kong, J.R. LIoyd, K.B. Yeap, E. Zschech, A. Rudack, M. Liehr, A. Diebold, Applying
x-ray microscopy and finite element modeling to identify the mechanism of stress-assisted void
growth in through-silicon vias. J. Appl. Phys. 110, 053502 (2011)
34. I. De Wolf, K. Croes, O. Varela Pedreira, R. Labie, A. Redolfi, M. Van De Peer, K. Vanstreels,
C. Okoro, B. Vandevelde, E. Beyne, Cu pumping in TSVs: effect of pre-CMP thermal budget.
Microelectron. Reliab. 51, 1856–1859 (2011)
35. C. McDonough, B. Backes, W. Wang, R. Caramto, R.E. Gree, Thermal and spatial dependence
of TSV-induced stress in Si, in Interconnect Technology Conference and 2011 Materials for
Advanced Metallization (IITC/MAM) (Dresden, May 2011)
36. C. Okoro, L.E. Levine, R. Xu, Y.S. Obeng, Experimentally, how does Cu TSV diameter
influence its stress state? in Electronic Components and Technology Conference, IEEE, p. 54
(2015)
37. K. Athikulwongse, A. Chakraborty, J.S. Yang, D.Z. Pan, S.K. Lim, Stress-driven 3D-IC
placement with TSV keep-out zone and regularity study, in International Conference on
Computer-Aided Design (ICCAD) (San Jose, CA, November 2010), IEEE/ACM, p. 669
38. P.S. Ho, S.K. Ryu, K.H. Lu, Q. Zhao, J. Im, R. Huang, Reliability challenges for 3D interconnects: a material and design perspective. Presentation at the 3D Sematech Workshop
(Burlingame, 17, March 2011)
39. T. Jiang, S.K. Ryu, J. Im, H.Y. Son, N.S. Kim, R. Huang, P.S. Ho, Impact of material and
microstructure on thermal stresses and reliability of through-silicon via (TSV) structures, in
IITC: IEEE International Interconnect Technology Conference (Kyoto, June 2013)
40. E.J. Cheng, Y.L. Shen, Thermal expansion behavior of through-silicon-via structures in threedimensional microelectronic packaging. Microelectron. Reliab. 52, 534–540 (2012)
41. X. Liu, Q. Chen, V. Sundaram, M. Simmons-Matthews, K.P. Wachtler, R.R. Tummla, S.K.
Sitaraman, Thermo-mechanical behavior of through silicon vias in a 3D integrated package
with inter-chip microbumps, in Electronic Components and Technology Conference, IEEE,
p. 1190 (2011)
42. C. Okoro, J.W. La, F. Golshany, K. Hummler, Y.S. Obeng, A detailed failure analysis examination of the effect of thermal cycling on Cu TSV reliability. IEEE Trans. Electron. Dev. 61,
15–22 (2014)
43. S.-H. Hwang, B.-J. Kim, H.-Y. Lee, Y.-C. Joo, Electrical and mechanical properties of throughsilicon vias and bonding layers in stacked wafers for 3D integrated circuits. J. Electron. Mater.
41, 232–240 (2012)
44. H.-A.-S. Shin, B.-J. Kim, J.-H. Kim, S.-H. Hwang, A.S. Budiman, H.-Y. Son, K.-Y. Byun, N.
Tamura, M. Kunz, D.-I. Kim, Y.-C. Joo, Microstructure evolution and defect formation in Cu
through-silicon vias (TSVs) during thermal annealing. J. Electron. Mater. 41, 712–719 (2012)
45. Z. Wu, Z. Huang, Y. Ma, H. Xiong, P.P. Conway, Effects of the microstructure of copper
through-silicon vias on their thermally induced linear elastic mechanical behavior. Electron.
Mater. Lett. 10, 281–292 (2014)
P. Kumar et al.
29. A.S. Budiman, H.-A.-S. Shin, B.-J. Kim, B.-J. Kim, S.-H. Hwang, H.-Y. Son, M.-S. Suh, Q.-H.
Chung, K.-Y. Byun, N. Tamura, M. Kunz, Y.-C. Joo, Measurement of stresses in Cu and Si
around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated
circuits. Microelectron. Reliab. 52, 530–533 (2012)
30. T. Tian, Shin H. Morusupalli, H.-Y. Son, K.-Y. Byun, Y.-C. Joo, R. Caramto, L. Smith, Y.-L.
Shen, M. Kunz, N. Tamura, A.S. Budiman, On the mechanical stresses of Cu through-silicon
via (TSV) samples fabricated by SK Hynix vs. SEMATECH Enabling robust and reliable 3-D
interconnect/integrated circuit (IC) technology. Procedia Eng. 139, 101–111 (2016)
31. L.E. Levine, C. Okoro, R. Xu, Full elastic strain and stress tensor measurements from individual
dislocation cells in copper through-Si vias. IUCrJ 2, 635–642 (2015)
32. J.M.E. Harper, C. Cabral Jr., P.C. Andricacos, L. Gignac, I.C. Noyan, K.P. Rodbell, C.K.
Hu, Mechanisms for microstructure evolution in electroplated copper thin films near room
temperature. J. Appl. Phys. 86, 2516–2525 (1999)
33. L.W. Kong, J.R. LIoyd, K.B. Yeap, E. Zschech, A. Rudack, M. Liehr, A. Diebold, Applying
x-ray microscopy and finite element modeling to identify the mechanism of stress-assisted void
growth in through-silicon vias. J. Appl. Phys. 110, 053502 (2011)
34. I. De Wolf, K. Croes, O. Varela Pedreira, R. Labie, A. Redolfi, M. Van De Peer, K. Vanstreels,
C. Okoro, B. Vandevelde, E. Beyne, Cu pumping in TSVs: effect of pre-CMP thermal budget.
Microelectron. Reliab. 51, 1856–1859 (2011)
35. C. McDonough, B. Backes, W. Wang, R. Caramto, R.E. Gree, Thermal and spatial dependence
of TSV-induced stress in Si, in Interconnect Technology Conference and 2011 Materials for
Advanced Metallization (IITC/MAM) (Dresden, May 2011)
36. C. Okoro, L.E. Levine, R. Xu, Y.S. Obeng, Experimentally, how does Cu TSV diameter
influence its stress state? in Electronic Components and Technology Conference, IEEE, p. 54
(2015)
37. K. Athikulwongse, A. Chakraborty, J.S. Yang, D.Z. Pan, S.K. Lim, Stress-driven 3D-IC
placement with TSV keep-out zone and regularity study, in International Conference on
Computer-Aided Design (ICCAD) (San Jose, CA, November 2010), IEEE/ACM, p. 669
38. P.S. Ho, S.K. Ryu, K.H. Lu, Q. Zhao, J. Im, R. Huang, Reliability challenges for 3D interconnects: a material and design perspective. Presentation at the 3D Sematech Workshop
(Burlingame, 17, March 2011)
39. T. Jiang, S.K. Ryu, J. Im, H.Y. Son, N.S. Kim, R. Huang, P.S. Ho, Impact of material and
microstructure on thermal stresses and reliability of through-silicon via (TSV) structures, in
IITC: IEEE International Interconnect Technology Conference (Kyoto, June 2013)
40. E.J. Cheng, Y.L. Shen, Thermal expansion behavior of through-silicon-via structures in threedimensional microelectronic packaging. Microelectron. Reliab. 52, 534–540 (2012)
41. X. Liu, Q. Chen, V. Sundaram, M. Simmons-Matthews, K.P. Wachtler, R.R. Tummla, S.K.
Sitaraman, Thermo-mechanical behavior of through silicon vias in a 3D integrated package
with inter-chip microbumps, in Electronic Components and Technology Conference, IEEE,
p. 1190 (2011)
42. C. Okoro, J.W. La, F. Golshany, K. Hummler, Y.S. Obeng, A detailed failure analysis examination of the effect of thermal cycling on Cu TSV reliability. IEEE Trans. Electron. Dev. 61,
15–22 (2014)
43. S.-H. Hwang, B.-J. Kim, H.-Y. Lee, Y.-C. Joo, Electrical and mechanical properties of throughsilicon vias and bonding layers in stacked wafers for 3D integrated circuits. J. Electron. Mater.
41, 232–240 (2012)
44. H.-A.-S. Shin, B.-J. Kim, J.-H. Kim, S.-H. Hwang, A.S. Budiman, H.-Y. Son, K.-Y. Byun, N.
Tamura, M. Kunz, D.-I. Kim, Y.-C. Joo, Microstructure evolution and defect formation in Cu
through-silicon vias (TSVs) during thermal annealing. J. Electron. Mater. 41, 712–719 (2012)
45. Z. Wu, Z. Huang, Y. Ma, H. Xiong, P.P. Conway, Effects of the microstructure of copper
through-silicon vias on their thermally induced linear elastic mechanical behavior. Electron.
Mater. Lett. 10, 281–292 (2014)