4 Microstructure and Mechanical Reliability Issues of TSV
101
12. H. Xiong, Z. Huang, P. Conway, A method for quantification of the effects of size and geometry
on the microstructure of miniature interconnects. J. Electron. Mater. 43, 618–629 (2014)
13. M. Krause, et al., Characterization and failure analysis of TSV interconnects: from nondestructive defect localization to material analysis with nanometer resolution, in Electronic
Components and Technology Conference, IEEE, p. 1452 (2011)
14. A. Heryanto, W.N. Putra, A. Trigg, S. Gao, W.S. Kwon, F.X. Che, X.F. Ang, J. Wei, R.I.
Made, C.L. Gan, K.L. Pey, Effect of copper TSV annealing on via protrusion for TSV Wafer
Fabrication. J. Electron. Mater. 41, 2533–2542 (2012)
15. C. Okoro, R. Labie, K. Vanstreels, A. Franquet, M. Gonzalez, B. Vandevelde, E. Beyne, D.
Vandepitte, B. Verlinden, Impact of the electrodeposition chemistry used for TSV filling on the
microstructural and thermo-mechanical response of Cu. J. Mater. Sci. 46, 3868–3882 (2011)
16. X. Feng, T. Huang, M. Li, The influence of annealing on characteristics of copper in TSV. ECS
J. Solid State Sci. Technol. 4, P451–P455 (2015)
17. K.J. Ganesh, A.D. Darbal, S. Rajasekhara, G.S. Rohrer, K. Barmak, P.J. Ferreira, Effect of
downscaling nano-copper interconnects on the microstructure revealed by high resolution
TEM-orientation-mapping. Nanotechnology 23, 135702 (2012)
18. M. Faheem, R.R. Giridharan, Y. Liang, P. van Der Heide, Micro-XRD characterization of a
single copper filled through-silicon via. Mater. Lett. 161, 391–394 (2015)
19. G.G. Stoney, The tension of metallic films deposited by electrolysis. Proc. R. Soc. Lond. A 82,
172–175 (1909)
20. T. Jiang, S.-K. Ryu, Q. Zhao, J. Im, R. Huang, P.S. Ho, Measurement and analysis of thermal
stresses in 3D integrated structures containing through-silicon-vias. Microelectron. Reliab. 53,
53–62 (2013)
21. S.K. Ryu, T. Jiang, K.H. Lu, J. Im, H.-Y. Son, K.-Y. Byun, R. Huang, P.S. Ho, Characterization
of thermal stresses in through-silicon vias for three-dimensional interconnects by bending beam
technique. Appl. Phys. Lett. 100, 041901 (2012)
22. K.H. Lu, S.K. Ryu, Q. Zhao, K. Hummler, J. Im, R. Huang, P.S. Ho, Temperature-dependent
thermal stress determination for through-silicon-vias (TSVs) by combining bending beam
technique with finite element analysis, in Electronic Components and Technology Conference,
IEEE, p. 1475 (2011)
23. Q. Zhao, J. Im, R. Huang, P.S. Ho, Extension of micro-Raman spectroscopy for fullcomponent stress characterization of TSV structures, in Electronic Components and Technology
Conference, IEEE, p. 397 (2013)
24. A.D. Trigg, L.H. Yu, C.K. Cheng, R. Kumar, D.L. Kwong, T. Ueda, T. Ishigaki, K. Kang,
W.S. Yoo, Three dimensional stress mapping of silicon surrounded by copper filled through
silicon vias using polychromator-based multi-wavelength micro Raman spectroscopy. Appl.
Phys. Exp. 3, 086601 (2010)
25. I. De Wolf, V. Simons, V. Cherman, R. Labie, B. Vandevelde, E. Beyne, In-depth Raman
spectroscopy analysis of various parameters affecting the mechanical stress near the surface
and bulk of Cu-TSVs, in Electronic Components and Technology Conference, IEEE, p. 331
(2012)
26. M. Song, K.R. Mundboth, J.A. Szpunar, L. Chen, R. Feng, Characterization of local strain/stress
in copper through-silicon via structures using synchrotron x-ray microdiffraction, electron
backscattered diffraction and nonlinear thermomechanical model. J. Micromech. Microeng.
25, 085002 (2015)
27. C. Okoro, L.E. Levine, R. Xu, K. Hummler, Y. Obeng, X-ray micro-beam diffraction measurement of the effect of thermal cycling on stress in Cu TSV: a comparative study, in Electronic
Components and Technology Conference, IEEE, p. 1648 (2014)
28. V.H. Vartanian, R.A. Allen, L. Smith, K. Hummler, S. Olson, B.C. Sapp, Metrology needs for
through-silicon via fabrication. J. Micro/Nanolith MEMS MOEMS 13, 011206 (2014)
101
12. H. Xiong, Z. Huang, P. Conway, A method for quantification of the effects of size and geometry
on the microstructure of miniature interconnects. J. Electron. Mater. 43, 618–629 (2014)
13. M. Krause, et al., Characterization and failure analysis of TSV interconnects: from nondestructive defect localization to material analysis with nanometer resolution, in Electronic
Components and Technology Conference, IEEE, p. 1452 (2011)
14. A. Heryanto, W.N. Putra, A. Trigg, S. Gao, W.S. Kwon, F.X. Che, X.F. Ang, J. Wei, R.I.
Made, C.L. Gan, K.L. Pey, Effect of copper TSV annealing on via protrusion for TSV Wafer
Fabrication. J. Electron. Mater. 41, 2533–2542 (2012)
15. C. Okoro, R. Labie, K. Vanstreels, A. Franquet, M. Gonzalez, B. Vandevelde, E. Beyne, D.
Vandepitte, B. Verlinden, Impact of the electrodeposition chemistry used for TSV filling on the
microstructural and thermo-mechanical response of Cu. J. Mater. Sci. 46, 3868–3882 (2011)
16. X. Feng, T. Huang, M. Li, The influence of annealing on characteristics of copper in TSV. ECS
J. Solid State Sci. Technol. 4, P451–P455 (2015)
17. K.J. Ganesh, A.D. Darbal, S. Rajasekhara, G.S. Rohrer, K. Barmak, P.J. Ferreira, Effect of
downscaling nano-copper interconnects on the microstructure revealed by high resolution
TEM-orientation-mapping. Nanotechnology 23, 135702 (2012)
18. M. Faheem, R.R. Giridharan, Y. Liang, P. van Der Heide, Micro-XRD characterization of a
single copper filled through-silicon via. Mater. Lett. 161, 391–394 (2015)
19. G.G. Stoney, The tension of metallic films deposited by electrolysis. Proc. R. Soc. Lond. A 82,
172–175 (1909)
20. T. Jiang, S.-K. Ryu, Q. Zhao, J. Im, R. Huang, P.S. Ho, Measurement and analysis of thermal
stresses in 3D integrated structures containing through-silicon-vias. Microelectron. Reliab. 53,
53–62 (2013)
21. S.K. Ryu, T. Jiang, K.H. Lu, J. Im, H.-Y. Son, K.-Y. Byun, R. Huang, P.S. Ho, Characterization
of thermal stresses in through-silicon vias for three-dimensional interconnects by bending beam
technique. Appl. Phys. Lett. 100, 041901 (2012)
22. K.H. Lu, S.K. Ryu, Q. Zhao, K. Hummler, J. Im, R. Huang, P.S. Ho, Temperature-dependent
thermal stress determination for through-silicon-vias (TSVs) by combining bending beam
technique with finite element analysis, in Electronic Components and Technology Conference,
IEEE, p. 1475 (2011)
23. Q. Zhao, J. Im, R. Huang, P.S. Ho, Extension of micro-Raman spectroscopy for fullcomponent stress characterization of TSV structures, in Electronic Components and Technology
Conference, IEEE, p. 397 (2013)
24. A.D. Trigg, L.H. Yu, C.K. Cheng, R. Kumar, D.L. Kwong, T. Ueda, T. Ishigaki, K. Kang,
W.S. Yoo, Three dimensional stress mapping of silicon surrounded by copper filled through
silicon vias using polychromator-based multi-wavelength micro Raman spectroscopy. Appl.
Phys. Exp. 3, 086601 (2010)
25. I. De Wolf, V. Simons, V. Cherman, R. Labie, B. Vandevelde, E. Beyne, In-depth Raman
spectroscopy analysis of various parameters affecting the mechanical stress near the surface
and bulk of Cu-TSVs, in Electronic Components and Technology Conference, IEEE, p. 331
(2012)
26. M. Song, K.R. Mundboth, J.A. Szpunar, L. Chen, R. Feng, Characterization of local strain/stress
in copper through-silicon via structures using synchrotron x-ray microdiffraction, electron
backscattered diffraction and nonlinear thermomechanical model. J. Micromech. Microeng.
25, 085002 (2015)
27. C. Okoro, L.E. Levine, R. Xu, K. Hummler, Y. Obeng, X-ray micro-beam diffraction measurement of the effect of thermal cycling on stress in Cu TSV: a comparative study, in Electronic
Components and Technology Conference, IEEE, p. 1648 (2014)
28. V.H. Vartanian, R.A. Allen, L. Smith, K. Hummler, S. Olson, B.C. Sapp, Metrology needs for
through-silicon via fabrication. J. Micro/Nanolith MEMS MOEMS 13, 011206 (2014)