4 Microstructure and Mechanical Reliability Issues of TSV
103
46. N. Nabiollahi, N. Moelans, M. Gonzalez, J. De Messemaeker, C.J. Wilson, K. Croes, E. Beyne, I.
De Wolf, Microstructure simulation of grain growth in Cu through silicon vias using phase-field
modeling. Microelectron. Reliab. 55, 765–770 (2015)
47. T. Jiang, C. Wu, J. Im, R. Huang, P.S. Ho, Effect of microstructure on via extrusion profile
and reliability implication for copper through-silicon vias (TSVs) structures, in IITC/AMC:
International Interconnect Technology Conference/Advanced Metallization Conference, IEEE
(San Jose, CA, May 2014), p. 377
48. H.D. Merchant, Thermal response of electrodeposited copper. J. Electron. Mater. 24, 919–925
(1995)
49. P. Bayat, D. Vogel, R.D. Rodriguez, E. Sheremet, D.R.T. Zahn, S. Rzepka, B. Michel, Thermomechanical characterization of copper through-silicon vias (Cu-TSVs) using micro-Raman
spectroscopy and atomic force microscopy. Microelectron. Eng. 137, 101–104 (2015)
50. D. Smith, S. Singh, Y. Ramnath, M. Rabie, D. Zhang, L. England, TSV residual Cu step
height analysis by white light interferometry for 3D integration, in Electronic Components and
Technology Conference, IEEE, p. 578 (2015)
51. C. Okoro, C. Huyghebaert, J. Van Olmen, R. Labie, K. Lambrinou, B. Vandevelde, E. Beyne,
Van- depitte D, Elimination of the axial deformation problem of Cu TSV in 3D integration.
AIP Conf. Proc. 1300, 214 (2010)
52. I. Dutta, P. Kumar, M.S. Bakir, Interface-related reliability challenges in 3-D interconnect
systems with through-silicon vias. JOM 63, 70–77 (2011)
53. P. Kumar, I. Dutta, M.S. Bakir, Interfacial effects during thermal cycling of Cu-filled throughsilicon vias (TSV). J. Electron. Mater. 41, 322–335 (2012)
54. L. Meinshausen, M. Liu, T.K. Lee, I. Dutta, L. Li, Reliability implications of thermomechanically and electrically induced interfacial sliding of through-silicon vias in 3D packages, in ASME 2015 International Technical Conference and Exhibition on Packaging and
Integration of Electronic and Photonic Microsystems (San Francisco, CA, July 2015)
55. J. De Messemaeker, O.V. Pereira, H. Philipsen, E. Beyne, I. De Wolf, T. Van der Donck, K.
Croes, Correlation between Cu microstructure and TSV Cu pumping, in Electronic Components
and Technology Conference, IEEE, p. 613 (2014)
56. J. De Messemaeker, O.V. Pereira, B. Vandevelde, H. Philipsen, I. De Wolf, E. Beyne, K. Croes,
Impact of post-plating anneal and through-silicon via dimensions on Cu pumping, in Electronic
Components and Technology Conference, IEEE, p. 586 (2013)
57. P. Kumar, I. Dutta, Influence of electric current on diffusionally accommodated sliding at
hetero-interfaces. Acta Mater. 59, 2096–2108 (2011)
58. P. Kumar, I. Dutta, Effect of substrate surface on electromigration-induced sliding at heterointerfaces. J. Phys. D 46, 155303 (2013)
59. K.A. Peterson, I. Dutta, M.W. Chen, Diffusionally accommodated interfacial sliding in metalsilicon systems. Acta Mater. 51, 2831–2846 (2003)
60. H. Yang, T.K. Lee, L. Meinshausen, I. Dutta, J. Electronic. Mater. 48, 159–169 (2019)
61. Y.C. Tan, C.M. Tan, X.W. Zhang, T.C. Chai, D.Q. Yu, Electromigration performance of through
silicon via (TSV)—a modeling approach. Microelectron. Reliab. 50, 1336–1340 (2010)
62. T. Frank, S. Moreau, C. Chappaz, L. Arnaud, P. Leduc, A. Thuaire, L. Anghel, Electromigration
behavior of 3D-IC TSV interconnects, in Electronic Components and Technology Conference,
IEEE, p. 326 (2012)
63. T. Frank, S. Moreau, C. Chappaz, P. Leduc, L. Arnaud, A. Thuaire, E. Chery, F. Lorut, L.
Anghel, G. Poupon, Reliability of TSV interconnects: electromigration, thermal cycling, and
impact on above metal level dielectric. Microelectron. Reliab. 53, 17–29 (2013)
64. H.J. Choi, S.M. Choi, M.S. Yeo, S.D. Cho, D.C. Baek, J. Park, An experimental study on the
TSV reliability: electromigration (EM) and time dependant dielectric breakdown (TDDB), in
IITC: IEEE International Interconnect Technology Conference. San Jose, CA (June, 2012)
65. T.K. Lee, I. Dutta, Unpublished Research
103
46. N. Nabiollahi, N. Moelans, M. Gonzalez, J. De Messemaeker, C.J. Wilson, K. Croes, E. Beyne, I.
De Wolf, Microstructure simulation of grain growth in Cu through silicon vias using phase-field
modeling. Microelectron. Reliab. 55, 765–770 (2015)
47. T. Jiang, C. Wu, J. Im, R. Huang, P.S. Ho, Effect of microstructure on via extrusion profile
and reliability implication for copper through-silicon vias (TSVs) structures, in IITC/AMC:
International Interconnect Technology Conference/Advanced Metallization Conference, IEEE
(San Jose, CA, May 2014), p. 377
48. H.D. Merchant, Thermal response of electrodeposited copper. J. Electron. Mater. 24, 919–925
(1995)
49. P. Bayat, D. Vogel, R.D. Rodriguez, E. Sheremet, D.R.T. Zahn, S. Rzepka, B. Michel, Thermomechanical characterization of copper through-silicon vias (Cu-TSVs) using micro-Raman
spectroscopy and atomic force microscopy. Microelectron. Eng. 137, 101–104 (2015)
50. D. Smith, S. Singh, Y. Ramnath, M. Rabie, D. Zhang, L. England, TSV residual Cu step
height analysis by white light interferometry for 3D integration, in Electronic Components and
Technology Conference, IEEE, p. 578 (2015)
51. C. Okoro, C. Huyghebaert, J. Van Olmen, R. Labie, K. Lambrinou, B. Vandevelde, E. Beyne,
Van- depitte D, Elimination of the axial deformation problem of Cu TSV in 3D integration.
AIP Conf. Proc. 1300, 214 (2010)
52. I. Dutta, P. Kumar, M.S. Bakir, Interface-related reliability challenges in 3-D interconnect
systems with through-silicon vias. JOM 63, 70–77 (2011)
53. P. Kumar, I. Dutta, M.S. Bakir, Interfacial effects during thermal cycling of Cu-filled throughsilicon vias (TSV). J. Electron. Mater. 41, 322–335 (2012)
54. L. Meinshausen, M. Liu, T.K. Lee, I. Dutta, L. Li, Reliability implications of thermomechanically and electrically induced interfacial sliding of through-silicon vias in 3D packages, in ASME 2015 International Technical Conference and Exhibition on Packaging and
Integration of Electronic and Photonic Microsystems (San Francisco, CA, July 2015)
55. J. De Messemaeker, O.V. Pereira, H. Philipsen, E. Beyne, I. De Wolf, T. Van der Donck, K.
Croes, Correlation between Cu microstructure and TSV Cu pumping, in Electronic Components
and Technology Conference, IEEE, p. 613 (2014)
56. J. De Messemaeker, O.V. Pereira, B. Vandevelde, H. Philipsen, I. De Wolf, E. Beyne, K. Croes,
Impact of post-plating anneal and through-silicon via dimensions on Cu pumping, in Electronic
Components and Technology Conference, IEEE, p. 586 (2013)
57. P. Kumar, I. Dutta, Influence of electric current on diffusionally accommodated sliding at
hetero-interfaces. Acta Mater. 59, 2096–2108 (2011)
58. P. Kumar, I. Dutta, Effect of substrate surface on electromigration-induced sliding at heterointerfaces. J. Phys. D 46, 155303 (2013)
59. K.A. Peterson, I. Dutta, M.W. Chen, Diffusionally accommodated interfacial sliding in metalsilicon systems. Acta Mater. 51, 2831–2846 (2003)
60. H. Yang, T.K. Lee, L. Meinshausen, I. Dutta, J. Electronic. Mater. 48, 159–169 (2019)
61. Y.C. Tan, C.M. Tan, X.W. Zhang, T.C. Chai, D.Q. Yu, Electromigration performance of through
silicon via (TSV)—a modeling approach. Microelectron. Reliab. 50, 1336–1340 (2010)
62. T. Frank, S. Moreau, C. Chappaz, L. Arnaud, P. Leduc, A. Thuaire, L. Anghel, Electromigration
behavior of 3D-IC TSV interconnects, in Electronic Components and Technology Conference,
IEEE, p. 326 (2012)
63. T. Frank, S. Moreau, C. Chappaz, P. Leduc, L. Arnaud, A. Thuaire, E. Chery, F. Lorut, L.
Anghel, G. Poupon, Reliability of TSV interconnects: electromigration, thermal cycling, and
impact on above metal level dielectric. Microelectron. Reliab. 53, 17–29 (2013)
64. H.J. Choi, S.M. Choi, M.S. Yeo, S.D. Cho, D.C. Baek, J. Park, An experimental study on the
TSV reliability: electromigration (EM) and time dependant dielectric breakdown (TDDB), in
IITC: IEEE International Interconnect Technology Conference. San Jose, CA (June, 2012)
65. T.K. Lee, I. Dutta, Unpublished Research