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6. M. Hu et al., Dot-product engine for neuromorphic computing: Programming 1T1M
crossbar to accelerate matrix-vector multiplication, in 2016 53nd ACM/EDAC/IEEE Design
Automation Conference (DAC), pp. 1–6 (2016)
7. B. Govoreanu et al., 10 × 10 nm 2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation, in 2011 International Electron Devices Meeting,
pp. 31.6.1–31.6.4 (2011)
8. L. Kai-Shin et al., Utilizing sub-5 nm sidewall electrode technology for atomic-scale resistive
memory fabrication, in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of
Technical Papers, pp. 1–2 (2014)
9. M.J. Kim et al., Low power operating bipolar TMO ReRAM for sub 10 nm era, in 2010
International Electron Devices Meeting, pp. 19.3.1–19.3.4 (2010)
10. H.Y. Lee et al., Low power and high speed bipolar switching with a thin reactive Ti buffer
layer in robust HfO 2 based RRAM, in 2008 IEEE International Electron Devices Meeting,
pp. 1–4 (2008)
11. M.-J. Lee et al., A fast, high-endurance and scalable non-volatile memory device made
from asymmetric Ta 2 O 5 − x/TaO 2 − x bilayer structures. Nature Mater. 10(8), 625–630,
2011/08/01 (2011)
12. D.J.J. Loy, P.A. Dananjaya, X.L. Hong, D.P. Shum, W.S. Lew, Conduction mechanisms
on high retention annealed MgO-based resistive switching memory devices. Sci. Rep. 8(1),
p. 14774, 2018/10/03 (2018)
13. C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, C. Hu, T.-Y. Tseng, Bistable resistive switching in Al 2 O 3
memory thin films. J. Electrochem. Soc. 154(9), G189–G192 (2007)
14. Y. Wu, S. Yu, B. Lee, P. Wong, Low-power TiN/Al 2 O 3 /Pt resistive switching device with sub20 μA switching current and gradual resistance modulation. J. Appl. Phys. 110(9), 094104
(2011)
15. B. Sarkar, B. Lee, V. Misra, Understanding the gradual reset in Pt/Al2O3/Ni RRAM for
synaptic applications, Semicond. Sci. Technol. 30(10), 105014, 2015/08/24 (2015)
16. Y. Wu, Y. Chai, H.-Y. Chen, S. Yu, H.-S.P. Wong, Resistive switching AlO x -based memory
with CNT electrode for ultra-low switching current and high density memory application, in
2011 Symposium on VLSI Technology-Digest of Technical Papers, pp. 26–27: IEEE (2011)
17. Y. Wu et al., AlO x -based resistive switching device with gradual resistance modulation for
neuromorphic device application, in 2012 4th IEEE International Memory Workshop, pp. 1–4:
IEEE (2012)
18. K. Park, J.-S. Lee, Reliable resistive switching memory based on oxygen-vacancy-controlled
bilayer structures, RSC Advances. https://doi.org/10.1039/c6ra00798h 6(26), 21736–21741
(2016)
19. L. Goux et al., Understanding of the intrinsic characteristics and memory trade-offs of subμA filamentary RRAM operation, in 2013 Symposium on VLSI Technology, pp. T162–T163:
IEEE (2013)
20. G.C. Adam, B.D. Hoskins, M. Prezioso, F. Merrikh-Bayat, B. Chakrabarti, D.B. Strukov,
3-D memristor crossbars for analog and neuromorphic computing applications. IEEE Trans.
Electron Devices 64(1), 312–318 (2016)
21. W. Banerjee, X. Xu, H. Lv, Q. Liu, S. Long, M. Liu, Variability improvement of tio x/Al 2 O 3
bilayer nonvolatile resistive switching devices by interfacial band engineering with an ultrathin
Al 2 O 3 dielectric material. ACS Omega 2(10), 6888–6895 (2017)
22. K.-C. Chuang et al., Impact of the stacking order of HfOx and AlOx dielectric films on RRAM
switching mechanisms to behave digital resistive switching and synaptic characteristics. IEEE
J. Electr. Dev. Soc. 7, 589–595 (2019)
23. Goux et al., Asymmetry and switching phenomenology in TiN\(Al 2 O 3 )\HfO 2 \Hf systems.
ECS Solid State Lett. 1(4), P63–P65 (2012)
24. W. Song et al., Analog switching characteristics in TiW/Al 2 O 3 /Ta 2 O 5 /Ta RRAM devices.
Appl. Phys. Lett. 115(13), 133501 (2019)
25. J. Woo et al., Improved synaptic behavior under identical pulses using AlO x/HfO 2 bilayer
RRAM array for neuromorphic systems. IEEE Electr. Dev. Lett. 37(8), 994–997 (2016)
P. A. Dananjaya et al.
6. M. Hu et al., Dot-product engine for neuromorphic computing: Programming 1T1M
crossbar to accelerate matrix-vector multiplication, in 2016 53nd ACM/EDAC/IEEE Design
Automation Conference (DAC), pp. 1–6 (2016)
7. B. Govoreanu et al., 10 × 10 nm 2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation, in 2011 International Electron Devices Meeting,
pp. 31.6.1–31.6.4 (2011)
8. L. Kai-Shin et al., Utilizing sub-5 nm sidewall electrode technology for atomic-scale resistive
memory fabrication, in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of
Technical Papers, pp. 1–2 (2014)
9. M.J. Kim et al., Low power operating bipolar TMO ReRAM for sub 10 nm era, in 2010
International Electron Devices Meeting, pp. 19.3.1–19.3.4 (2010)
10. H.Y. Lee et al., Low power and high speed bipolar switching with a thin reactive Ti buffer
layer in robust HfO 2 based RRAM, in 2008 IEEE International Electron Devices Meeting,
pp. 1–4 (2008)
11. M.-J. Lee et al., A fast, high-endurance and scalable non-volatile memory device made
from asymmetric Ta 2 O 5 − x/TaO 2 − x bilayer structures. Nature Mater. 10(8), 625–630,
2011/08/01 (2011)
12. D.J.J. Loy, P.A. Dananjaya, X.L. Hong, D.P. Shum, W.S. Lew, Conduction mechanisms
on high retention annealed MgO-based resistive switching memory devices. Sci. Rep. 8(1),
p. 14774, 2018/10/03 (2018)
13. C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, C. Hu, T.-Y. Tseng, Bistable resistive switching in Al 2 O 3
memory thin films. J. Electrochem. Soc. 154(9), G189–G192 (2007)
14. Y. Wu, S. Yu, B. Lee, P. Wong, Low-power TiN/Al 2 O 3 /Pt resistive switching device with sub20 μA switching current and gradual resistance modulation. J. Appl. Phys. 110(9), 094104
(2011)
15. B. Sarkar, B. Lee, V. Misra, Understanding the gradual reset in Pt/Al2O3/Ni RRAM for
synaptic applications, Semicond. Sci. Technol. 30(10), 105014, 2015/08/24 (2015)
16. Y. Wu, Y. Chai, H.-Y. Chen, S. Yu, H.-S.P. Wong, Resistive switching AlO x -based memory
with CNT electrode for ultra-low switching current and high density memory application, in
2011 Symposium on VLSI Technology-Digest of Technical Papers, pp. 26–27: IEEE (2011)
17. Y. Wu et al., AlO x -based resistive switching device with gradual resistance modulation for
neuromorphic device application, in 2012 4th IEEE International Memory Workshop, pp. 1–4:
IEEE (2012)
18. K. Park, J.-S. Lee, Reliable resistive switching memory based on oxygen-vacancy-controlled
bilayer structures, RSC Advances. https://doi.org/10.1039/c6ra00798h 6(26), 21736–21741
(2016)
19. L. Goux et al., Understanding of the intrinsic characteristics and memory trade-offs of subμA filamentary RRAM operation, in 2013 Symposium on VLSI Technology, pp. T162–T163:
IEEE (2013)
20. G.C. Adam, B.D. Hoskins, M. Prezioso, F. Merrikh-Bayat, B. Chakrabarti, D.B. Strukov,
3-D memristor crossbars for analog and neuromorphic computing applications. IEEE Trans.
Electron Devices 64(1), 312–318 (2016)
21. W. Banerjee, X. Xu, H. Lv, Q. Liu, S. Long, M. Liu, Variability improvement of tio x/Al 2 O 3
bilayer nonvolatile resistive switching devices by interfacial band engineering with an ultrathin
Al 2 O 3 dielectric material. ACS Omega 2(10), 6888–6895 (2017)
22. K.-C. Chuang et al., Impact of the stacking order of HfOx and AlOx dielectric films on RRAM
switching mechanisms to behave digital resistive switching and synaptic characteristics. IEEE
J. Electr. Dev. Soc. 7, 589–595 (2019)
23. Goux et al., Asymmetry and switching phenomenology in TiN\(Al 2 O 3 )\HfO 2 \Hf systems.
ECS Solid State Lett. 1(4), P63–P65 (2012)
24. W. Song et al., Analog switching characteristics in TiW/Al 2 O 3 /Ta 2 O 5 /Ta RRAM devices.
Appl. Phys. Lett. 115(13), 133501 (2019)
25. J. Woo et al., Improved synaptic behavior under identical pulses using AlO x/HfO 2 bilayer
RRAM array for neuromorphic systems. IEEE Electr. Dev. Lett. 37(8), 994–997 (2016)