RRAM Device Characterizations and Modelling
379
26. H.S.P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F.T. Chen, M.-J. Tsai,
Metal-oxide RRAM. Proc. IEEE 100(6), 1951 (2012)
27. Y.S. Chen, J.F. Kang, B. Chen, B. Gao, L.F. Liu, X.Y. Liu, Y.Y. Wang, L. Wu, H.Y. Yu, J.Y.
Wang, Q. Chen, E.G. Wang, Microscopic mechanism for unipolar resistive switching behaviour
of nickel oxides. J. Phys. D: Appl. Phys. 45(6), 065303 (2012)
28. S. Larentis, F. Nardi, S. Balatti, D.C. Gilmer, D. Ielmini, Resistive switching by voltage-driven
ion migration in bipolar RRAM—Part II: modeling. IEEE Trans. Electr. Dev. 59(9), 2468
(2012)
29. Y.M. Kim, J.S. Lee, Reproducible resistance switching characteristics of hafnium oxide-based
nonvolatile memory devices. J. Appl. Phys. 104(11), 114115 (2008)
30. Q. Liu, W.H. Guan, S.B. Long, R. Jia, M. Liu, J.N. Chen, Resistive switching memory effect
of ZrO2 films with Zr+ implanted. Appl. Phys. Lett. 92(1), 012117 (2008)
31. E. Ielmini, F. Nardi, C. Cagli, A.L. Lacaita, Size-dependent retention time in NiO-based
resistive-switching memories. IEEE Electr. Dev. Lett. 31(4), 353 (2010)
32. N.F. Mott, E.A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford,
U.K., 1979)
33. S. M. Yu, Y. Wu, H.-S. Philip Wong, Investigating the switching dynamics and multilevel
capability of bipolar metal oxide resistive switching memory. Appl. Phys. Lett. 98(10),
103514(2011)
34. M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y.-B. Kim, C.-J. Kim, D. H.
Seo, S. Seo, U-I. Chung, In-K. Yoo, K. Kim, A fast, high-endurance and scalable non-volatile
memory device made from asymmetric Ta 2 O 5−X /TaO 2−X bilayer structures. Nat. Mater. 10(8),
625 (2011)
35. M. Hu, Z. Yao, X. Wang, Characterization techniques for graphene-based materials in catalysis.
AIMS Mater. Sci. 4(3), 755 (2017)
36. H. Tian, H.-Y. Chen, B. Gao, S. Yu, J. Liang, Y. Yang, D. Xie, J. Kang, T.-L. Ren, Y. Zhang, H.S.P. Wong, Monitoring oxygen movement by raman spectroscopy of resistive random access
memory with a graphene-inserted electrode. Nano Lett. 13(2), 651 (2013)
37. Z. Wang, S. Joshi, S. E. Savel’ev, H. Jiang, R. Midya, P. Lin, M. Hu, N. Ge, J.P. Strachan, Z.
Li, Q. Wu, M. Barnell, G.-L. Li, H.L. Xin, R.S. Williams, Q. Xia, J.J. Yang, Memristors with
diffusive dynamics as synaptic emulators for neuromorphic computing. Nature Mater. 16(1),
101 (2016)
38. P. Calka, E. Martinez, D. Lafond, H. Dansas, S. Tirano, V. Jousseaume, F. Bertin, C. Guedj,
Resistance switching in HfO 2 -based OxRRAM devices. Microelectr. Eng. 88(7), 1140 (2011)
39. A. Ranjan, N. Raghavan, K. Shubhakar, R. Thamankar, J. Molina, S.J. O’Shea, M. Bosman,
K.L. Pey, CAFM based spectroscopy of stress-induced defects in HfO 2 with experimental
evidence of the clustering model and metastable vacancy defect state. in Reliability Physics
Symposium, 7A-4–1 (2016)
40. P. Huang, X.Y. Liu, W.H. Li, Y.X. Deng, B. Chen, Y. Lu, B. Gao, L. Zeng, K.L. Wei, G. Du, X.
Zhang, J.F. Kang, A physical based analytic model of RRAM operation for circuit simulation.
in Tech. Dig. IEEE Int. Electron Devices Meeting, p. 605 (2012)
41. R. Pornprasertsuk, T. Holme, F.B. Prinz, Kinetic Monte Carlosimulations of solid oxide fuel
cell. J. Electrochem. Soc. 156(12), B1406 (2009)
42. S. Yu, X. Guan, H.-S. P. Wong, On the stochastic nature of resistive switching in metal oxide
RRAM: physical modeling, Monte Carlo simulation, and experimental characterization. in
Tech. Dig. IEEE Int. Electron Devices Meeting, p. 413 (2011)
43. S.C. Chae, J.S. Lee, S. Kim, S.B. Lee, S.H. Chang, C. Liu, B. Kahng, H. Shin, D.-W. Kim,
C.U. Jung, S. Seo, M.-J. Lee, T.W. Noh, Random circuit breaker network model for unipolar
resistance switching. Adv. Mater. 20(6), 1154 (2008)
44. Y.D. Zhao, P. Huang, Z. Chen, H. Li, B. Chen, W. Ma, F. Zhang, B. Gao, X. Liu, J. Kang,
Modeling and optimization of bilayered TaOx RRAM based on defect evolution and phase
transition effects. IEEE Trans. Electr. Dev. 63(4), 1524 (2016)
45. T. Sadi, L. Wang, L. Gerrer, V. Georgieva, A. Asenov, Self-consistent physical modeling
of SiOx-based RRAM structures. In International Workshop on Computational Electronics
(IWCE) (2015)
379
26. H.S.P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F.T. Chen, M.-J. Tsai,
Metal-oxide RRAM. Proc. IEEE 100(6), 1951 (2012)
27. Y.S. Chen, J.F. Kang, B. Chen, B. Gao, L.F. Liu, X.Y. Liu, Y.Y. Wang, L. Wu, H.Y. Yu, J.Y.
Wang, Q. Chen, E.G. Wang, Microscopic mechanism for unipolar resistive switching behaviour
of nickel oxides. J. Phys. D: Appl. Phys. 45(6), 065303 (2012)
28. S. Larentis, F. Nardi, S. Balatti, D.C. Gilmer, D. Ielmini, Resistive switching by voltage-driven
ion migration in bipolar RRAM—Part II: modeling. IEEE Trans. Electr. Dev. 59(9), 2468
(2012)
29. Y.M. Kim, J.S. Lee, Reproducible resistance switching characteristics of hafnium oxide-based
nonvolatile memory devices. J. Appl. Phys. 104(11), 114115 (2008)
30. Q. Liu, W.H. Guan, S.B. Long, R. Jia, M. Liu, J.N. Chen, Resistive switching memory effect
of ZrO2 films with Zr+ implanted. Appl. Phys. Lett. 92(1), 012117 (2008)
31. E. Ielmini, F. Nardi, C. Cagli, A.L. Lacaita, Size-dependent retention time in NiO-based
resistive-switching memories. IEEE Electr. Dev. Lett. 31(4), 353 (2010)
32. N.F. Mott, E.A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon, Oxford,
U.K., 1979)
33. S. M. Yu, Y. Wu, H.-S. Philip Wong, Investigating the switching dynamics and multilevel
capability of bipolar metal oxide resistive switching memory. Appl. Phys. Lett. 98(10),
103514(2011)
34. M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, M. Chang, J. H. Hur, Y.-B. Kim, C.-J. Kim, D. H.
Seo, S. Seo, U-I. Chung, In-K. Yoo, K. Kim, A fast, high-endurance and scalable non-volatile
memory device made from asymmetric Ta 2 O 5−X /TaO 2−X bilayer structures. Nat. Mater. 10(8),
625 (2011)
35. M. Hu, Z. Yao, X. Wang, Characterization techniques for graphene-based materials in catalysis.
AIMS Mater. Sci. 4(3), 755 (2017)
36. H. Tian, H.-Y. Chen, B. Gao, S. Yu, J. Liang, Y. Yang, D. Xie, J. Kang, T.-L. Ren, Y. Zhang, H.S.P. Wong, Monitoring oxygen movement by raman spectroscopy of resistive random access
memory with a graphene-inserted electrode. Nano Lett. 13(2), 651 (2013)
37. Z. Wang, S. Joshi, S. E. Savel’ev, H. Jiang, R. Midya, P. Lin, M. Hu, N. Ge, J.P. Strachan, Z.
Li, Q. Wu, M. Barnell, G.-L. Li, H.L. Xin, R.S. Williams, Q. Xia, J.J. Yang, Memristors with
diffusive dynamics as synaptic emulators for neuromorphic computing. Nature Mater. 16(1),
101 (2016)
38. P. Calka, E. Martinez, D. Lafond, H. Dansas, S. Tirano, V. Jousseaume, F. Bertin, C. Guedj,
Resistance switching in HfO 2 -based OxRRAM devices. Microelectr. Eng. 88(7), 1140 (2011)
39. A. Ranjan, N. Raghavan, K. Shubhakar, R. Thamankar, J. Molina, S.J. O’Shea, M. Bosman,
K.L. Pey, CAFM based spectroscopy of stress-induced defects in HfO 2 with experimental
evidence of the clustering model and metastable vacancy defect state. in Reliability Physics
Symposium, 7A-4–1 (2016)
40. P. Huang, X.Y. Liu, W.H. Li, Y.X. Deng, B. Chen, Y. Lu, B. Gao, L. Zeng, K.L. Wei, G. Du, X.
Zhang, J.F. Kang, A physical based analytic model of RRAM operation for circuit simulation.
in Tech. Dig. IEEE Int. Electron Devices Meeting, p. 605 (2012)
41. R. Pornprasertsuk, T. Holme, F.B. Prinz, Kinetic Monte Carlosimulations of solid oxide fuel
cell. J. Electrochem. Soc. 156(12), B1406 (2009)
42. S. Yu, X. Guan, H.-S. P. Wong, On the stochastic nature of resistive switching in metal oxide
RRAM: physical modeling, Monte Carlo simulation, and experimental characterization. in
Tech. Dig. IEEE Int. Electron Devices Meeting, p. 413 (2011)
43. S.C. Chae, J.S. Lee, S. Kim, S.B. Lee, S.H. Chang, C. Liu, B. Kahng, H. Shin, D.-W. Kim,
C.U. Jung, S. Seo, M.-J. Lee, T.W. Noh, Random circuit breaker network model for unipolar
resistance switching. Adv. Mater. 20(6), 1154 (2008)
44. Y.D. Zhao, P. Huang, Z. Chen, H. Li, B. Chen, W. Ma, F. Zhang, B. Gao, X. Liu, J. Kang,
Modeling and optimization of bilayered TaOx RRAM based on defect evolution and phase
transition effects. IEEE Trans. Electr. Dev. 63(4), 1524 (2016)
45. T. Sadi, L. Wang, L. Gerrer, V. Georgieva, A. Asenov, Self-consistent physical modeling
of SiOx-based RRAM structures. In International Workshop on Computational Electronics
(IWCE) (2015)