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Clima, L. Zhang, A. Belmonte, A. Redolfi, G. S. Kar, G. Groeseneken, D. J. Wouters, M.
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J. Kang, X. Liu, X. Wang, B.B. Weng, Y.Z. Tang, G.-Q. Lo, D.-L. Kwong, Analytic model
of endurance degradation and its practical applications for operation scheme optimization in
metal oxide based RRAM. in Tech. Dig. IEEE Int. Electron Devices Meeting, p. 597 (2013)
49. L. Chua, Memristor—the missing circuit element. IEEE Trans Circuit Theory 18(5), 507 (1971)
50. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, The missing memristor found. Nature
453(7191), 80 (2008)
51. X. Guan, S. Yu, H.-S.P. Wong, A SPICE compact model of metal oxide resistive switching
memory with variations. IEEE Electr. Dev. Lett. 33(10), 1405 (2012)
52. H. Li, P. Huang, B. Gao, B. Chen, X. Liu, J. Kang, A SPICE model of resistive random access
memory for large-scale memory array simulation. IEEE Electr. Dev. Lett. 35(2), 211 (2014)
53. M. Bocquet, D. Deleruyelle, C. Muller, J.-M. Portal, Self-consistent physical modeling of
set/reset operations in unipolar resistive-switching memories. Appl. Phys. Lett. 98(26), 263507
(2011)
54. M. Bocquet, D. Deleruyelle, H. Aziza, C. Muller, J.-M. Portal, T. Cabout, E. Jalaguier, Robust
compact model for bipolar oxide-based resistive switching memories. IEEE Trans. Electr. Dev.
61(3), 674 (2014)
55. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, Filament conduction and reset mechanism in
NiO-based resistive-switching memory (RRAM) devices. IEEE Trans. Electr. Dev. 56(2), 186
(2009)
56. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, Self-accelerated thermal-dissolution model for
reset programming in unipolar resistive switching memory (RRAM) devices. IEEE Trans.
Electr. Dev. 56(2), 193 (2009)
57. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, S.S. Williams Memristive
switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotech. 3(7) 429 (2008)
58. D.B. Strukov, R.S. Williams, Exponential ionic drift: fast switching and low volatility of thinfilm memristors. Appl Phys Mater Sci Process 94(3), 515 (2009)
59. V.-A. Manual, Accellera Org (Inc., Napa, CA, USA, 2009)
60. Y.X. Deng, P. Huang, B. Chen, X. Yang, B. Gao, J. Wang, L. Zeng, G. Du, J. Kang, X. Liu,
RRAM crossbar array with cell selection device: a device and circuit interaction study. IEEE
Trans. Electr. Dev. 60(2), 719(2013)
61. U. Russo, D. Ielmini, C. Cagli, A. L. Lacaita, S. Spiga, C. Wiemer, M. Perego, M. Fanciulli,
in IEEE International Electron Devices Meeting, p. 775 (2007)
62. A.J. Bard, L.R. Faulkner, Electrochemical Methods: Fundamentals and Applications (Wiley,
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63. H.Y. Lee, P.S. Chen, T.Y. Wu, Y.S. Chen, C.C. Wang, P.J. Tzeng, C.H. Lin, F. Chen, C.H. Lien,
M.-J. Tsai, Low power and high speed bipolar switching with a thin reactive Ti buffer layer in
robust HfO 2 based RRAM, in IEEE International Electron Devices Meeting, p. 1 (2008)
64. Y.S. Chen, T.-Y. Wu, P.-J. Tzeng, P.-S. Chen, H.-Y. Lee, C.-H. Lin, F. Chen, M.-J. Tsai,
Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation.
in International Symposium on Vlsi Technology, Systems, and Applications, p. 37 (2009)
65. L.G.A. Fantini, A. Redolfi, R. Degraeve, G. Kar, Y.Y Chen, M. Jurczak, Lateral and vertical
scaling impact on statistical performances and reliability of 10nm TiN/Hf(Al)O/Hf/TiN RRAM
devices. in 2014 Symposium on VLSI Technology Digest of Technical Papers, p. 1 (2014)
66. C.Y. Chen, L. Goux, A. Fantini, A. Redolfi, Understanding the impact of programming pulses
and electrode materials on the endurance properties of scaled Ta 2 O 5 RRAM cells. in IEEE
International Electron Devices Meeting, p. 355 (2014)
P. Huang et al.
46. P. Huang, B. Chen, H. Li, Z. Chen, B. Gao, X. Liu, Parameters extraction on HfO X based
RRAM. In European Solid-State Device Research Conference (ESSDERC), p. 250 (2014)
47. Y. Y. Chen, M. Komura, R. Degraeve, B. Govoreanu, L. Goux, A. Fantini, N. Raghavan, S.
Clima, L. Zhang, A. Belmonte, A. Redolfi, G. S. Kar, G. Groeseneken, D. J. Wouters, M.
Jurczak, Improvement of data retention in HfO 2 /Hf 1T1R RRAM cell under low operating
current. in Tech. Dig. IEEE Int. Electron Devices Meeting, p. 252 (2013)
48. P. Huang, B. Chen, Y. Wang, F. Zhang, L. Shen, R. Liu, L. Zeng, G. Du, X. Zhang, B. Gao,
J. Kang, X. Liu, X. Wang, B.B. Weng, Y.Z. Tang, G.-Q. Lo, D.-L. Kwong, Analytic model
of endurance degradation and its practical applications for operation scheme optimization in
metal oxide based RRAM. in Tech. Dig. IEEE Int. Electron Devices Meeting, p. 597 (2013)
49. L. Chua, Memristor—the missing circuit element. IEEE Trans Circuit Theory 18(5), 507 (1971)
50. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, The missing memristor found. Nature
453(7191), 80 (2008)
51. X. Guan, S. Yu, H.-S.P. Wong, A SPICE compact model of metal oxide resistive switching
memory with variations. IEEE Electr. Dev. Lett. 33(10), 1405 (2012)
52. H. Li, P. Huang, B. Gao, B. Chen, X. Liu, J. Kang, A SPICE model of resistive random access
memory for large-scale memory array simulation. IEEE Electr. Dev. Lett. 35(2), 211 (2014)
53. M. Bocquet, D. Deleruyelle, C. Muller, J.-M. Portal, Self-consistent physical modeling of
set/reset operations in unipolar resistive-switching memories. Appl. Phys. Lett. 98(26), 263507
(2011)
54. M. Bocquet, D. Deleruyelle, H. Aziza, C. Muller, J.-M. Portal, T. Cabout, E. Jalaguier, Robust
compact model for bipolar oxide-based resistive switching memories. IEEE Trans. Electr. Dev.
61(3), 674 (2014)
55. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, Filament conduction and reset mechanism in
NiO-based resistive-switching memory (RRAM) devices. IEEE Trans. Electr. Dev. 56(2), 186
(2009)
56. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, Self-accelerated thermal-dissolution model for
reset programming in unipolar resistive switching memory (RRAM) devices. IEEE Trans.
Electr. Dev. 56(2), 193 (2009)
57. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, S.S. Williams Memristive
switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotech. 3(7) 429 (2008)
58. D.B. Strukov, R.S. Williams, Exponential ionic drift: fast switching and low volatility of thinfilm memristors. Appl Phys Mater Sci Process 94(3), 515 (2009)
59. V.-A. Manual, Accellera Org (Inc., Napa, CA, USA, 2009)
60. Y.X. Deng, P. Huang, B. Chen, X. Yang, B. Gao, J. Wang, L. Zeng, G. Du, J. Kang, X. Liu,
RRAM crossbar array with cell selection device: a device and circuit interaction study. IEEE
Trans. Electr. Dev. 60(2), 719(2013)
61. U. Russo, D. Ielmini, C. Cagli, A. L. Lacaita, S. Spiga, C. Wiemer, M. Perego, M. Fanciulli,
in IEEE International Electron Devices Meeting, p. 775 (2007)
62. A.J. Bard, L.R. Faulkner, Electrochemical Methods: Fundamentals and Applications (Wiley,
New York, 2001)
63. H.Y. Lee, P.S. Chen, T.Y. Wu, Y.S. Chen, C.C. Wang, P.J. Tzeng, C.H. Lin, F. Chen, C.H. Lien,
M.-J. Tsai, Low power and high speed bipolar switching with a thin reactive Ti buffer layer in
robust HfO 2 based RRAM, in IEEE International Electron Devices Meeting, p. 1 (2008)
64. Y.S. Chen, T.-Y. Wu, P.-J. Tzeng, P.-S. Chen, H.-Y. Lee, C.-H. Lin, F. Chen, M.-J. Tsai,
Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation.
in International Symposium on Vlsi Technology, Systems, and Applications, p. 37 (2009)
65. L.G.A. Fantini, A. Redolfi, R. Degraeve, G. Kar, Y.Y Chen, M. Jurczak, Lateral and vertical
scaling impact on statistical performances and reliability of 10nm TiN/Hf(Al)O/Hf/TiN RRAM
devices. in 2014 Symposium on VLSI Technology Digest of Technical Papers, p. 1 (2014)
66. C.Y. Chen, L. Goux, A. Fantini, A. Redolfi, Understanding the impact of programming pulses
and electrode materials on the endurance properties of scaled Ta 2 O 5 RRAM cells. in IEEE
International Electron Devices Meeting, p. 355 (2014)