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characteristics of ZnO thin films for nonvolatile memory applications. Appl. Phys. Lett. 92(2),
022110 (2008)
9. X. Sun, B. Sun, L. Liu, N. Xu, X. Liu, R. Han, J. Kang, G. Xiong, T.P. Ma, Resistive switching
in CeOx films for nonvolatile memory application. IEEE Electr. Dev. Lett. 30(4), 334 (2009)
10. H.Y. Lee, P.S. Chen, T.Y. Wu, Y.S. Chen, C.C. Wang, P.J. Tzeng, C.H. Lin, F. Chen, C.H. Lien,
M.-J. Tsai, Low power and high speed bipolar switching with a thin reactive Ti buffer layer in
robust HfO 2 based RRAM. in Tech. Dig. IEEE Int. Electron Devices Meeting, p. 297 (2008)
11. Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama,
M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T.
Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, M. Oshima, Highly reliable TaOx ReRAM and direct evidence of redox reaction
mechanism. in Tech. Dig. IEEE Int. Electron Devices Meeting, p. 293 (2008)
12. Y. Wu, B. Lee, H.P. Wong, Al 2 O 3 -based RRAM using atomic layer deposition (ALD) with
1-µA RESET current. IEEE Electr. Dev.Lett. 31(12), 1449 (2010)
13. R. Waser, R. Dittmann, G. Staikov, K. Szot, Redox-based resistive switching memories:
Nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21(25), 2632 (2009)
14. B. Gao, J.F. Kang, Y.S. Chen, F.F. Zhang, B. Chen, P. Huang, L.F. Liu, X.Y. Liu, Y.Y. Wang,
X.A Tran, Z.R. Wang, H.Y. Yu, A. Chin, Oxide-based RRAM: unified microscopic principle
for both unipolar and bipolar switching. in Tech. Dig. IEEE Int. Electron Devices Meeting,
p.417 (2011)
15. R. Valov, J.R. Waser, M.N. Jameson, Kozicki, Electrochemical metallization memories:
Fundamentals, applications, prospects. Nanotechnology 22(25), 254003 (2011)
16. Q. Liu, J. Sun, H. Lv, S. Long, K. Yin, N. Wan, Y. Li, L. Sun, M. Liu, Real-time observation on
dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM. Adv.
Mater. 24(14), 1844 (2012)
17. M. Terai, Y. Sakotsubo, S. Kotsuji, H. Hada, Resistance controllability of Ta 2 O 5 /TiO 2 stack
ReRAM for low-voltage and multilevel operation. IEEE Electr. Dev. Lett. 31(3), 204 (2010)
18. X.M. Guan, S.M. Yu, H.-S. Philip Wong, On the switching parameter variation of metal-oxide
RRAM—Part I: Physical modeling and simulation methodology. IEEE Trans. Electr. Dev.
59(4), 1172 (2012)
19. L. Vandelli, A. Padovani, L. Larcher, G. Broglia, G. Ori, M. Montorsi, G. Bersuker P. Pavan,
Comprehensive physical modeling of forming and switching operations in HfO 2 RRAM
devices. in Tech. Dig. IEEE Int. Electron Devices Meeting, p. 421 (2011)
20. P. Huang, B. Gao, B. Chen, F.F. Zhang, L. F. Liu, G. Du, J.F. Kang, X.Y. Liu, Stochastic
simulation of forming, SET and RESET process for transition metal oxide-based resistive
switching memory. In International Conference on Simulation of Semiconductor Processes
and Devices, p. 312 (2012)
21. S. Yu, B. Gao, Z. Fang, H. Yu, J. Kang, H.-S.P. Wong, A low energy oxide-based electronic
synaptic device for neuromorphic visual systems with tolerance to device variation. Adv. Mater.
25(12), 1774 (2013)
22. P. Huang, X.Y. Liu, B. Chen, H.T. Li, Y.J. Wang, Y.X. Deng, K.L. Wei, L. Zeng, B. Gao, G.
Du, X. Zhang, J.F. Kang, A physics based compact model of metal oxide based RRAM DC
and AC operation. IEEE Trans. Electr. Dev. 60(12), 1114 (2013)
23. B. Gao, S. Yu, N. Xu, L.F. Liu, B. Sun, X.Y. Liu, R.Q. Han, J.F. Kang, B. Yu, Y.Y. Wang, Oxidebased RRAM switching mechanism: a new ion-transport-recombination model, in Tech. Dig.
IEEE Int. Electron Devices Meeting, p. 563 (2008)
24. B. Gao, J. Kang, L. Liu, X. Liu, B. Yu, A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect. Appl. Phys. Lett. 98(23),
232108 (2011)
25. P. Huang, D. Zhu, S. Chen, Z. Zhou, Z. Chen, B. Gao, L. Liu, X. Liu, J. Kang, Compact model
of HfO X -Based electronic synaptic devices for neuromorphic computing. IEEE Trans. Electr.
Dev. 64(2), 614 (2017)
P. Huang et al.
8. W.Y. Chang, Y.C. Lai, T.B. Wu, S.F. Wang, F. Chen, M.J. Tsai, Unipolar resistive switching
characteristics of ZnO thin films for nonvolatile memory applications. Appl. Phys. Lett. 92(2),
022110 (2008)
9. X. Sun, B. Sun, L. Liu, N. Xu, X. Liu, R. Han, J. Kang, G. Xiong, T.P. Ma, Resistive switching
in CeOx films for nonvolatile memory application. IEEE Electr. Dev. Lett. 30(4), 334 (2009)
10. H.Y. Lee, P.S. Chen, T.Y. Wu, Y.S. Chen, C.C. Wang, P.J. Tzeng, C.H. Lin, F. Chen, C.H. Lien,
M.-J. Tsai, Low power and high speed bipolar switching with a thin reactive Ti buffer layer in
robust HfO 2 based RRAM. in Tech. Dig. IEEE Int. Electron Devices Meeting, p. 297 (2008)
11. Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama,
M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T.
Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, M. Oshima, Highly reliable TaOx ReRAM and direct evidence of redox reaction
mechanism. in Tech. Dig. IEEE Int. Electron Devices Meeting, p. 293 (2008)
12. Y. Wu, B. Lee, H.P. Wong, Al 2 O 3 -based RRAM using atomic layer deposition (ALD) with
1-µA RESET current. IEEE Electr. Dev.Lett. 31(12), 1449 (2010)
13. R. Waser, R. Dittmann, G. Staikov, K. Szot, Redox-based resistive switching memories:
Nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21(25), 2632 (2009)
14. B. Gao, J.F. Kang, Y.S. Chen, F.F. Zhang, B. Chen, P. Huang, L.F. Liu, X.Y. Liu, Y.Y. Wang,
X.A Tran, Z.R. Wang, H.Y. Yu, A. Chin, Oxide-based RRAM: unified microscopic principle
for both unipolar and bipolar switching. in Tech. Dig. IEEE Int. Electron Devices Meeting,
p.417 (2011)
15. R. Valov, J.R. Waser, M.N. Jameson, Kozicki, Electrochemical metallization memories:
Fundamentals, applications, prospects. Nanotechnology 22(25), 254003 (2011)
16. Q. Liu, J. Sun, H. Lv, S. Long, K. Yin, N. Wan, Y. Li, L. Sun, M. Liu, Real-time observation on
dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM. Adv.
Mater. 24(14), 1844 (2012)
17. M. Terai, Y. Sakotsubo, S. Kotsuji, H. Hada, Resistance controllability of Ta 2 O 5 /TiO 2 stack
ReRAM for low-voltage and multilevel operation. IEEE Electr. Dev. Lett. 31(3), 204 (2010)
18. X.M. Guan, S.M. Yu, H.-S. Philip Wong, On the switching parameter variation of metal-oxide
RRAM—Part I: Physical modeling and simulation methodology. IEEE Trans. Electr. Dev.
59(4), 1172 (2012)
19. L. Vandelli, A. Padovani, L. Larcher, G. Broglia, G. Ori, M. Montorsi, G. Bersuker P. Pavan,
Comprehensive physical modeling of forming and switching operations in HfO 2 RRAM
devices. in Tech. Dig. IEEE Int. Electron Devices Meeting, p. 421 (2011)
20. P. Huang, B. Gao, B. Chen, F.F. Zhang, L. F. Liu, G. Du, J.F. Kang, X.Y. Liu, Stochastic
simulation of forming, SET and RESET process for transition metal oxide-based resistive
switching memory. In International Conference on Simulation of Semiconductor Processes
and Devices, p. 312 (2012)
21. S. Yu, B. Gao, Z. Fang, H. Yu, J. Kang, H.-S.P. Wong, A low energy oxide-based electronic
synaptic device for neuromorphic visual systems with tolerance to device variation. Adv. Mater.
25(12), 1774 (2013)
22. P. Huang, X.Y. Liu, B. Chen, H.T. Li, Y.J. Wang, Y.X. Deng, K.L. Wei, L. Zeng, B. Gao, G.
Du, X. Zhang, J.F. Kang, A physics based compact model of metal oxide based RRAM DC
and AC operation. IEEE Trans. Electr. Dev. 60(12), 1114 (2013)
23. B. Gao, S. Yu, N. Xu, L.F. Liu, B. Sun, X.Y. Liu, R.Q. Han, J.F. Kang, B. Yu, Y.Y. Wang, Oxidebased RRAM switching mechanism: a new ion-transport-recombination model, in Tech. Dig.
IEEE Int. Electron Devices Meeting, p. 563 (2008)
24. B. Gao, J. Kang, L. Liu, X. Liu, B. Yu, A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect. Appl. Phys. Lett. 98(23),
232108 (2011)
25. P. Huang, D. Zhu, S. Chen, Z. Zhou, Z. Chen, B. Gao, L. Liu, X. Liu, J. Kang, Compact model
of HfO X -Based electronic synaptic devices for neuromorphic computing. IEEE Trans. Electr.
Dev. 64(2), 614 (2017)