RRAM Device Characterizations and Modelling
373
Fig. 26 a Typical I-V curve of bipolar resistive switching characteristic in 1R and 1T1R configuration of the TiN/TiO X /HfO X /TiN devices, b retention properties of resistance of LRS (R Low ) and
HRS (R High ) at 150 and 200 °C. The result predicts 10 years lifetime of stored bit. Reprinted from
[63]
the resistance corresponding to the read voltage is recorded as the current resistance
of RRAM cell. Besides, the window in I-V curve could reflect the ability of the
resistive switching and the health level of RRAM cell. In addition, it is also called
on–off ratio and it is proved that cycling endurance could result in the degradation
of the on–off ratio. DC test could be measured with a comprehensive semiconductor
device parameter analyzer, such as Agilent 4156, Agilent B1500, and Keithley 4200,
etc.
Pulse measurement is widely used in the research of RRAM characteristics. In
practical applications, the excitation signal of RRAM is pulse signal. Figure 27 shows
the typical pulse cycling test waveform: after performing a SET pulse operation, a
read operation is followed; and after performing a RESET pulse operation, a read
Fig. 27 The typical pulse
test waveform for RRAM
device
373
Fig. 26 a Typical I-V curve of bipolar resistive switching characteristic in 1R and 1T1R configuration of the TiN/TiO X /HfO X /TiN devices, b retention properties of resistance of LRS (R Low ) and
HRS (R High ) at 150 and 200 °C. The result predicts 10 years lifetime of stored bit. Reprinted from
[63]
the resistance corresponding to the read voltage is recorded as the current resistance
of RRAM cell. Besides, the window in I-V curve could reflect the ability of the
resistive switching and the health level of RRAM cell. In addition, it is also called
on–off ratio and it is proved that cycling endurance could result in the degradation
of the on–off ratio. DC test could be measured with a comprehensive semiconductor
device parameter analyzer, such as Agilent 4156, Agilent B1500, and Keithley 4200,
etc.
Pulse measurement is widely used in the research of RRAM characteristics. In
practical applications, the excitation signal of RRAM is pulse signal. Figure 27 shows
the typical pulse cycling test waveform: after performing a SET pulse operation, a
read operation is followed; and after performing a RESET pulse operation, a read
Fig. 27 The typical pulse
test waveform for RRAM
device