372
P. Huang et al.
Fig. 25 The measured and
calculated I-V characteristic
of NiO based unipolar
RRAM. Reprinted from [53]
where E a is the activation energy, governing the thermally assisted diffusion of
metallic species.
Figure 25 shows the calculated quasi-static SET and RESET I-V characteristics, together with the measured data. Since both the CF creation and destruction are
described by the self-consistent kinetics equation, the model can continuously calculate the I-V characteristics of the switching process. Hence, the CF profile obtained
after SET operation is used as the initial state of the subsequent RESET operation.
The presented model excellently agrees with the experimental data in Fig. 25, which
demonstrates the validity of the model.
10 Electrical Characterization
RRAM utilizes the reversible resistive transition effect of materials to achieve information storage. SET and RESET programming are considered as the basic and
necessary processes for resistive switching. In this section, the electrical characterization techniques of Ox-RRAM are discussed. Typical measurement methods will
be discussed to illustrate the electrical characteristics of Ox-RRAM. Meanwhile, the
reliability issues such as retention, endurance and read disturb behaviors obtained
by these measurement methods would be introduced in detail.
A. Measurement Method
DC measurement refers to the process of applying gradually increasing voltage
sweeps to both ends of the device and obtaining current. It could be used to achieve
I-V curve and data retention of RRAM. The typical I-V curves of the memory device
in 1R and 1 T-1R configuration after forming process are shown in Fig. 26a, and the
typical retention test at high temperature shown in Fig. 26b. When applying increasing
voltage to a RRAM cell, the resistance could be calculated based on Ohm’s law. In
general, the read voltage is approximately one tenth of the switching voltage, and
P. Huang et al.
Fig. 25 The measured and
calculated I-V characteristic
of NiO based unipolar
RRAM. Reprinted from [53]
where E a is the activation energy, governing the thermally assisted diffusion of
metallic species.
Figure 25 shows the calculated quasi-static SET and RESET I-V characteristics, together with the measured data. Since both the CF creation and destruction are
described by the self-consistent kinetics equation, the model can continuously calculate the I-V characteristics of the switching process. Hence, the CF profile obtained
after SET operation is used as the initial state of the subsequent RESET operation.
The presented model excellently agrees with the experimental data in Fig. 25, which
demonstrates the validity of the model.
10 Electrical Characterization
RRAM utilizes the reversible resistive transition effect of materials to achieve information storage. SET and RESET programming are considered as the basic and
necessary processes for resistive switching. In this section, the electrical characterization techniques of Ox-RRAM are discussed. Typical measurement methods will
be discussed to illustrate the electrical characteristics of Ox-RRAM. Meanwhile, the
reliability issues such as retention, endurance and read disturb behaviors obtained
by these measurement methods would be introduced in detail.
A. Measurement Method
DC measurement refers to the process of applying gradually increasing voltage
sweeps to both ends of the device and obtaining current. It could be used to achieve
I-V curve and data retention of RRAM. The typical I-V curves of the memory device
in 1R and 1 T-1R configuration after forming process are shown in Fig. 26a, and the
typical retention test at high temperature shown in Fig. 26b. When applying increasing
voltage to a RRAM cell, the resistance could be calculated based on Ohm’s law. In
general, the read voltage is approximately one tenth of the switching voltage, and