RRAM Device Characterizations
and Modelling
Peng Huang, Bin Gao, and Jinfeng Kang
Abstract Resistive random access memory (RRAM) is one of the most promising
candidate for future nanoscale nonvolatile memory. Extensive research efforts have
been carried out to facilitate practical use of RRAM as data storage system.
However, further improvements, such as reducing the operation voltage and current,
suppressing the device variability, etc., are still needed for the commercialization of
RRAM. To further optimize the device performance, physical mechanism of resistive switching behavior must be understood and physical model should be developed.
This chapter summarizes the current physical mechanisms, which provides an atom
view of the resistive switching behavior. Then we will discuss the materials characterization used to identify the origins of switching behaviors, including the highresolution X-ray photoelectron spectroscopy (XPS), electron energy loss spectrum
(EELS), in situ transmission electron microscopy (TEM) and so on. After that, Monte
Carlo simulation of the dynamic resistive switching processes is presented, allowing
for correlating the observed switching characteristics with the microcosmic physical
processes. Besides, compact model for spice simulation of RRAM based circuit is
discussed. Finally, we will introduce the electrical characterization of RRAM, such
as retention, endurance, RTN and so on.
1 Introduction
Resistance switching phenomenon that the insulator can be switched between
different states has been found for over 40 years. The first reports of this phenomenon
can be traced back to 1960s [1, 2]. In the late 1990s and the early 2000s, the discovery
of hysteresis I-V characteristic in perovskite is reported [3, 4]. Since Samsung
P. Huang (B) · J. Kang
Institute of Microelectronics, Peking University, No. 5 Yiheyuan Road, Beijing 100871,
P. R. China
e-mail: phwang@pku.edu.cn
B. Gao
Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua
University, Beijing 100084, P. R. China
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2021
W. S. Lew et al. (eds.), Emerging Non-volatile Memory Technologies,
https://doi.org/10.1007/978-981-15-6912-8_11
345
and Modelling
Peng Huang, Bin Gao, and Jinfeng Kang
Abstract Resistive random access memory (RRAM) is one of the most promising
candidate for future nanoscale nonvolatile memory. Extensive research efforts have
been carried out to facilitate practical use of RRAM as data storage system.
However, further improvements, such as reducing the operation voltage and current,
suppressing the device variability, etc., are still needed for the commercialization of
RRAM. To further optimize the device performance, physical mechanism of resistive switching behavior must be understood and physical model should be developed.
This chapter summarizes the current physical mechanisms, which provides an atom
view of the resistive switching behavior. Then we will discuss the materials characterization used to identify the origins of switching behaviors, including the highresolution X-ray photoelectron spectroscopy (XPS), electron energy loss spectrum
(EELS), in situ transmission electron microscopy (TEM) and so on. After that, Monte
Carlo simulation of the dynamic resistive switching processes is presented, allowing
for correlating the observed switching characteristics with the microcosmic physical
processes. Besides, compact model for spice simulation of RRAM based circuit is
discussed. Finally, we will introduce the electrical characterization of RRAM, such
as retention, endurance, RTN and so on.
1 Introduction
Resistance switching phenomenon that the insulator can be switched between
different states has been found for over 40 years. The first reports of this phenomenon
can be traced back to 1960s [1, 2]. In the late 1990s and the early 2000s, the discovery
of hysteresis I-V characteristic in perovskite is reported [3, 4]. Since Samsung
P. Huang (B) · J. Kang
Institute of Microelectronics, Peking University, No. 5 Yiheyuan Road, Beijing 100871,
P. R. China
e-mail: phwang@pku.edu.cn
B. Gao
Institute of Microelectronics, Beijing Innovation Center for Future Chips (ICFC), Tsinghua
University, Beijing 100084, P. R. China
© The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2021
W. S. Lew et al. (eds.), Emerging Non-volatile Memory Technologies,
https://doi.org/10.1007/978-981-15-6912-8_11
345