Resistive Random Access Memory Device …
343
138. K. Martens, I.P. Radu, S. Mertens, X. Shi, L. Nyns, S. Cosemans, P. Favia, H. Bender, T.
Conard, M. Schaekers, S. De Gendt, V. Afanas’ev, J.A. Kittl, M. Heyns, M. Jurczak, The
VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition
switch on-off resistance. J. Appl. Phys. 112, 124501 (2012)
139. E. Cha, J. Woo, D. Lee, S. Lee, J. Song, Y. Koo, J.H. Lee, C.G. Park, M.Y. Yang, K. Kamiya, K.
Shiraishi, B. Magyari-Köpe, Y. Nishi, H. Hwang, Nanoscale (~10 nm) 3D vertical ReRAM and
NbO 2 threshold selector with TiN electrode, IEEE International Electron Devices Meeting,
pp. 10.5.1–10.5.4 (2013)
140. S. Kim, T.J. Ha, S. Kim, J.Y. Lee, K.K.W., J.H. Shin, Y.T. Park, S.P. Song, B.Y. Kim, W.G. Kim,
J.C. Lee, H.S. Lee, J.H. Song, E.R. Hwang, S.H. Cho, J.C. Ku, J.I. Kim, K.S. Kim, J.H. Yoo,
H.J. Kim, H.G. Jung, Improvement of characteristics of NbO 2 selector and full integration
of 4F2 2x-nm tech 1S1R ReRAM, in IEEE International Electron Devices Meeting (IEDM),
pp. 10.3.1–10.3.4 (2015)
141. X. Liu, S.K. Nandi, D.K. Venkatachalam, K. Belay, S. Song, R.G. Elliman, Reduced threshold
current in NbO 2 selector by engineering device structure. IEEE Electron Device Lett. 35(10),
1055–1057 (2014)
142. T. Sakata, K. Sakata, G. Höfer, T. Horiuchi, Preparation of NbO 2 single crystals by chemical
transport reaction. J. Cryst. Growth 12(2), 88–92 (1972)
143. J. Park, T. Hadamek, A.B. Posadas, E. Cha, A.A. Demkov, H. Hwang, Multi-layered
NiO y /NbO x /NiO y fast drift-free threshold switch with high I on /I off ratio for selector
application. Sci. Rep. 7, 4068 (2017)
144. S.R. Ovshinsky, Reversible electrical switching phenomena in disordered structures. Phys.
Rev. Lett. 21(20), 1450–1453 (1968)
145. Y. Koo, H. Hwang, Zn 1-x Te x ovonic threshold switching device performance and its correlation
to material parameters. Sci. Rep. 8, 11822 (2018)
146. T. Gao, J. Feng, H. Ma, The ovonic threshold switching characteristics in Si x Te 1-x based
selector devices. Appl. Phys. A 124, 734 (2018)
147. M. Lee, D. Lee, S.-H. Cho, J.-H. Hur, S.-M. Lee, D.H. Seo, D.-S. Kim, M.-S. Yang, S. Lee, E.
Hwang, M.R. Uddin, H. Kim, U.-I. Chung, Y. Park, I.-K. Yoo, A plasma-treated chalcogenide
switch device for stackable scalable 3D nanoscale memory. Nat. Commun. 4, 2629 (2013)
148. H.Y. Cheng, W.C. Chien, I.T. Kuo, E.K. Lai, Y. Zhu, J.L. Jordan-Sweet, A. Ray, F. Carta, F.M.
Lee, P. Tseng, M. Lee, Y. Lin, W. Kim, R. Bruce, C.W. Yeh, C. Yang, M. BrightSky, H. Lung,
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides
compatible with BEOL IC Integration for cross-point PCM, in IEEE International Electron
Devices Meeting (IEDM), pp. 2.2.1–2.2.4 (2017)
149. M.-J. Lee, D. Lee, H. Kim, H.-S. Choi, J.-B. Park, H.G. Kim, Y.-K. Cha, U.-I. Chung, I.K. Yoo, K. Kim, Highly-scalable threshold switching select device based on chaclogenide
glasses for 3D nanoscaled memory arrays, in IEEE International Electron Devices Meeting
(IEDM), pp. 2.6.1–2.6.3 (2012)
150. M. Alayan, E. Vianello, G. Navarro, C. Carabasse, S. La Barbera, A. Verdy, N. Castellani,
A. Levisse, G. Molas, L. Grenouillet, T. Magis, F. Aussenac, M. Bernard, B. DeSalvo, J.M.
Portal, E. Nowak, In-depth investigation of programming and reading operations in RRAM
cells integrated with Ovonic Threshold Switching (OTS) selectors, in IEEE International
Electron Devices Meeting (IEDM), pp. 2.3.1–2.3.4 (2017)
151. S.H. Jo, T. Kumar, S. Narayanan, W.D. Lu, H. Nazarian, 3D-stackable crossbar resistive memory based on Field Assisted Superlinear Threshold (FAST) selector, in IEEE
International Electron Devices Meeting (IEDM), pp. 6.7.1–6.7.4 (2014)
343
138. K. Martens, I.P. Radu, S. Mertens, X. Shi, L. Nyns, S. Cosemans, P. Favia, H. Bender, T.
Conard, M. Schaekers, S. De Gendt, V. Afanas’ev, J.A. Kittl, M. Heyns, M. Jurczak, The
VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition
switch on-off resistance. J. Appl. Phys. 112, 124501 (2012)
139. E. Cha, J. Woo, D. Lee, S. Lee, J. Song, Y. Koo, J.H. Lee, C.G. Park, M.Y. Yang, K. Kamiya, K.
Shiraishi, B. Magyari-Köpe, Y. Nishi, H. Hwang, Nanoscale (~10 nm) 3D vertical ReRAM and
NbO 2 threshold selector with TiN electrode, IEEE International Electron Devices Meeting,
pp. 10.5.1–10.5.4 (2013)
140. S. Kim, T.J. Ha, S. Kim, J.Y. Lee, K.K.W., J.H. Shin, Y.T. Park, S.P. Song, B.Y. Kim, W.G. Kim,
J.C. Lee, H.S. Lee, J.H. Song, E.R. Hwang, S.H. Cho, J.C. Ku, J.I. Kim, K.S. Kim, J.H. Yoo,
H.J. Kim, H.G. Jung, Improvement of characteristics of NbO 2 selector and full integration
of 4F2 2x-nm tech 1S1R ReRAM, in IEEE International Electron Devices Meeting (IEDM),
pp. 10.3.1–10.3.4 (2015)
141. X. Liu, S.K. Nandi, D.K. Venkatachalam, K. Belay, S. Song, R.G. Elliman, Reduced threshold
current in NbO 2 selector by engineering device structure. IEEE Electron Device Lett. 35(10),
1055–1057 (2014)
142. T. Sakata, K. Sakata, G. Höfer, T. Horiuchi, Preparation of NbO 2 single crystals by chemical
transport reaction. J. Cryst. Growth 12(2), 88–92 (1972)
143. J. Park, T. Hadamek, A.B. Posadas, E. Cha, A.A. Demkov, H. Hwang, Multi-layered
NiO y /NbO x /NiO y fast drift-free threshold switch with high I on /I off ratio for selector
application. Sci. Rep. 7, 4068 (2017)
144. S.R. Ovshinsky, Reversible electrical switching phenomena in disordered structures. Phys.
Rev. Lett. 21(20), 1450–1453 (1968)
145. Y. Koo, H. Hwang, Zn 1-x Te x ovonic threshold switching device performance and its correlation
to material parameters. Sci. Rep. 8, 11822 (2018)
146. T. Gao, J. Feng, H. Ma, The ovonic threshold switching characteristics in Si x Te 1-x based
selector devices. Appl. Phys. A 124, 734 (2018)
147. M. Lee, D. Lee, S.-H. Cho, J.-H. Hur, S.-M. Lee, D.H. Seo, D.-S. Kim, M.-S. Yang, S. Lee, E.
Hwang, M.R. Uddin, H. Kim, U.-I. Chung, Y. Park, I.-K. Yoo, A plasma-treated chalcogenide
switch device for stackable scalable 3D nanoscale memory. Nat. Commun. 4, 2629 (2013)
148. H.Y. Cheng, W.C. Chien, I.T. Kuo, E.K. Lai, Y. Zhu, J.L. Jordan-Sweet, A. Ray, F. Carta, F.M.
Lee, P. Tseng, M. Lee, Y. Lin, W. Kim, R. Bruce, C.W. Yeh, C. Yang, M. BrightSky, H. Lung,
An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides
compatible with BEOL IC Integration for cross-point PCM, in IEEE International Electron
Devices Meeting (IEDM), pp. 2.2.1–2.2.4 (2017)
149. M.-J. Lee, D. Lee, H. Kim, H.-S. Choi, J.-B. Park, H.G. Kim, Y.-K. Cha, U.-I. Chung, I.K. Yoo, K. Kim, Highly-scalable threshold switching select device based on chaclogenide
glasses for 3D nanoscaled memory arrays, in IEEE International Electron Devices Meeting
(IEDM), pp. 2.6.1–2.6.3 (2012)
150. M. Alayan, E. Vianello, G. Navarro, C. Carabasse, S. La Barbera, A. Verdy, N. Castellani,
A. Levisse, G. Molas, L. Grenouillet, T. Magis, F. Aussenac, M. Bernard, B. DeSalvo, J.M.
Portal, E. Nowak, In-depth investigation of programming and reading operations in RRAM
cells integrated with Ovonic Threshold Switching (OTS) selectors, in IEEE International
Electron Devices Meeting (IEDM), pp. 2.3.1–2.3.4 (2017)
151. S.H. Jo, T. Kumar, S. Narayanan, W.D. Lu, H. Nazarian, 3D-stackable crossbar resistive memory based on Field Assisted Superlinear Threshold (FAST) selector, in IEEE
International Electron Devices Meeting (IEDM), pp. 6.7.1–6.7.4 (2014)