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121. N. Raghavan, R. Degraeve, A. Fantini, L. Goux, D.J. Wouters, G. Groeseneken, M. Jurczak,
Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its
impact on OFF-state reliability, in Proceedings of the IEEE International Electron Devices
Meeting (IEDM), pp. 21.1.1–21.1.4 (2013)
122. S. Yu, X. Guan, H.-S.P. Wong, On the stochastic nature of resistive switching in metal oxide
RRAM: Physical modeling Monte Carlo simulation and experimental characterization, in
Proceedings of the IEEE International Electron Devices Meeting (IEDM), pp. 17.3.1–17.3.4
(2011)
123. C.-W. Hsu, I.-T. Wang, C.-L. Lo, M.-C. Chiang, W.-Y. Jang, C.-H. Lin, T.-H. Hou, Selfrectifying bipolar TaO x /TiO 2 RRAM with superior endurance over 10e12cycles for 3D highdensity storage-class memory, in Technical Digest VLSI Symposium, pp. 166–167 (2013)
124. C.-W. Hsu, Y.-F. Wang, C.-C. Wan, I.-T. Wang, C.-T. Chou, W.-L. Lai, Y.-J. Lee, T.-H.
Hou, Homogeneous barrier modulation of TaO x /TiO 2 bilayers for ultra-high endurance threedimensional storage-class memory. Nanotechnology 25(16), 165202 (2014)
125. C.-W. Hsu, C.-C. Wan, I.-T. Wang, M.-C. Chen, C.-L. Lo, Y.-J. Lee, W.-Y. Jang, C.-H. Lin,
T.-H. Hou, 3D vertical TaO x /TiO 2 RRAM with over 10e3 self-rectifying ratio and sub-μA
operating current, in Proceedings of the IEEE International Electron Devices Meeting (IEDM),
pp. 10.4.1–10.4.4 (2013)
126. Q. Luo, X. Xu, T. Gong, H. Lv, D. Dong, H. Ma, P. Yuan, J. Gao, J. Liu, Z. Yu, J. Li,
S. Long, Q. Liu, M. Liu, 8-Layers 3D vertical RRAM with excellent scalability towards
storage class memory applications, in IEEE International Electron Devices Meeting (IEDM),
pp. 2.7.1–2.7.4 (2017)
127. X. Peng, R. Madler, P.-Y. Chen, S. Yu, Cross-point memory design challenges and survey of
selector device characteristics. J. Comput. Electron. 16(4), 1167–1174 (2017)
128. J.-J. Huang, Y.-M. Tseng, W.-C. Luo, C.-W. Hsu, T.-H. Hou, One selector-one resistor
(1s1r) crossbar array for high-density flexible memory applications, Proceedings of the IEEE
International Electron Devices Meeting (IEDM), pp. 31.7.1–31.7.4 (2011)
129. J.-J. Huang, Y.-M. Tseng, C.-W. Hsu, T.-H. Hou, Bipolar nonlinear Ni/TiO 2 /Ni selector for
1S1R crossbar array applications. IEEE Electron Device Lett. 32(10), 1427–1429 (2011)
130. J. Shin, I. Kim, K.P. Biju, M. Jo, J. Park, J. Lee, S. Jung, W. Lee, S. Kim, S. Park, H.
Hwang, TiO 2 -based metal-insulator-metal selection device for bipolar resistive random access
memory cross-point application. J. Appl. Phys. 109, 033712 (2011)
131. B. Govoreanu, C. Adelmann, A. Redolfi, L. Zhang, S. Clima, M. Jurczak, High-performance
metal-insulator-metal tunnel diode selectors. IEEE Electron Device Lett. 35(1), 63–65 (2014)
132. J. Woo, J. Song, K. Moon, J.H. Lee, E. Cha, A. Prakash, D. Lee, S. Lee, S. Park, Y. Koo,
C.G. Park, H. Hwang, Electrical and reliability characteristics of a scaled (~30 nm) tunnel
barrier selector (W/Ta 2 O 5 /TaO x /TiO 2 /TiN) with excellent performance (JMAX > 107A/cm2),
in Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, pp. 1–2
(2014)
133. U. Chand, K.C. Huang, C.Y. Huang, T.Y. Tseng, Mechanism of Nonlinear Switching in HfO 2 -
Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer. IEEE Trans.
Electron Devices 62(11), 3665–3670 (2015)
134. B.J. Choi, J. Zhang, K. Norris, G. Gibson, K.M. Kim, W. Jackson, M.M. Zhang, Z. Li, J.J.
Yang, R.S. Williams, Trilayer tunnel selectors for memristor memory cells. Adv. Mater. 28,
356–362 (2016)
135. M. Son, J. Lee, J. Park, J. Shin, G. Choi, S. Jung, W. Lee, S. Kim, S. Park, H. Hwang, Excellent
selector characteristics of nanoscale VO2 for high-density bipolar ReRAM applications. IEEE
Electron Device Letter 32(11), 1579–1581 (2011)
136. K. Zhang, B. Wang, F. Wang, Y. Han, X. Jian, H. Zhang, H.S.P. Wong, VO2-based selection
device for passive resistive random access memory application. IEEE Electron Device Lett.
37(8), 978–981 (2016)
137. I.P. Radu, B. Govoreanu, K. Marten, M. Toeller, A.P. Peter, M.R. Ikram, L.Q. Zhang, H. Hody,
W. Kim, P. Favia, T. Conard, H.Y. Chou, B. Put, V.V. Afanasiev, A. Stesmans, A. Heyns, S.D.
Gendt, M. Jurczak, Vanadium dioxide for selector applications. ECS Trans. 58(7), 249–258
(2013)
V. Y. Zhuo et al.
121. N. Raghavan, R. Degraeve, A. Fantini, L. Goux, D.J. Wouters, G. Groeseneken, M. Jurczak,
Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its
impact on OFF-state reliability, in Proceedings of the IEEE International Electron Devices
Meeting (IEDM), pp. 21.1.1–21.1.4 (2013)
122. S. Yu, X. Guan, H.-S.P. Wong, On the stochastic nature of resistive switching in metal oxide
RRAM: Physical modeling Monte Carlo simulation and experimental characterization, in
Proceedings of the IEEE International Electron Devices Meeting (IEDM), pp. 17.3.1–17.3.4
(2011)
123. C.-W. Hsu, I.-T. Wang, C.-L. Lo, M.-C. Chiang, W.-Y. Jang, C.-H. Lin, T.-H. Hou, Selfrectifying bipolar TaO x /TiO 2 RRAM with superior endurance over 10e12cycles for 3D highdensity storage-class memory, in Technical Digest VLSI Symposium, pp. 166–167 (2013)
124. C.-W. Hsu, Y.-F. Wang, C.-C. Wan, I.-T. Wang, C.-T. Chou, W.-L. Lai, Y.-J. Lee, T.-H.
Hou, Homogeneous barrier modulation of TaO x /TiO 2 bilayers for ultra-high endurance threedimensional storage-class memory. Nanotechnology 25(16), 165202 (2014)
125. C.-W. Hsu, C.-C. Wan, I.-T. Wang, M.-C. Chen, C.-L. Lo, Y.-J. Lee, W.-Y. Jang, C.-H. Lin,
T.-H. Hou, 3D vertical TaO x /TiO 2 RRAM with over 10e3 self-rectifying ratio and sub-μA
operating current, in Proceedings of the IEEE International Electron Devices Meeting (IEDM),
pp. 10.4.1–10.4.4 (2013)
126. Q. Luo, X. Xu, T. Gong, H. Lv, D. Dong, H. Ma, P. Yuan, J. Gao, J. Liu, Z. Yu, J. Li,
S. Long, Q. Liu, M. Liu, 8-Layers 3D vertical RRAM with excellent scalability towards
storage class memory applications, in IEEE International Electron Devices Meeting (IEDM),
pp. 2.7.1–2.7.4 (2017)
127. X. Peng, R. Madler, P.-Y. Chen, S. Yu, Cross-point memory design challenges and survey of
selector device characteristics. J. Comput. Electron. 16(4), 1167–1174 (2017)
128. J.-J. Huang, Y.-M. Tseng, W.-C. Luo, C.-W. Hsu, T.-H. Hou, One selector-one resistor
(1s1r) crossbar array for high-density flexible memory applications, Proceedings of the IEEE
International Electron Devices Meeting (IEDM), pp. 31.7.1–31.7.4 (2011)
129. J.-J. Huang, Y.-M. Tseng, C.-W. Hsu, T.-H. Hou, Bipolar nonlinear Ni/TiO 2 /Ni selector for
1S1R crossbar array applications. IEEE Electron Device Lett. 32(10), 1427–1429 (2011)
130. J. Shin, I. Kim, K.P. Biju, M. Jo, J. Park, J. Lee, S. Jung, W. Lee, S. Kim, S. Park, H.
Hwang, TiO 2 -based metal-insulator-metal selection device for bipolar resistive random access
memory cross-point application. J. Appl. Phys. 109, 033712 (2011)
131. B. Govoreanu, C. Adelmann, A. Redolfi, L. Zhang, S. Clima, M. Jurczak, High-performance
metal-insulator-metal tunnel diode selectors. IEEE Electron Device Lett. 35(1), 63–65 (2014)
132. J. Woo, J. Song, K. Moon, J.H. Lee, E. Cha, A. Prakash, D. Lee, S. Lee, S. Park, Y. Koo,
C.G. Park, H. Hwang, Electrical and reliability characteristics of a scaled (~30 nm) tunnel
barrier selector (W/Ta 2 O 5 /TaO x /TiO 2 /TiN) with excellent performance (JMAX > 107A/cm2),
in Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, pp. 1–2
(2014)
133. U. Chand, K.C. Huang, C.Y. Huang, T.Y. Tseng, Mechanism of Nonlinear Switching in HfO 2 -
Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer. IEEE Trans.
Electron Devices 62(11), 3665–3670 (2015)
134. B.J. Choi, J. Zhang, K. Norris, G. Gibson, K.M. Kim, W. Jackson, M.M. Zhang, Z. Li, J.J.
Yang, R.S. Williams, Trilayer tunnel selectors for memristor memory cells. Adv. Mater. 28,
356–362 (2016)
135. M. Son, J. Lee, J. Park, J. Shin, G. Choi, S. Jung, W. Lee, S. Kim, S. Park, H. Hwang, Excellent
selector characteristics of nanoscale VO2 for high-density bipolar ReRAM applications. IEEE
Electron Device Letter 32(11), 1579–1581 (2011)
136. K. Zhang, B. Wang, F. Wang, Y. Han, X. Jian, H. Zhang, H.S.P. Wong, VO2-based selection
device for passive resistive random access memory application. IEEE Electron Device Lett.
37(8), 978–981 (2016)
137. I.P. Radu, B. Govoreanu, K. Marten, M. Toeller, A.P. Peter, M.R. Ikram, L.Q. Zhang, H. Hody,
W. Kim, P. Favia, T. Conard, H.Y. Chou, B. Put, V.V. Afanasiev, A. Stesmans, A. Heyns, S.D.
Gendt, M. Jurczak, Vanadium dioxide for selector applications. ECS Trans. 58(7), 249–258
(2013)