Resistive Random Access Memory Device …
341
102. Y. Yang, Y. Takahashi, A. Tsurumaki-Fukuchi, M. Arita, M. Moors, M. Buckwell, A. Mehonic,
A.J.J. Kenyon, Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices. J. Electroceram. 39(1–4), 73–93
(2017)
103. W.A. Hubbard, A. Kerelsky, G. Jasmin, E.R. White, J. Lodico, M. Mecklenburg, B.C. Regan,
Nanofilament formation and regeneration during Cu/Al 2 O 3 resistive memory switching. Nano
Lett. 15(6), 3983–3987 (2015)
104. S.-J. Choi, G.-S. Park, K.-H. Kim, S. Cho, W.-Y. Yang, X.-S. Li, J.-H. Moon, K.-J. Lee, K.
Kim, In situ observation of voltage-induced multilevel resistive switching in solid electrolyte
memory. Adv. Mater. 23, 3273 (2011)
105. X.Z. Tian, S.Z. Yang, M. Zeng, L.F. Wang, J.K. Wei, Z. Xu, W.L. Wang, X.D. Bai, Bipolar
electrochemical mechanism for mass transfer in nanoionic resistive memories. Adv. Mater.
26, 3649 (2014)
106. Q. Liu, J. Sun, H. Lv, S. Long, K. Yin, N. Wan, Y. Li, L. Sun, M. Liu, Real-time observation
on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.
Adv. Mater. 24(14), 1844–9 (2012)
107. Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, W. Lu, Observation of conducting filament growth
in nanoscale resistive memories. Nat. Commun. 3, 732 (2012)
108. U. Celano, L. Goux, A. Belmonte, K. Opsomer, A. Franquet, A. Schulze, C. Detavernier, O.
Richard, H. Bender, M. Jurczak, Three-dimensional observation of the conductive filament
in nanoscaled resistive memory devices. Nano Lett. 14, 2401 (2014)
109. Y. Yang, P. Gao, L. Li, X. Pan, S. Tappertzhofen, S. Choi, R. Waser, I. Valov, W.D. Lu,
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nat Commun. 5,
4232 (2014)
110. C.P. Hsiung, H.W. Liao, J.Y. Gan, T.B. Wu, J.C. Hwang, F. Chen, M.J. Tsai, Formation and
instability of silver nanofilament in Ag-based programmable metallization cells. ACS Nano
4, 5414 (2010)
111. Z. Xu, Y. Bando, W. Wang, X. Bai, D. Golberg, Real-time in situ HRTEM-resolved resistance
switching of Ag 2 S nanoscale ionic conductor. ACS Nano 4, 2515–2522 (2010)
112. E. Linn, R. Rosezin, C. Kügeler, R. Waser, Complementary resistive switches for passive
nanocrossbar memories. Nat. Mater. 9(5), 403–406 (2010)
113. P. Kapur, J.P. McVittie, K.C. Saraswat, Technology and reliability constrained future copper
interconnects—Part I: Resistance modeling. IEEE Trans. Electron Devices 49, 590–597
(2002)
114. A.K. Geim, K.S. Novoselov, The rise of graphene. Nat. Mater. 6, 183–191 (2007)
115. S. Yu, Y. Deng, B. Gao, P. Huang, B. Chen, X. Liu, J. Kang, H.-Y. Chen, Z. Jiang, H.-S.P. Wong,
Design Guidelines for 3D RRAM Cross-Point Architecture, in 2014 IEEE International
Symposium on Circuits and Systems (ISCAS), pp. 421–424 (2014)
116. G.W. Burr, R.S. Shenoy, K. Virwani, P. Narayanan, A. Padilla, B. Kurdi, Access devices for
3D crosspoint memory. J. Vac. Sci. Technol. 32(4), 040802 (2014)
117. R. Rosezin, E. Linn, L. Nielen, C. Kugeler, R. Bruchhaus, R. Waser, Integrated complementary
resistive switches for passive high-density nanocrossbar arrays. IEEE Electron Device Lett.
32(2), 191–193 (2011)
118. J. Lee, J. Shin, D. Lee, W. Lee, S. Jung, M. Jo, J. Park, K.P. Biju, S. Kim, S. Park, H. Hwang,
Diode-less nano-scale ZrO x /HfO x RRAM device with excellent switching uniformity and
reliability for high-density cross-point memory applications, in Proceedings of the IEEE
Electron Devices Meeting (IEDM) (2010)
119. D.J. Wouters, L. Zhang, A. Fantini, R. Degraeve, L. Goux, Y.Y. Chen, B. Govoreanu, G.S.
Kar, G.V. Groeseneken, M. Jurczak, Analysis of complementary RRAM switching. IEEE
Electron Device Lett. 33(8), 1186–1188 (2012)
120. A. Fantini, L. Goux, R. Degraeve, D.J. Wouters, N. Raghavan, G. Kar, A. Belmonte, Y.Y. Chen, B. Govoreanu and M. Jurczak, Intrinsic switching variability in HfO 2 RRAM, in
Proceedings of the 5th IEEE International Memory Workshop (IMW) (2013)
341
102. Y. Yang, Y. Takahashi, A. Tsurumaki-Fukuchi, M. Arita, M. Moors, M. Buckwell, A. Mehonic,
A.J.J. Kenyon, Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices. J. Electroceram. 39(1–4), 73–93
(2017)
103. W.A. Hubbard, A. Kerelsky, G. Jasmin, E.R. White, J. Lodico, M. Mecklenburg, B.C. Regan,
Nanofilament formation and regeneration during Cu/Al 2 O 3 resistive memory switching. Nano
Lett. 15(6), 3983–3987 (2015)
104. S.-J. Choi, G.-S. Park, K.-H. Kim, S. Cho, W.-Y. Yang, X.-S. Li, J.-H. Moon, K.-J. Lee, K.
Kim, In situ observation of voltage-induced multilevel resistive switching in solid electrolyte
memory. Adv. Mater. 23, 3273 (2011)
105. X.Z. Tian, S.Z. Yang, M. Zeng, L.F. Wang, J.K. Wei, Z. Xu, W.L. Wang, X.D. Bai, Bipolar
electrochemical mechanism for mass transfer in nanoionic resistive memories. Adv. Mater.
26, 3649 (2014)
106. Q. Liu, J. Sun, H. Lv, S. Long, K. Yin, N. Wan, Y. Li, L. Sun, M. Liu, Real-time observation
on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.
Adv. Mater. 24(14), 1844–9 (2012)
107. Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, W. Lu, Observation of conducting filament growth
in nanoscale resistive memories. Nat. Commun. 3, 732 (2012)
108. U. Celano, L. Goux, A. Belmonte, K. Opsomer, A. Franquet, A. Schulze, C. Detavernier, O.
Richard, H. Bender, M. Jurczak, Three-dimensional observation of the conductive filament
in nanoscaled resistive memory devices. Nano Lett. 14, 2401 (2014)
109. Y. Yang, P. Gao, L. Li, X. Pan, S. Tappertzhofen, S. Choi, R. Waser, I. Valov, W.D. Lu,
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nat Commun. 5,
4232 (2014)
110. C.P. Hsiung, H.W. Liao, J.Y. Gan, T.B. Wu, J.C. Hwang, F. Chen, M.J. Tsai, Formation and
instability of silver nanofilament in Ag-based programmable metallization cells. ACS Nano
4, 5414 (2010)
111. Z. Xu, Y. Bando, W. Wang, X. Bai, D. Golberg, Real-time in situ HRTEM-resolved resistance
switching of Ag 2 S nanoscale ionic conductor. ACS Nano 4, 2515–2522 (2010)
112. E. Linn, R. Rosezin, C. Kügeler, R. Waser, Complementary resistive switches for passive
nanocrossbar memories. Nat. Mater. 9(5), 403–406 (2010)
113. P. Kapur, J.P. McVittie, K.C. Saraswat, Technology and reliability constrained future copper
interconnects—Part I: Resistance modeling. IEEE Trans. Electron Devices 49, 590–597
(2002)
114. A.K. Geim, K.S. Novoselov, The rise of graphene. Nat. Mater. 6, 183–191 (2007)
115. S. Yu, Y. Deng, B. Gao, P. Huang, B. Chen, X. Liu, J. Kang, H.-Y. Chen, Z. Jiang, H.-S.P. Wong,
Design Guidelines for 3D RRAM Cross-Point Architecture, in 2014 IEEE International
Symposium on Circuits and Systems (ISCAS), pp. 421–424 (2014)
116. G.W. Burr, R.S. Shenoy, K. Virwani, P. Narayanan, A. Padilla, B. Kurdi, Access devices for
3D crosspoint memory. J. Vac. Sci. Technol. 32(4), 040802 (2014)
117. R. Rosezin, E. Linn, L. Nielen, C. Kugeler, R. Bruchhaus, R. Waser, Integrated complementary
resistive switches for passive high-density nanocrossbar arrays. IEEE Electron Device Lett.
32(2), 191–193 (2011)
118. J. Lee, J. Shin, D. Lee, W. Lee, S. Jung, M. Jo, J. Park, K.P. Biju, S. Kim, S. Park, H. Hwang,
Diode-less nano-scale ZrO x /HfO x RRAM device with excellent switching uniformity and
reliability for high-density cross-point memory applications, in Proceedings of the IEEE
Electron Devices Meeting (IEDM) (2010)
119. D.J. Wouters, L. Zhang, A. Fantini, R. Degraeve, L. Goux, Y.Y. Chen, B. Govoreanu, G.S.
Kar, G.V. Groeseneken, M. Jurczak, Analysis of complementary RRAM switching. IEEE
Electron Device Lett. 33(8), 1186–1188 (2012)
120. A. Fantini, L. Goux, R. Degraeve, D.J. Wouters, N. Raghavan, G. Kar, A. Belmonte, Y.Y. Chen, B. Govoreanu and M. Jurczak, Intrinsic switching variability in HfO 2 RRAM, in
Proceedings of the 5th IEEE International Memory Workshop (IMW) (2013)