340
V. Y. Zhuo et al.
81. S. Yu, Y. Wu, H.-S.P. Wong, Investigating the switching dynamics and multilevel capability
of bipolar metal oxide resistive switching memory. Appl. Phys. Lett. 98, 103514 (2011)
82. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, Filament Conduction and Reset Mechanism in
NiO-Based Resistive-Switching Memory (RRAM) Devices. IEEE Trans. Electron Devices
56, 186 (2009)
83. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, S. Spiga, M. Perego, M. Fanciulli, Conductivefilament switching analysis and self-accelerated thermal dissolution model for reset in NiObased RRAM. IEDM Tech. Dig. 2, 775 (2007)
84. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, Self-accelerated thermal dissolution model for
reset programming in unipolar resistive-switching memory (RRAM) devices. IEEE Trans.
Electron Devices 56, 193 (2009)
85. D. Panda, P.P. Sahu, Thermal assisted reset modelling in nickel oxide based unipolar resistive
switching. J. Appl. Phys. 121, 204504 (2017)
86. M.-J. Lee, C.B. Lee, D. Lee, S.R. Lee, M. Chang, J.H. Hur, Y.-B. Kim, C.-J. Kim, D.H. Seo, S.
Seo, U.I. Chung, I.-K. Yoo, A fast, high-endurance and scalable non-volatile memory device
made from asymmetric Ta 2 O (5−x) /TaO (2−x) bilayer structures. Nat. Mater. 10, 625 (2011)
87. H.Y. Lee, Y.S. Chen, P.S. Chen, P.Y. Gu, Y.Y. Hsu, S.M. Wang, W.H. Liu, C.H. Tsai, S.S.
Sheu, P.C. Chiang, W.P. Lin, C.H. Lin, W.S. Chen, F.T. Chen, C.H. Lien, M.-J. Tsai, Evidence
and solution of over-RESET problem for HfO x based resistive memory with sub-ns switching
speed and high endurance (2010)
88. Y. Hirose, H. Hirose, Polarity-dependent memory switching and behavior of Ag dendrite in
Ag-photodoped amorphous As2S3 films. J. Appl. Phys. 47, 2767–2772 (1976)
89. W.C. West, K. Sieradzki, B. Kardynal, M.N. Kozicki, Equivalent circuit modeling of the Ag
vertical bar As 0.24 S 0.36 Ag 0.40 vertical bar Ag system prepared by photodissolution of Ag. J.
Electrochem. Soc. 145, 2971–2974 (1998)
90. T. Hasegawa, K. Terabe, T. Tsuruoka, M. Aono, Atomic switch: Atom/ ion movement
controlled devices for beyond von-Neumann computers. Adv. Mater. 24, 252–267 (2012)
91. S.H. Jo, K.H. Kim, W. Lu, Programmable resistance switching in nanoscale two-terminal
devices. Nano Lett. 9, 496–500 (2009)
92. U. Russo, D. Kamalanathan, D. Ielmini, A.L. Lacaita, M.N. Kozicki, Study of multilevel
programming in programmable metallization cell (PMC) memory. Electron Dev. IEEE Trans.
on 56, 1040–1047 (2009)
93. N. Banno, T. Sakamoto, T. Hasegawa, K. Terabe, M. Aono, Effect of ion diffusion on switching
voltage of solid-electrolyte nanometer switch. Jpn. J. Appl. Phys. 45, 3666–3668 (2006)
94. I. Valov, I. Sapezanskaia, A. Nayak, T. Tsuruoka, T. Bredow, T. Hasegawa, G. Staikov,
M. Aono, R. Waser, Atomically controlled electrochemical nucleation at superionic solid
electrolyte surfaces. Nat. Mater. 11, 530–535 (2012)
95. K. Terabe, T. Hasegawa, T. Nakayama, M. Aono, Quantized conductance atomic switch.
Nature 433, 47–50 (2005)
96. T. Sakamoto, K. Lister, N. Banno, T. Hasegawa, K. Terabe, M. Aono, Electronic transport in
Ta 2 O 5 resistive switch. Appl. Phys. Lett. 91, 092110 (2007)
97. T. Kever, U. Bottger, C. Schindler, R. Waser, On the origin of bistable resistive switching in
metal organic charge transfer complex memory cells. Appl. Phys. Lett. 91, 083506 (2007)
98. C. Chen, Y.C. Yang, F. Zeng, F. Pan, Bipolar resistive switching in Cu/AlN/ Pt nonvolatile
memory device. Appl. Phys. Lett. 97, 083502–083503 (2010)
99. W.H. Guan, M. Liu, S.B. Long, Q. Liu, W. Wang, On the resistive switching mechanisms of
Cu/ZrO 2 :Cu/Pt. Appl. Phys. Lett. 93, 223506 (2008)
100. T. Liu, M. Verma, Y. Kang, M.K. Orlowski, Coexistence of Bipolar and Unipolar Switching
of Cu and Oxygen Vacancy Nanofilaments in Cu/TaO x /Pt Resistive Devices. ECS Solid State
Lett. 1(1), Q11–Q13 (2012)
101. X. Guo, C. Schindler, S. Menzel, R. Waser, Understanding the switching-off mechanism
in Ag+ migration based resistively switching model systems. Appl. Phys. Lett. 91, 133513
(2007)
V. Y. Zhuo et al.
81. S. Yu, Y. Wu, H.-S.P. Wong, Investigating the switching dynamics and multilevel capability
of bipolar metal oxide resistive switching memory. Appl. Phys. Lett. 98, 103514 (2011)
82. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, Filament Conduction and Reset Mechanism in
NiO-Based Resistive-Switching Memory (RRAM) Devices. IEEE Trans. Electron Devices
56, 186 (2009)
83. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, S. Spiga, M. Perego, M. Fanciulli, Conductivefilament switching analysis and self-accelerated thermal dissolution model for reset in NiObased RRAM. IEDM Tech. Dig. 2, 775 (2007)
84. U. Russo, D. Ielmini, C. Cagli, A.L. Lacaita, Self-accelerated thermal dissolution model for
reset programming in unipolar resistive-switching memory (RRAM) devices. IEEE Trans.
Electron Devices 56, 193 (2009)
85. D. Panda, P.P. Sahu, Thermal assisted reset modelling in nickel oxide based unipolar resistive
switching. J. Appl. Phys. 121, 204504 (2017)
86. M.-J. Lee, C.B. Lee, D. Lee, S.R. Lee, M. Chang, J.H. Hur, Y.-B. Kim, C.-J. Kim, D.H. Seo, S.
Seo, U.I. Chung, I.-K. Yoo, A fast, high-endurance and scalable non-volatile memory device
made from asymmetric Ta 2 O (5−x) /TaO (2−x) bilayer structures. Nat. Mater. 10, 625 (2011)
87. H.Y. Lee, Y.S. Chen, P.S. Chen, P.Y. Gu, Y.Y. Hsu, S.M. Wang, W.H. Liu, C.H. Tsai, S.S.
Sheu, P.C. Chiang, W.P. Lin, C.H. Lin, W.S. Chen, F.T. Chen, C.H. Lien, M.-J. Tsai, Evidence
and solution of over-RESET problem for HfO x based resistive memory with sub-ns switching
speed and high endurance (2010)
88. Y. Hirose, H. Hirose, Polarity-dependent memory switching and behavior of Ag dendrite in
Ag-photodoped amorphous As2S3 films. J. Appl. Phys. 47, 2767–2772 (1976)
89. W.C. West, K. Sieradzki, B. Kardynal, M.N. Kozicki, Equivalent circuit modeling of the Ag
vertical bar As 0.24 S 0.36 Ag 0.40 vertical bar Ag system prepared by photodissolution of Ag. J.
Electrochem. Soc. 145, 2971–2974 (1998)
90. T. Hasegawa, K. Terabe, T. Tsuruoka, M. Aono, Atomic switch: Atom/ ion movement
controlled devices for beyond von-Neumann computers. Adv. Mater. 24, 252–267 (2012)
91. S.H. Jo, K.H. Kim, W. Lu, Programmable resistance switching in nanoscale two-terminal
devices. Nano Lett. 9, 496–500 (2009)
92. U. Russo, D. Kamalanathan, D. Ielmini, A.L. Lacaita, M.N. Kozicki, Study of multilevel
programming in programmable metallization cell (PMC) memory. Electron Dev. IEEE Trans.
on 56, 1040–1047 (2009)
93. N. Banno, T. Sakamoto, T. Hasegawa, K. Terabe, M. Aono, Effect of ion diffusion on switching
voltage of solid-electrolyte nanometer switch. Jpn. J. Appl. Phys. 45, 3666–3668 (2006)
94. I. Valov, I. Sapezanskaia, A. Nayak, T. Tsuruoka, T. Bredow, T. Hasegawa, G. Staikov,
M. Aono, R. Waser, Atomically controlled electrochemical nucleation at superionic solid
electrolyte surfaces. Nat. Mater. 11, 530–535 (2012)
95. K. Terabe, T. Hasegawa, T. Nakayama, M. Aono, Quantized conductance atomic switch.
Nature 433, 47–50 (2005)
96. T. Sakamoto, K. Lister, N. Banno, T. Hasegawa, K. Terabe, M. Aono, Electronic transport in
Ta 2 O 5 resistive switch. Appl. Phys. Lett. 91, 092110 (2007)
97. T. Kever, U. Bottger, C. Schindler, R. Waser, On the origin of bistable resistive switching in
metal organic charge transfer complex memory cells. Appl. Phys. Lett. 91, 083506 (2007)
98. C. Chen, Y.C. Yang, F. Zeng, F. Pan, Bipolar resistive switching in Cu/AlN/ Pt nonvolatile
memory device. Appl. Phys. Lett. 97, 083502–083503 (2010)
99. W.H. Guan, M. Liu, S.B. Long, Q. Liu, W. Wang, On the resistive switching mechanisms of
Cu/ZrO 2 :Cu/Pt. Appl. Phys. Lett. 93, 223506 (2008)
100. T. Liu, M. Verma, Y. Kang, M.K. Orlowski, Coexistence of Bipolar and Unipolar Switching
of Cu and Oxygen Vacancy Nanofilaments in Cu/TaO x /Pt Resistive Devices. ECS Solid State
Lett. 1(1), Q11–Q13 (2012)
101. X. Guo, C. Schindler, S. Menzel, R. Waser, Understanding the switching-off mechanism
in Ag+ migration based resistively switching model systems. Appl. Phys. Lett. 91, 133513
(2007)