Resistive Random Access Memory Device …
339
62. C. Baeumer, C. Schmitz, A. Marchewka, D.N. Mueller, R. Valenta, J. Hackl, N. Raab,
S.P. Rogers, M.I. Khan, S. Nemsak, Quantifying redox-induced Schottky barrier variations
in memristive devices via in operando spectromicroscopy with graphene electrodes. Nat.
Commun. 7, 12398 (2016)
63. H. Du, C.-L. Jia, A. Koehl, J. Barthel, R. Dittmann, R. Waser, J. Mayer, Nanosized conducting
filaments formed by atomic-scale defects in redox-based resistive switching memories. Chem.
Mater. 29, 3164–3173 (2017)
64. M. Sowinska, T. Bertaud, D. Walczyk, S. Thiess, M. Schubert, M. Lukosius, W. Drube, C.
Walczyk, T. Schroeder, In-operando and non-destructive analysis of the resistive switching in
the Ti/HfO 2 /TiN-based system by hard x-ray photoelectron spectroscopy. Appl. Phys. Lett.
101, 143501 (2012)
65. U. Celano, J.O.D. Beeck, S. Clima, M. Luebben, P.M. Koenraad, L. Goux, I. Valov, W.
Vandervorst, Direct probing of the dielectric scavenging-layer interface in oxide filamentarybased valence change memory. ACS Appl. Mater. Interfaces. 9, 10820–10824 (2017)
66. G. Niu, M. Schubert, S. Sharath, P. Zaumseil, S. Vogel, C. Wenger, E. Hildebrandt, S.
Bhupathi, E. Perez, L. Alff, Direct probing of the dielectric scavenging-layer interface in
oxide filamentary-based valence change memory. Nanotechnology 28, 215702 (2017)
67. D. Cooper, C. Baeumer, N. Bernier, A. Marchewka, C. La Torre, R.E. Dunin-Borkowski, S.
Menzel, R. Waser, R. Dittmann, Anomalous resistance hysteresis in oxide ReRAM: oxygen
evolution and reincorporation revealed by in situ TEM. Adv. Mater. 29, 1–8 (2017)
68. J. Kwon, A.A. Sharma, C.-Y. Chen, A. Fantini, M. Jurczak, A.A. Herzing, J.A. Bain, Y.N.
Picard, M. Skowronski, Transient thermometry and high-resolution transmission electron
microscopy analysis of filamentary resistive switches. ACS Appl. Mater. Interfaces 8, 20176–
20184 (2016)
69. K.M. Kim, D.S. Jeong, C.S. Hwang, Nanofilamentary resistive switching in binary oxide
system; a review on the present status and outlook. Nanotechnology 22(25), 254002 (2011)
70. D.S. Jeong, H. Schroeder, U. Breuer, R. Waser, Characteristic electroforming behavior in
Pt/TiO 2 /Pt resistive switching cells depending on atmosphere. J. Appl. Phys. 104(12), 123716
(2008)
71. J.J. Yang, F. Miao, M.D. Pickett, D.A. Ohlberg, D.R. Stewart, C.N. Lau, R.S. Williams, The
mechanism of electroforming of metal oxide memristive switches. Nanotechnology 20(21),
215201 (2009)
72. J.-Y. Chen, C.-L. Hsin, C.-H.C.Y.-T.H.S.-J.L.-W.L.-J.C.C.-W. Huang, Dynamic evolution of
conducting nanofilament in resistive switching memories. Nano Lett. 13, 3671–3677 (2013)
73. D.B. Strukov, F. Alibart, R.S. Williams, Thermophoresis/diffusion as a plausible mechanism
for unipolar resistive switching in metal–oxide–metal memristors. Appl. Phys. A 107, 509–518
(2012)
74. S. Kumar, Z. Wang, X. Huang, N. Kumari, N. Davila, J.P. Strachan, D. Vine, A.D. Kilcoyne,
Y. Nishi, R.S. Williams, Conduction channel formation and dissolution due to oxygen
thermophoresis/diffusion in hafnium oxide memristors. ACS Nano 10, 11205–11210 (2016)
75. Z.H. Tan, R. Yang, K. Terabe, X.B. Yin, X.D. Zhang, X. Guo, Synaptic metaplasticity realized
in oxide memristive devices. Adv. Mater. 28 (2016)
76. Y. Yang, X. Zhang, L. Qin, Q. Zeng, X. Qiu, R. Huang, Probing nanoscale oxygen ion motion
in memristive systems. Nat. Commun. 8, 15173 (2017)
77. Y. Jiang, Q. Qi, R. Wang, J. Zhang, Q. Xue, C. Wang, C. Jiang, X. Qiu, Direct observation and
measurement of mobile charge carriers in a monolayer organic semiconductor on a dielectric
substrate. ACS Nano 5, 6195–6201 (2011)
78. S. Wang, R. Wang, X. Wang, D. Zhang, X. Qiu, Nanoscale charge distribution and energy
band modification in defect-patterned graphene. Nanoscale 4, 2651–2657 (2012)
79. J. Zhang, P. Chen, B. Yuan, W. Ji, Z. Cheng, X. Qiu, Real-space identification of intermolecular
bonding with atomic force microscopy. Science 342, 611–614 (2013)
80. S. Menzel, M. Waters, A. Marchewka, U. Böttger, R. Dittmann, R. Waser, Modeling the
universal set/reset characteristics of bipolar RRAM by field- and temperature-driven filament
growth. Adv. Funct. Mater. 21, 4487–4492 (2011)
339
62. C. Baeumer, C. Schmitz, A. Marchewka, D.N. Mueller, R. Valenta, J. Hackl, N. Raab,
S.P. Rogers, M.I. Khan, S. Nemsak, Quantifying redox-induced Schottky barrier variations
in memristive devices via in operando spectromicroscopy with graphene electrodes. Nat.
Commun. 7, 12398 (2016)
63. H. Du, C.-L. Jia, A. Koehl, J. Barthel, R. Dittmann, R. Waser, J. Mayer, Nanosized conducting
filaments formed by atomic-scale defects in redox-based resistive switching memories. Chem.
Mater. 29, 3164–3173 (2017)
64. M. Sowinska, T. Bertaud, D. Walczyk, S. Thiess, M. Schubert, M. Lukosius, W. Drube, C.
Walczyk, T. Schroeder, In-operando and non-destructive analysis of the resistive switching in
the Ti/HfO 2 /TiN-based system by hard x-ray photoelectron spectroscopy. Appl. Phys. Lett.
101, 143501 (2012)
65. U. Celano, J.O.D. Beeck, S. Clima, M. Luebben, P.M. Koenraad, L. Goux, I. Valov, W.
Vandervorst, Direct probing of the dielectric scavenging-layer interface in oxide filamentarybased valence change memory. ACS Appl. Mater. Interfaces. 9, 10820–10824 (2017)
66. G. Niu, M. Schubert, S. Sharath, P. Zaumseil, S. Vogel, C. Wenger, E. Hildebrandt, S.
Bhupathi, E. Perez, L. Alff, Direct probing of the dielectric scavenging-layer interface in
oxide filamentary-based valence change memory. Nanotechnology 28, 215702 (2017)
67. D. Cooper, C. Baeumer, N. Bernier, A. Marchewka, C. La Torre, R.E. Dunin-Borkowski, S.
Menzel, R. Waser, R. Dittmann, Anomalous resistance hysteresis in oxide ReRAM: oxygen
evolution and reincorporation revealed by in situ TEM. Adv. Mater. 29, 1–8 (2017)
68. J. Kwon, A.A. Sharma, C.-Y. Chen, A. Fantini, M. Jurczak, A.A. Herzing, J.A. Bain, Y.N.
Picard, M. Skowronski, Transient thermometry and high-resolution transmission electron
microscopy analysis of filamentary resistive switches. ACS Appl. Mater. Interfaces 8, 20176–
20184 (2016)
69. K.M. Kim, D.S. Jeong, C.S. Hwang, Nanofilamentary resistive switching in binary oxide
system; a review on the present status and outlook. Nanotechnology 22(25), 254002 (2011)
70. D.S. Jeong, H. Schroeder, U. Breuer, R. Waser, Characteristic electroforming behavior in
Pt/TiO 2 /Pt resistive switching cells depending on atmosphere. J. Appl. Phys. 104(12), 123716
(2008)
71. J.J. Yang, F. Miao, M.D. Pickett, D.A. Ohlberg, D.R. Stewart, C.N. Lau, R.S. Williams, The
mechanism of electroforming of metal oxide memristive switches. Nanotechnology 20(21),
215201 (2009)
72. J.-Y. Chen, C.-L. Hsin, C.-H.C.Y.-T.H.S.-J.L.-W.L.-J.C.C.-W. Huang, Dynamic evolution of
conducting nanofilament in resistive switching memories. Nano Lett. 13, 3671–3677 (2013)
73. D.B. Strukov, F. Alibart, R.S. Williams, Thermophoresis/diffusion as a plausible mechanism
for unipolar resistive switching in metal–oxide–metal memristors. Appl. Phys. A 107, 509–518
(2012)
74. S. Kumar, Z. Wang, X. Huang, N. Kumari, N. Davila, J.P. Strachan, D. Vine, A.D. Kilcoyne,
Y. Nishi, R.S. Williams, Conduction channel formation and dissolution due to oxygen
thermophoresis/diffusion in hafnium oxide memristors. ACS Nano 10, 11205–11210 (2016)
75. Z.H. Tan, R. Yang, K. Terabe, X.B. Yin, X.D. Zhang, X. Guo, Synaptic metaplasticity realized
in oxide memristive devices. Adv. Mater. 28 (2016)
76. Y. Yang, X. Zhang, L. Qin, Q. Zeng, X. Qiu, R. Huang, Probing nanoscale oxygen ion motion
in memristive systems. Nat. Commun. 8, 15173 (2017)
77. Y. Jiang, Q. Qi, R. Wang, J. Zhang, Q. Xue, C. Wang, C. Jiang, X. Qiu, Direct observation and
measurement of mobile charge carriers in a monolayer organic semiconductor on a dielectric
substrate. ACS Nano 5, 6195–6201 (2011)
78. S. Wang, R. Wang, X. Wang, D. Zhang, X. Qiu, Nanoscale charge distribution and energy
band modification in defect-patterned graphene. Nanoscale 4, 2651–2657 (2012)
79. J. Zhang, P. Chen, B. Yuan, W. Ji, Z. Cheng, X. Qiu, Real-space identification of intermolecular
bonding with atomic force microscopy. Science 342, 611–614 (2013)
80. S. Menzel, M. Waters, A. Marchewka, U. Böttger, R. Dittmann, R. Waser, Modeling the
universal set/reset characteristics of bipolar RRAM by field- and temperature-driven filament
growth. Adv. Funct. Mater. 21, 4487–4492 (2011)