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41. V.Y.-Q. Zhuo, M. Li, Y. Guo, W. Wang, Y. Yang, Y. Jiang, J. Robertson, CMOS compatible
electrode materials selection in oxide-based memory devices. J. Appl. Phys. 120, 024504
(2016)
42. C.H. Wang, Y.-H. Tsai, K.-C. Lin, M.-F. Chang, Y.-C. King, C.-J. Lin, S.-S. Sheu, Y.-S. Chen,
H.-Y. Lee, F.T. Chen, M.-J. Tsai, Three-dimensional 4F2 ReRAM cell with CMOS logic
compatible process, in IEDM Tech Digest, pp. 664–667 (2010)
43. S. Privitera, G. Bersuker, S. Lombardo, C. Bongiorno, D.C. Gilmer, Conductive filament
structure in HfO 2 resistive switching memory devices. Solid-State Electron. 111, 161 (2015)
44. Z.X. Chen, Z. Fang, Y. Wang, Y. Yang, A. Kamath, X.P. Wang, N. Singh, G.-Q. Lo, D.-L.
Kwong, Y.H. Wu, Impact of Ni concentration on the performance of Ni-Silicide/HfO 2 /TiN
resistive RAM (RRAM) cells. J. Electron. Mater. 43(11), 4193–4198 (2014)
45. X.A. Tran, B. Gao, J.F. Kang, X. Wu, L. Wu, Z. Fang, Z.R. Wang, K.L. Pey, Y.C. Yeo, A.Y.
Du, M. Liu, B.Y. Nguyen, M.F. Li, H.Y. Yu, Self-Rectifying and forming-free unipolar HfO x
based-high performance RRAM built by fab-available material, in IEEE IEDM Technical
Digest, pp. 713–716 (2011)
46. D. Lee, H. Choi, H. Sim, D. Choi, Resistance switching of the nonstoichiometric zirconium
oxide for nonvolatile memory applications. Electron Device Lett. 26(10), 719–721 (2005)
47. H. Zhang, B. Gao, B. Sun, G. Chen, L. Zeng, L. Liu, X. Liu, J. Lu, R. Han, J. Kang, B. Yu,
Ionic doping effect in ZrO 2 resistive switching memory. Appl. Phys. Lett. 96, 123502 (2010)
48. X. Sun, B. Sun, L. Liu, N. Xu, X. Liu, R. Han, J. Kang, G. Xiong, T.P. Ma, Resistive switching
in CeO x films for nonvolatile memory application. IEEE Electron Device Lett. 30(4), 334–336
(2009)
49. T.-M. Pan, C.-H. Lu, Switching behavior in rare-earth films fabricated in full room
temperature. IEEE Trans Electr. Devices 59(4), 956–961 (2012)
50. W. Shen, R. Dittmann, U. Breuer, R. Waser, Improved endurance behavior of resistive
switching in (Ba, Sr)TiO 3 thin films with W top electrode. Appl. Phys. Lett. 93, 222102
(2008)
51. X. Chen, H. Zhang, K. Ruan, W. Shi, Annealing effect on the bipolar resistive switching
behaviors of BiFeO 3 thin films on LaNiO 3 -buffered Si substrates. J. Alloys Compd. 529,
108–112 (2012)
52. S.Q. Liu, N.J. Wu, A. Ignatiev, Electric-pulse-induced reversible resistance change effect in
magnetoresistive films. Appl. Phys. Lett. 76(19), 2749–2751 (2000)
53. X.P. Wang, Z. Fang, Z.X. Chen, A.R. Kamath, L.J. Tang, G.-Q. Lo, D.-L. Kwong, NiContaining Electrodes for Compact Integration of Resistive Random Access Memory With
CMOS. IEEE Electron Device Lett. 34(4), 508–510 (2013)
54. H.J. Hovel, J.J. Urgell, Switching and memory characteristics of ZnSe-Ge heterojunctions. J.
Appl. Phys. 42(12), 5076–5083 (1971)
55. N.G. Patel, Some observations on the switching and memory phenomena in ZnTe-Si. J. Mater.
Sci. 21(6), 2097–2099 (1986)
56. S. Gao, X. Yi, J. Shang, G. Liu, R.-W. Li, Organic and hybrid resistive switching materials
and devices. Chem. Soc. Rev. pp. 1–35 (2018)
57. B.-H. Lee, H. Bae, H. Seong, D.-I. Lee, H. Park, Y.J. Choi, S.-G. Im, S.O. Kim, Y.-K. Choi,
Direct observation of a carbon filament in water-resistant organic memory. ACS Nano 9(7),
7306–7313 (2015)
58. R. Waser, M. Aono, Nanoionics-based resistive switching memories. Nat. Mater. 6(11), 833–
840 (2007)
59. D.-H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, L.X.-S., G.-S. Park, B.
Lee, S. Han, M. Kim, C.S. Hwang, Atomic structure of conducting nanofilaments in TiO 2
resistive switching memory. Nat. Nanotechnol. 5(2), 148–153 (2010)
60. M. Janousch, G.I. Meijer, U. Staub, B. Delley, S.F. Karg, B.P. Andreasson, Role of oxygen
vacancies in Cr-doped SrTiO 3 for resistance-change memory. Adv. Mater. 19(17), 2232–2235
(2007)
61. Y.B. Nian, J. Strozier, N.J. Wu, X. Chen, A. Ignatiev, Evidence for an oxygen diffusion model
for the electric pulse induced resistance change effect in transition-metal oxides. Phys. Rev.
Lett. 98(14), 146403 (2007)
V. Y. Zhuo et al.
41. V.Y.-Q. Zhuo, M. Li, Y. Guo, W. Wang, Y. Yang, Y. Jiang, J. Robertson, CMOS compatible
electrode materials selection in oxide-based memory devices. J. Appl. Phys. 120, 024504
(2016)
42. C.H. Wang, Y.-H. Tsai, K.-C. Lin, M.-F. Chang, Y.-C. King, C.-J. Lin, S.-S. Sheu, Y.-S. Chen,
H.-Y. Lee, F.T. Chen, M.-J. Tsai, Three-dimensional 4F2 ReRAM cell with CMOS logic
compatible process, in IEDM Tech Digest, pp. 664–667 (2010)
43. S. Privitera, G. Bersuker, S. Lombardo, C. Bongiorno, D.C. Gilmer, Conductive filament
structure in HfO 2 resistive switching memory devices. Solid-State Electron. 111, 161 (2015)
44. Z.X. Chen, Z. Fang, Y. Wang, Y. Yang, A. Kamath, X.P. Wang, N. Singh, G.-Q. Lo, D.-L.
Kwong, Y.H. Wu, Impact of Ni concentration on the performance of Ni-Silicide/HfO 2 /TiN
resistive RAM (RRAM) cells. J. Electron. Mater. 43(11), 4193–4198 (2014)
45. X.A. Tran, B. Gao, J.F. Kang, X. Wu, L. Wu, Z. Fang, Z.R. Wang, K.L. Pey, Y.C. Yeo, A.Y.
Du, M. Liu, B.Y. Nguyen, M.F. Li, H.Y. Yu, Self-Rectifying and forming-free unipolar HfO x
based-high performance RRAM built by fab-available material, in IEEE IEDM Technical
Digest, pp. 713–716 (2011)
46. D. Lee, H. Choi, H. Sim, D. Choi, Resistance switching of the nonstoichiometric zirconium
oxide for nonvolatile memory applications. Electron Device Lett. 26(10), 719–721 (2005)
47. H. Zhang, B. Gao, B. Sun, G. Chen, L. Zeng, L. Liu, X. Liu, J. Lu, R. Han, J. Kang, B. Yu,
Ionic doping effect in ZrO 2 resistive switching memory. Appl. Phys. Lett. 96, 123502 (2010)
48. X. Sun, B. Sun, L. Liu, N. Xu, X. Liu, R. Han, J. Kang, G. Xiong, T.P. Ma, Resistive switching
in CeO x films for nonvolatile memory application. IEEE Electron Device Lett. 30(4), 334–336
(2009)
49. T.-M. Pan, C.-H. Lu, Switching behavior in rare-earth films fabricated in full room
temperature. IEEE Trans Electr. Devices 59(4), 956–961 (2012)
50. W. Shen, R. Dittmann, U. Breuer, R. Waser, Improved endurance behavior of resistive
switching in (Ba, Sr)TiO 3 thin films with W top electrode. Appl. Phys. Lett. 93, 222102
(2008)
51. X. Chen, H. Zhang, K. Ruan, W. Shi, Annealing effect on the bipolar resistive switching
behaviors of BiFeO 3 thin films on LaNiO 3 -buffered Si substrates. J. Alloys Compd. 529,
108–112 (2012)
52. S.Q. Liu, N.J. Wu, A. Ignatiev, Electric-pulse-induced reversible resistance change effect in
magnetoresistive films. Appl. Phys. Lett. 76(19), 2749–2751 (2000)
53. X.P. Wang, Z. Fang, Z.X. Chen, A.R. Kamath, L.J. Tang, G.-Q. Lo, D.-L. Kwong, NiContaining Electrodes for Compact Integration of Resistive Random Access Memory With
CMOS. IEEE Electron Device Lett. 34(4), 508–510 (2013)
54. H.J. Hovel, J.J. Urgell, Switching and memory characteristics of ZnSe-Ge heterojunctions. J.
Appl. Phys. 42(12), 5076–5083 (1971)
55. N.G. Patel, Some observations on the switching and memory phenomena in ZnTe-Si. J. Mater.
Sci. 21(6), 2097–2099 (1986)
56. S. Gao, X. Yi, J. Shang, G. Liu, R.-W. Li, Organic and hybrid resistive switching materials
and devices. Chem. Soc. Rev. pp. 1–35 (2018)
57. B.-H. Lee, H. Bae, H. Seong, D.-I. Lee, H. Park, Y.J. Choi, S.-G. Im, S.O. Kim, Y.-K. Choi,
Direct observation of a carbon filament in water-resistant organic memory. ACS Nano 9(7),
7306–7313 (2015)
58. R. Waser, M. Aono, Nanoionics-based resistive switching memories. Nat. Mater. 6(11), 833–
840 (2007)
59. D.-H. Kwon, K.M. Kim, J.H. Jang, J.M. Jeon, M.H. Lee, G.H. Kim, L.X.-S., G.-S. Park, B.
Lee, S. Han, M. Kim, C.S. Hwang, Atomic structure of conducting nanofilaments in TiO 2
resistive switching memory. Nat. Nanotechnol. 5(2), 148–153 (2010)
60. M. Janousch, G.I. Meijer, U. Staub, B. Delley, S.F. Karg, B.P. Andreasson, Role of oxygen
vacancies in Cr-doped SrTiO 3 for resistance-change memory. Adv. Mater. 19(17), 2232–2235
(2007)
61. Y.B. Nian, J. Strozier, N.J. Wu, X. Chen, A. Ignatiev, Evidence for an oxygen diffusion model
for the electric pulse induced resistance change effect in transition-metal oxides. Phys. Rev.
Lett. 98(14), 146403 (2007)