Resistive Random Access Memory Device …
337
19. M. Hu, H. Li, Q. Wu, G. S. Rose, Hardware realization of BSB recall function using memristor
crossbar arrays, Proceedings of the Design Automation Conference (DAC), pp. 498–503
(2012)
20. M. Prezioso, F. Merrikh-Bayat, B.D. Hoskins, G.C. Adam, K.K. Likharev, D.B. Strukov,
Training and operation of an integrated neuromorphic network based on metal-oxide
memristors. Nature 521, 61–64 (2015)
21. P.M. Sheridan, F. Cai, C. Du, W. Ma, Z. Zhang, W.D. Lu, Sparse coding with memristor
networks. Nature Nanotechnol. 12, 784–789 (2017)
22. P. Yao, H. Wu, B. Gao, S.B. Eryilmaz, X. Huang, W. Zhang, Q. Zhang, N. Deng, L. Shi,
H.-S.P. Wong, H. Qian, Face classification using electronic synapses. Nature Commun. 8,
15199 (2017)
23. S. Yu, Binary neural network with 16 Mb RRAM macro chip for classification and online
training, in IEDM Technical Digest (2016)
24. H.-S.P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F.T. Chen, M.-J. Tsai,
Metal–Oxide RRAM, in Proceedings of the IEEE, pp. 1951–1970 (2012)
25. D.S. Jeong, R. Thomas, R. Katiyar, J. Scott, H. Kohlstedt, A. Petraru, C.S. Hwang, Emerging
memories: resistive switching mechanisms and current status. Rep. Prog. Phys. 75, 076502
(2012)
26. J.J. Yang, D.B. Strukov, D.R. Stewart, Memristive devices for computing. Nat. Nanotechnol.
8, 13–24 (2013)
27. K. Szot, W. Speier, G. Bihlmayer, R. Waser, Switching the electrical resistance of individual
dislocations in single-crystalline SrTiO3. Nat. Mater. 5, 312–320 (2006)
28. K. Shibuya, R. Dittmann, S. Mi, R. Waser, Impact of defect distribution on resistive switching
characteristics of Sr 2 TiO 4 thin films. Adv. Mater. 22, 411–414 (2010)
29. A. Sawa, Resistive switching in transition metal oxides. Mater. Today 11, 28–36 (2008)
30. V.Y.-Q. Zhuo, Y. Jiang, M.H. Li, E.K. Chua, Z. Zhang, J.S. Pan, R. Zhao, L.P. Shi, Y. Yang,
T.C. Chong, J. Robertson, Band alignment between Ta 2 O 5 and metals for resistive random
access memory. Appl. Phys. Lett. 102, 062106 (2013)
31. V.Y.-Q. Zhuo, M.-H. Li, Y. Jiang, Electrode effects on the current conduction mechanisms in
TaO x -based RRAM, in IEEE International Conference on Electron Devices and Solid-State
Circuits (EDSSC) (2015)
32. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Memristive
switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3, 429 (2008)
33. J.P. Strachan, M.D. Pickett, J.J. Yang, S. Aloni, A.L.D. Kilcoyne, G. Medeiros-Ribeiro, R.S.
Williams, Direct identification of the conducting channels in a functioning memristive device.
Adv. Mater. 22(32), 3573–3577 (2010)
34. I. Valov, R. Waser, J.R. Jameson, M.N. Kozicki, Electrochemical metallization memories—
fundamentals, applications, prospects. Nanotechnology 22(28), 289502 (2011)
35. W. Lu, D.S. Jeong, M. Kozicki, R. Waser, Electrochemical metallization cells—blending
nanoionics into nanoelectronics?, MRS Bull. 37(2), 124–130 (2012)
36. S. Yu, X. Guan, H.-S.P. Wong, Conduction mechanism of TiN/HfO x /Pt resistive switching
memory: a trap-assisted-tunneling model. Appl. Phys. Lett. 99, 063507 (2011)
37. Y.-M. Kim, J.-S. Lee, Reproducible resistance switching characteristics of hafnium oxidebased nonvolatile memory devices. J. Appl. Phys. 104, 114115 (2008)
38. W.-Y. Chang, Y.-C. Lai, T.-B. Wu, S.-F. Wang, F. Chen, M.-J. Tsai, Unipolar resistive switching
characteristics of ZnO thin films for nonvolatile memory applications. Appl. Phys. Lett. 92,
022110 (2008)
39. B.J. Choi, D.S. Jeong, S.K. Kim, C. Rohde, S. Choi, J.H. Oh, H.J. Kim, C.S. Hwang, K.
Szot, R. Waser, B. Reichenberg, S. Tiedke, Resistive switching mechanism of TiO 2 thin films
grown by atomic-layer deposition. J. Appl. Phys. 98(3), 033715 (2005)
40. F. Miao, J.P. Strachan, J.J. Yang, M.X. Zhang, I. Goldfarb, A.C. Torrezan, P. Eschbach, R.D.
Kelley, G. Medeiros-Ribeiro, R.S. Williams, Anatomy of a nanoscale conduction channel
reveals the mechanism of a high-performance memristor. Adv. Mater. 23, 5633 (2011)
337
19. M. Hu, H. Li, Q. Wu, G. S. Rose, Hardware realization of BSB recall function using memristor
crossbar arrays, Proceedings of the Design Automation Conference (DAC), pp. 498–503
(2012)
20. M. Prezioso, F. Merrikh-Bayat, B.D. Hoskins, G.C. Adam, K.K. Likharev, D.B. Strukov,
Training and operation of an integrated neuromorphic network based on metal-oxide
memristors. Nature 521, 61–64 (2015)
21. P.M. Sheridan, F. Cai, C. Du, W. Ma, Z. Zhang, W.D. Lu, Sparse coding with memristor
networks. Nature Nanotechnol. 12, 784–789 (2017)
22. P. Yao, H. Wu, B. Gao, S.B. Eryilmaz, X. Huang, W. Zhang, Q. Zhang, N. Deng, L. Shi,
H.-S.P. Wong, H. Qian, Face classification using electronic synapses. Nature Commun. 8,
15199 (2017)
23. S. Yu, Binary neural network with 16 Mb RRAM macro chip for classification and online
training, in IEDM Technical Digest (2016)
24. H.-S.P. Wong, H.-Y. Lee, S. Yu, Y.-S. Chen, Y. Wu, P.-S. Chen, B. Lee, F.T. Chen, M.-J. Tsai,
Metal–Oxide RRAM, in Proceedings of the IEEE, pp. 1951–1970 (2012)
25. D.S. Jeong, R. Thomas, R. Katiyar, J. Scott, H. Kohlstedt, A. Petraru, C.S. Hwang, Emerging
memories: resistive switching mechanisms and current status. Rep. Prog. Phys. 75, 076502
(2012)
26. J.J. Yang, D.B. Strukov, D.R. Stewart, Memristive devices for computing. Nat. Nanotechnol.
8, 13–24 (2013)
27. K. Szot, W. Speier, G. Bihlmayer, R. Waser, Switching the electrical resistance of individual
dislocations in single-crystalline SrTiO3. Nat. Mater. 5, 312–320 (2006)
28. K. Shibuya, R. Dittmann, S. Mi, R. Waser, Impact of defect distribution on resistive switching
characteristics of Sr 2 TiO 4 thin films. Adv. Mater. 22, 411–414 (2010)
29. A. Sawa, Resistive switching in transition metal oxides. Mater. Today 11, 28–36 (2008)
30. V.Y.-Q. Zhuo, Y. Jiang, M.H. Li, E.K. Chua, Z. Zhang, J.S. Pan, R. Zhao, L.P. Shi, Y. Yang,
T.C. Chong, J. Robertson, Band alignment between Ta 2 O 5 and metals for resistive random
access memory. Appl. Phys. Lett. 102, 062106 (2013)
31. V.Y.-Q. Zhuo, M.-H. Li, Y. Jiang, Electrode effects on the current conduction mechanisms in
TaO x -based RRAM, in IEEE International Conference on Electron Devices and Solid-State
Circuits (EDSSC) (2015)
32. J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Memristive
switching mechanism for metal/oxide/metal nanodevices. Nat. Nanotechnol. 3, 429 (2008)
33. J.P. Strachan, M.D. Pickett, J.J. Yang, S. Aloni, A.L.D. Kilcoyne, G. Medeiros-Ribeiro, R.S.
Williams, Direct identification of the conducting channels in a functioning memristive device.
Adv. Mater. 22(32), 3573–3577 (2010)
34. I. Valov, R. Waser, J.R. Jameson, M.N. Kozicki, Electrochemical metallization memories—
fundamentals, applications, prospects. Nanotechnology 22(28), 289502 (2011)
35. W. Lu, D.S. Jeong, M. Kozicki, R. Waser, Electrochemical metallization cells—blending
nanoionics into nanoelectronics?, MRS Bull. 37(2), 124–130 (2012)
36. S. Yu, X. Guan, H.-S.P. Wong, Conduction mechanism of TiN/HfO x /Pt resistive switching
memory: a trap-assisted-tunneling model. Appl. Phys. Lett. 99, 063507 (2011)
37. Y.-M. Kim, J.-S. Lee, Reproducible resistance switching characteristics of hafnium oxidebased nonvolatile memory devices. J. Appl. Phys. 104, 114115 (2008)
38. W.-Y. Chang, Y.-C. Lai, T.-B. Wu, S.-F. Wang, F. Chen, M.-J. Tsai, Unipolar resistive switching
characteristics of ZnO thin films for nonvolatile memory applications. Appl. Phys. Lett. 92,
022110 (2008)
39. B.J. Choi, D.S. Jeong, S.K. Kim, C. Rohde, S. Choi, J.H. Oh, H.J. Kim, C.S. Hwang, K.
Szot, R. Waser, B. Reichenberg, S. Tiedke, Resistive switching mechanism of TiO 2 thin films
grown by atomic-layer deposition. J. Appl. Phys. 98(3), 033715 (2005)
40. F. Miao, J.P. Strachan, J.J. Yang, M.X. Zhang, I. Goldfarb, A.C. Torrezan, P. Eschbach, R.D.
Kelley, G. Medeiros-Ribeiro, R.S. Williams, Anatomy of a nanoscale conduction channel
reveals the mechanism of a high-performance memristor. Adv. Mater. 23, 5633 (2011)