336
V. Y. Zhuo et al.
Acknowledgements The authors would like to acknowledge the Programmatic grant no.
A1687b0033 from the Singapore government’s Research, Innovation and Enterprise 2020 plan
(Advanced Manufacturing and Engineering domain).
References
1. F. Masuoka, M. Asano, H. Iwahashi, T. Komuro, S. Tanaka, A new flash E2PROM cell using
triple polysilicon technology, in Proceedings of the 1984 International Electron Devices
Meeting, pp. 464–467 (1984)
2. V.N. Kynett, A. Baker, M.L. Fandrich, G.P. Hoekstra, O. Jungroth, An in-system reprogrammable 32 K x 8 CMOS flash memory. IEEE J. Solid-State Circuits 23(5), 1157–1163
(1988)
3. S. Lai, Non-volatile memory technologies: the quest for ever lower cost, in Proceedings of
the 2008 International Electron Devices Meeting (2008)
4. H. Akinaga, H. Shima, Resistive random access memory (ReRAM) based on metal oxide.
Proc. IEEE 98(12), 2237–2251 (2010)
5. R. Waser, R. Dittmann, G. Staikov, K. Szot, Redox-based resistive switching memories—
nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21(21), 2632–2663 (2009)
6. T. Prodromakis, C. Toumazou, L. Chua, Two centuries of memristors. Nat. Mater. 11(6),
478–481 (2012)
7. T.W. Hickmott, Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys.
33(9), 2669 (1962)
8. G. Dearnaley, A. Stoneham, D. Morgan, Electrical phenomena in amorphous oxide films.
Reports Prog. Phys. 33(3), 1129 (1970)
9. L.O. Chua, Memristor—The missing circuit element. IEEE Trans. Circuit Theory 18, 507–519
(1971)
10. A. Asamitsu, Y. Tomioka, H. Kuwahara, Y. Tokura, Current switching of resistive states in
magnetoresistive manganites. Nature 388, 50–52 (1997)
11. A. Beck, J.G. Bednorz, C. Gerber, C. Rossel, D. Widmer, Reproducible switching effect in
thin oxide films for memory applications. Appl. Phys. Lett. 77(1), 139 (2000)
12. M.N. Kozicki, M. Yun, L. Hilt, A. Singh, Applications of programmable resistance changes
in metal-doped chalcogenides, in Proceedings of the Symposium Solid State Ion Devices, no.
1, p. 849 (1999)
13. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, The missing memristor found. Nature
453(12), 28–35 (2008)
14. Panasonic Starts World’s First Mass Production of ReRAM Mounted Microcomputers, Panasonic Corporation, August 2013. [Online]. Available: https://news.panasonic.com/global/
press/data/2013/07/en130730-2/en130730-2.html. Accessed 18 Nov 2018
15. T.-Y. Liu, T.H. Yan, R. Scheuerlein, Y. Chen, J.K. Lee, G. Balakrishnan, G. Yee, H. Zhang,
A 130.7-mm2 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology. IEEE J. Solid
State Circuits 49, 140–153 (2014)
16. R. Mertens, Digitimes, 2017. [Online]. Available: http://www.digitimes.com/newregister/
join.asp?view=Article&DATEPUBLISH=2017/06/05&PAGES=PB&SEQ=200. Accessed
18 Nov 2018
17. M.J. Lee, Y. Park, B.S. Kang, S.E. Ahn, C. Lee, K. Kim, W.X. Xianyu, G. Stefanovich, J.H.
Lee, S.J. Chung, Y.H. Kim, C.S. Lee, 2-Stack 1D-1R crosspoint structure with oxide diodes
as switching elements for high density resistance RAM applications, in 2007 International
Electron Devices Meeting (2007)
18. C. Xu, X. Dong, N.P. Jouppi, Y. Xie, Design implications of memristor-based RRAM, in
DATE (IEEE, New York, 2011)
V. Y. Zhuo et al.
Acknowledgements The authors would like to acknowledge the Programmatic grant no.
A1687b0033 from the Singapore government’s Research, Innovation and Enterprise 2020 plan
(Advanced Manufacturing and Engineering domain).
References
1. F. Masuoka, M. Asano, H. Iwahashi, T. Komuro, S. Tanaka, A new flash E2PROM cell using
triple polysilicon technology, in Proceedings of the 1984 International Electron Devices
Meeting, pp. 464–467 (1984)
2. V.N. Kynett, A. Baker, M.L. Fandrich, G.P. Hoekstra, O. Jungroth, An in-system reprogrammable 32 K x 8 CMOS flash memory. IEEE J. Solid-State Circuits 23(5), 1157–1163
(1988)
3. S. Lai, Non-volatile memory technologies: the quest for ever lower cost, in Proceedings of
the 2008 International Electron Devices Meeting (2008)
4. H. Akinaga, H. Shima, Resistive random access memory (ReRAM) based on metal oxide.
Proc. IEEE 98(12), 2237–2251 (2010)
5. R. Waser, R. Dittmann, G. Staikov, K. Szot, Redox-based resistive switching memories—
nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21(21), 2632–2663 (2009)
6. T. Prodromakis, C. Toumazou, L. Chua, Two centuries of memristors. Nat. Mater. 11(6),
478–481 (2012)
7. T.W. Hickmott, Low-frequency negative resistance in thin anodic oxide films. J. Appl. Phys.
33(9), 2669 (1962)
8. G. Dearnaley, A. Stoneham, D. Morgan, Electrical phenomena in amorphous oxide films.
Reports Prog. Phys. 33(3), 1129 (1970)
9. L.O. Chua, Memristor—The missing circuit element. IEEE Trans. Circuit Theory 18, 507–519
(1971)
10. A. Asamitsu, Y. Tomioka, H. Kuwahara, Y. Tokura, Current switching of resistive states in
magnetoresistive manganites. Nature 388, 50–52 (1997)
11. A. Beck, J.G. Bednorz, C. Gerber, C. Rossel, D. Widmer, Reproducible switching effect in
thin oxide films for memory applications. Appl. Phys. Lett. 77(1), 139 (2000)
12. M.N. Kozicki, M. Yun, L. Hilt, A. Singh, Applications of programmable resistance changes
in metal-doped chalcogenides, in Proceedings of the Symposium Solid State Ion Devices, no.
1, p. 849 (1999)
13. D.B. Strukov, G.S. Snider, D.R. Stewart, R.S. Williams, The missing memristor found. Nature
453(12), 28–35 (2008)
14. Panasonic Starts World’s First Mass Production of ReRAM Mounted Microcomputers, Panasonic Corporation, August 2013. [Online]. Available: https://news.panasonic.com/global/
press/data/2013/07/en130730-2/en130730-2.html. Accessed 18 Nov 2018
15. T.-Y. Liu, T.H. Yan, R. Scheuerlein, Y. Chen, J.K. Lee, G. Balakrishnan, G. Yee, H. Zhang,
A 130.7-mm2 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology. IEEE J. Solid
State Circuits 49, 140–153 (2014)
16. R. Mertens, Digitimes, 2017. [Online]. Available: http://www.digitimes.com/newregister/
join.asp?view=Article&DATEPUBLISH=2017/06/05&PAGES=PB&SEQ=200. Accessed
18 Nov 2018
17. M.J. Lee, Y. Park, B.S. Kang, S.E. Ahn, C. Lee, K. Kim, W.X. Xianyu, G. Stefanovich, J.H.
Lee, S.J. Chung, Y.H. Kim, C.S. Lee, 2-Stack 1D-1R crosspoint structure with oxide diodes
as switching elements for high density resistance RAM applications, in 2007 International
Electron Devices Meeting (2007)
18. C. Xu, X. Dong, N.P. Jouppi, Y. Xie, Design implications of memristor-based RRAM, in
DATE (IEEE, New York, 2011)