172
J. Lourembam and J. Huang
54. A. Okada, S. Kanai, M. Yamanouchi et al., Electric-field effects on magnetic anisotropy and
damping constant in Ta/CoFeB / MgO investigated by ferromagnetic resonance. Appl. Phys.
Lett. 105, 052415 (2014). https://doi.org/10.1063/1.4892824
55. Y. Shiota, S. Murakami, F. Bonell et al., Quantitative evaluation of voltage-induced magnetic
anisotropy change by magnetoresistance measurement. Appl. Phys. Express 4, 043005 (2011).
https://doi.org/10.1143/APEX.4.043005
56. J.C. Slonczewski, Conductance and exchange coupling of two ferromagnets separated by a
tunneling barrier. Phys. Rev. B 39, 6995–7002 (1989). https://doi.org/10.1103/PhysRevB.39.
6995
57. V.B. Naik, H. Meng, J.X. Xiao, et al., Effect of electric-field on the perpendicular magnetic
anisotropy and strain properties in CoFeB/MgO magnetic tunnel junctions. Appl. Phys. Lett.
105, 052403 (2014). https://doi.org/10.1063/1.4892410
58. J. Huang, M. Tran, L.S. Ter et al., Determination of the electric field induced anisotropy change
in sub-100 nm perpendicularly magnetized devices. AIP Adv. 6, 055805 (2016). https://doi.
org/10.1063/1.4942822
59. W. Skowro´ nski, T. Nozaki, D.D. Lam et al., Underlayer material influence on electric-field
controlled perpendicular magnetic anisotropy in CoFeB/MgO magnetic tunnel junctions. Phys.
Rev. B 91, 184410 (2015). https://doi.org/10.1103/PhysRevB.91.184410
60. A.J. Lohn, P.R. Mickel, M.J. Marinella, Mechanism of electrical shorting failure mode in
resistive switching. J. Appl. Phys. 116, 034506 (2014). https://doi.org/10.1063/1.4890635
61. X. Li, K. Fitzell, D. Wu et al., Enhancement of voltage-controlled magnetic anisotropy through
precise control of Mg insertion thickness at CoFeB|MgO interface. Appl. Phys. Lett. 10,
052401 (2017). https://doi.org/10.1063/1.4975160
62. S.E. Barnes, J. Ieda, S. Maekawa, Rashba spin-orbit anisotropy and the electric field control
of magnetism. Sci. Rep. 4, 1–5 (2014). https://doi.org/10.1038/srep04105
63. Y. Shiota, F. Bonell, S. Miwa et al., Opposite signs of voltage-induced perpendicular magnetic
anisotropy change in CoFeB|MgO junctions with different underlayers. Appl. Phys. Lett. 103,
082410 (2013). https://doi.org/10.1063/1.4819199
64. T. Inokuchi, H. Yoda, Y. Kato et al., Improved read disturb and write error rates in voltagecontrol spintronics memory (VoCSM) by controlling energy barrier height. Appl. Phys. Lett.
110, 252404 (2017). https://doi.org/10.1063/1.4986923
65. W. Skowro´ nski, T. Nozaki, Y. Shiota et al., Perpendicular magnetic anisotropy of
Ir/CoFeB/MgO trilayer system tuned by electric fields. Appl. Phys. Expr. 8, 053003 (2015).
https://doi.org/10.7567/APEX.8.053003
66. T. Nozaki, K. Yakushiji, S. Tamaru et al., Voltage-induced magnetic anisotropy changes in
an ultrathin FeB layer sandwiched between two MgO layers. Appl. Phys. Express. 6, 073005
(2013). https://doi.org/10.7567/APEX.6.073005
67. T. Nozaki, A. Kozioł-Rachwał, M. Tsujikawa et al., Highly efficient voltage control of spin and
enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic
tunnel junctions. NPG Asia Mater. 9, 1–10 (2017). https://doi.org/10.1038/am.2017.204
68. D. Chien, X. Li, K. Wong et al., Enhanced voltage-controlled magnetic anisotropy in magnetic
tunnel junctions with an MgO/PZT/MgO tunnel barrier. Appl. Phys. Lett. 108, 112402 (2016).
https://doi.org/10.1063/1.4943023
69. H. Sato, M. Yamanouchi, K. Miura et al., Junction size effect on switching current and thermal
stability in CoFeB/MgO perpendicular magnetic tunnel junctions. Appl. Phys. Lett. 99, 042501
(2011). https://doi.org/10.1063/1.3617429
70. C. Yoshida, M. Kurasawa, M.L. Young, et al., A study of dielectric breakdown mechanism
in CoFeB/MgO/CoFeB magnetic tunnel junction. in IEEE International Reliability Physics
Symposium Proceedings, Montreal, QC, p 139–142 (2009). https://doi.org/10.1109/IRPS.2009.
5173239
71. M. Schäfers, V. Drewello, G. Reiss et al., Electric breakdown in ultrathin MgO tunnel barrier
junctions for spin-transfer torque switching. Appl. Phys. Lett. 95, 232119 (2009). https://doi.
org/10.1063/1.3272268
J. Lourembam and J. Huang
54. A. Okada, S. Kanai, M. Yamanouchi et al., Electric-field effects on magnetic anisotropy and
damping constant in Ta/CoFeB / MgO investigated by ferromagnetic resonance. Appl. Phys.
Lett. 105, 052415 (2014). https://doi.org/10.1063/1.4892824
55. Y. Shiota, S. Murakami, F. Bonell et al., Quantitative evaluation of voltage-induced magnetic
anisotropy change by magnetoresistance measurement. Appl. Phys. Express 4, 043005 (2011).
https://doi.org/10.1143/APEX.4.043005
56. J.C. Slonczewski, Conductance and exchange coupling of two ferromagnets separated by a
tunneling barrier. Phys. Rev. B 39, 6995–7002 (1989). https://doi.org/10.1103/PhysRevB.39.
6995
57. V.B. Naik, H. Meng, J.X. Xiao, et al., Effect of electric-field on the perpendicular magnetic
anisotropy and strain properties in CoFeB/MgO magnetic tunnel junctions. Appl. Phys. Lett.
105, 052403 (2014). https://doi.org/10.1063/1.4892410
58. J. Huang, M. Tran, L.S. Ter et al., Determination of the electric field induced anisotropy change
in sub-100 nm perpendicularly magnetized devices. AIP Adv. 6, 055805 (2016). https://doi.
org/10.1063/1.4942822
59. W. Skowro´ nski, T. Nozaki, D.D. Lam et al., Underlayer material influence on electric-field
controlled perpendicular magnetic anisotropy in CoFeB/MgO magnetic tunnel junctions. Phys.
Rev. B 91, 184410 (2015). https://doi.org/10.1103/PhysRevB.91.184410
60. A.J. Lohn, P.R. Mickel, M.J. Marinella, Mechanism of electrical shorting failure mode in
resistive switching. J. Appl. Phys. 116, 034506 (2014). https://doi.org/10.1063/1.4890635
61. X. Li, K. Fitzell, D. Wu et al., Enhancement of voltage-controlled magnetic anisotropy through
precise control of Mg insertion thickness at CoFeB|MgO interface. Appl. Phys. Lett. 10,
052401 (2017). https://doi.org/10.1063/1.4975160
62. S.E. Barnes, J. Ieda, S. Maekawa, Rashba spin-orbit anisotropy and the electric field control
of magnetism. Sci. Rep. 4, 1–5 (2014). https://doi.org/10.1038/srep04105
63. Y. Shiota, F. Bonell, S. Miwa et al., Opposite signs of voltage-induced perpendicular magnetic
anisotropy change in CoFeB|MgO junctions with different underlayers. Appl. Phys. Lett. 103,
082410 (2013). https://doi.org/10.1063/1.4819199
64. T. Inokuchi, H. Yoda, Y. Kato et al., Improved read disturb and write error rates in voltagecontrol spintronics memory (VoCSM) by controlling energy barrier height. Appl. Phys. Lett.
110, 252404 (2017). https://doi.org/10.1063/1.4986923
65. W. Skowro´ nski, T. Nozaki, Y. Shiota et al., Perpendicular magnetic anisotropy of
Ir/CoFeB/MgO trilayer system tuned by electric fields. Appl. Phys. Expr. 8, 053003 (2015).
https://doi.org/10.7567/APEX.8.053003
66. T. Nozaki, K. Yakushiji, S. Tamaru et al., Voltage-induced magnetic anisotropy changes in
an ultrathin FeB layer sandwiched between two MgO layers. Appl. Phys. Express. 6, 073005
(2013). https://doi.org/10.7567/APEX.6.073005
67. T. Nozaki, A. Kozioł-Rachwał, M. Tsujikawa et al., Highly efficient voltage control of spin and
enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic
tunnel junctions. NPG Asia Mater. 9, 1–10 (2017). https://doi.org/10.1038/am.2017.204
68. D. Chien, X. Li, K. Wong et al., Enhanced voltage-controlled magnetic anisotropy in magnetic
tunnel junctions with an MgO/PZT/MgO tunnel barrier. Appl. Phys. Lett. 108, 112402 (2016).
https://doi.org/10.1063/1.4943023
69. H. Sato, M. Yamanouchi, K. Miura et al., Junction size effect on switching current and thermal
stability in CoFeB/MgO perpendicular magnetic tunnel junctions. Appl. Phys. Lett. 99, 042501
(2011). https://doi.org/10.1063/1.3617429
70. C. Yoshida, M. Kurasawa, M.L. Young, et al., A study of dielectric breakdown mechanism
in CoFeB/MgO/CoFeB magnetic tunnel junction. in IEEE International Reliability Physics
Symposium Proceedings, Montreal, QC, p 139–142 (2009). https://doi.org/10.1109/IRPS.2009.
5173239
71. M. Schäfers, V. Drewello, G. Reiss et al., Electric breakdown in ultrathin MgO tunnel barrier
junctions for spin-transfer torque switching. Appl. Phys. Lett. 95, 232119 (2009). https://doi.
org/10.1063/1.3272268