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72. Y. Shiota, T. Nozaki, S. Tamaru et al., Evaluation of write error rate for voltage-driven dynamic
magnetization switching in magnetic tunnel junctions with perpendicular magnetization. Appl.
Phys. Expr. 9, 013001 (2016). https://doi.org/10.7567/APEX.9.013001
73. J.G. Alzate, P.K. Amiri, P. Upadhyaya et al., Voltage-induced switching of nanoscale magnetic
tunnel junctions. in Technical Digest—International Electron Devices Meeting, IEDM. San
Francisco, CA p 29.5.1–29.5.4 (2012). https://doi.org/10.1109/IEDM.2012.6479130
74. J.M. Iwata-Harms, G. Jan, H. Liu et al., High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory.
Sci. Rep. 8, 14409 (2018). https://doi.org/10.1038/s41598-018-32641-6
75. T. Newhouse-Illige, Y. Liu, M. Xu, et al., Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions. Nat. Commun. 8, 15232 (2017). https://doi.org/
10.1038/ncomms15232
76. S. Wang, H. Lee, F. Ebrahimi et al., Comparative evaluation of spin-transfer-torque and magnetoelectric random access memory. IEEE J. Emerg. Sel. Top Circuits Syst. 6, 134–145 (2016).
https://doi.org/10.1109/JETCAS.2016.2547681
77. A.V. Khvalkovskiy, D. Apalkov , S. Watts, et al., Basic principles of STT-MRAM cell operation
in memory arrays. J. Phys. D Appl. Phys. 46, 074001 (2013). https://doi.org/10.1088/00223727/46/7/074001
78. Y. Shiota, T. Nozaki, S. Tamaru et al., Reduction in write error rate of voltage-driven dynamic
magnetization switching by improving thermal stability factor. Appl. Phys. Lett. 10(1063/1),
4990680 (2017). https://doi.org/10.1063/1.4990680
79. H. Cheng, N. Deng, Influence of thermal agitation on the electric field induced precessional
magnetization reversal with perpendicular easy axis. AIP Adv. 3, 122124 (2013). https://doi.
org/10.1063/1.4858423
80. S. Shirotori, H. Yoda, Y. Ohsawa, et al., Voltage-control spintronics memory with a selfaligned heavy-metal electrode. IEEE Trans. Magn. 53, 3401104 (2017). https://doi.org/10.
1109/TMAG.2017.2691764
81. J. Deng, G. Liang, G.Gupta, Ultrafast and low-energy switching in voltage-controlled elliptical
pMTJ. Sci. Rep. 7, 16562 (2017). https://doi.org/10.1038/s41598-017-16292-7
82. R. Matsumoto, T. Nozaki, S. Yuasa, H. Imamura, Voltage-Induced precessional switching at
zero-bias magnetic field in a conically magnetized free layer. Phys Rev Appl 9, 14026 (2018).
https://doi.org/10.1103/PhysRevApplied.9.014026
83. H. Stillrich, C. Menk, R. Frömter, H.P. Oepen, Magnetic anisotropy and the cone state in Co/Pt
multilayer films. J. Appl. Phys. 105, 07C308 (2009). https://doi.org/10.1063/1.3070644
84. J.W. Lee, J.R. Jeong, S.C. Shin et al., Spin-reorientation transitions in ultrathin Co films on
Pt(111) and Pd(111) single-crystal substrates. Phys. Rev. B 66, 172409 (2002). https://doi.org/
10.1103/PhysRevB.66.172409
85. R. Dorrance, J.G. Alzate, S.S. Cherepov et al., Diode-MTJ crossbar memory cell using voltageinduced unipolar switching for high-density MRAM. IEEE Electron. Device Lett. 34, 753–755
(2013). https://doi.org/10.1109/LED.2013.2255096
86. A. Driskill-Smith, D. Apalkov, V. Nikitin et al., Latest advances and roadmap for in-plane
and perpendicular STT-RAM. in 2011 3rd IEEE International Memory Workshop IMW 2011,
pp. 1–3 (2011). https://doi.org/10.1109/IMW.2011.5873205
87. J.H. Oh, J.H. Park, Y.S. Lim, et al., Full integration of highly manufacturable 512Mb PRAM
based on 90nm technology. in Technical Digest—International Electron Devices Meeting,
IEDM, 1-4 (2006). https://doi.org/10.1109/IEDM.2006.346905
173
72. Y. Shiota, T. Nozaki, S. Tamaru et al., Evaluation of write error rate for voltage-driven dynamic
magnetization switching in magnetic tunnel junctions with perpendicular magnetization. Appl.
Phys. Expr. 9, 013001 (2016). https://doi.org/10.7567/APEX.9.013001
73. J.G. Alzate, P.K. Amiri, P. Upadhyaya et al., Voltage-induced switching of nanoscale magnetic
tunnel junctions. in Technical Digest—International Electron Devices Meeting, IEDM. San
Francisco, CA p 29.5.1–29.5.4 (2012). https://doi.org/10.1109/IEDM.2012.6479130
74. J.M. Iwata-Harms, G. Jan, H. Liu et al., High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory.
Sci. Rep. 8, 14409 (2018). https://doi.org/10.1038/s41598-018-32641-6
75. T. Newhouse-Illige, Y. Liu, M. Xu, et al., Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions. Nat. Commun. 8, 15232 (2017). https://doi.org/
10.1038/ncomms15232
76. S. Wang, H. Lee, F. Ebrahimi et al., Comparative evaluation of spin-transfer-torque and magnetoelectric random access memory. IEEE J. Emerg. Sel. Top Circuits Syst. 6, 134–145 (2016).
https://doi.org/10.1109/JETCAS.2016.2547681
77. A.V. Khvalkovskiy, D. Apalkov , S. Watts, et al., Basic principles of STT-MRAM cell operation
in memory arrays. J. Phys. D Appl. Phys. 46, 074001 (2013). https://doi.org/10.1088/00223727/46/7/074001
78. Y. Shiota, T. Nozaki, S. Tamaru et al., Reduction in write error rate of voltage-driven dynamic
magnetization switching by improving thermal stability factor. Appl. Phys. Lett. 10(1063/1),
4990680 (2017). https://doi.org/10.1063/1.4990680
79. H. Cheng, N. Deng, Influence of thermal agitation on the electric field induced precessional
magnetization reversal with perpendicular easy axis. AIP Adv. 3, 122124 (2013). https://doi.
org/10.1063/1.4858423
80. S. Shirotori, H. Yoda, Y. Ohsawa, et al., Voltage-control spintronics memory with a selfaligned heavy-metal electrode. IEEE Trans. Magn. 53, 3401104 (2017). https://doi.org/10.
1109/TMAG.2017.2691764
81. J. Deng, G. Liang, G.Gupta, Ultrafast and low-energy switching in voltage-controlled elliptical
pMTJ. Sci. Rep. 7, 16562 (2017). https://doi.org/10.1038/s41598-017-16292-7
82. R. Matsumoto, T. Nozaki, S. Yuasa, H. Imamura, Voltage-Induced precessional switching at
zero-bias magnetic field in a conically magnetized free layer. Phys Rev Appl 9, 14026 (2018).
https://doi.org/10.1103/PhysRevApplied.9.014026
83. H. Stillrich, C. Menk, R. Frömter, H.P. Oepen, Magnetic anisotropy and the cone state in Co/Pt
multilayer films. J. Appl. Phys. 105, 07C308 (2009). https://doi.org/10.1063/1.3070644
84. J.W. Lee, J.R. Jeong, S.C. Shin et al., Spin-reorientation transitions in ultrathin Co films on
Pt(111) and Pd(111) single-crystal substrates. Phys. Rev. B 66, 172409 (2002). https://doi.org/
10.1103/PhysRevB.66.172409
85. R. Dorrance, J.G. Alzate, S.S. Cherepov et al., Diode-MTJ crossbar memory cell using voltageinduced unipolar switching for high-density MRAM. IEEE Electron. Device Lett. 34, 753–755
(2013). https://doi.org/10.1109/LED.2013.2255096
86. A. Driskill-Smith, D. Apalkov, V. Nikitin et al., Latest advances and roadmap for in-plane
and perpendicular STT-RAM. in 2011 3rd IEEE International Memory Workshop IMW 2011,
pp. 1–3 (2011). https://doi.org/10.1109/IMW.2011.5873205
87. J.H. Oh, J.H. Park, Y.S. Lim, et al., Full integration of highly manufacturable 512Mb PRAM
based on 90nm technology. in Technical Digest—International Electron Devices Meeting,
IEDM, 1-4 (2006). https://doi.org/10.1109/IEDM.2006.346905