Spin Transfer Torque Magnetoresistive Random Access Memory
101
185. G. Counil, J. Kim, K. Shigeto, Y. Otani, T. Devolder, P. Crozat et al., Inductive measurement
of the high frequency permeability of a Permalloy thin film. J. Magn. Magn. Mater. 272,
290–292 (2004)
186. I. Neudecker, Magnetization dynamics of confined ferromagnetic systems (2006)
187. G. Counil, J.-V. Kim, T. Devolder, C. Chappert, K. Shigeto, Y. Otani, Spin wave contributions
to the high-frequency magnetic response of thin films obtained with inductive methods. J.
Appl. Phys. 95, 5646–5652 (2004)
188. D. Worledge, P. Trouilloud, Magnetoresistance measurement of unpatterned magnetic tunnel
junction wafers by current-in-plane tunneling. Appl. Phys. Lett. 83, 84–86 (2003)
189. J.H. Jung, S.H. Lim, S.-R. Lee, Perpendicular magnetic anisotropy properties of CoFeB/Pd
multilayers. J. Nanosci. Nanotechnol. 11, 6233–6236 (2011)
190. T. Young Lee, D. Su Son, S. Ho Lim, S.-R. Lee, High post-annealing stability in [Pt/Co]
multilayers, vol. 113. (2013), pp. 1–3
191. S.T. Lim, M. Tran, J.W. Chenchen, J.F. Ying, G. Han, Effect of different seed layers with
varying Co and Pt thicknesses on the magnetic properties of Co/Pt multilayers. J. Appl. Phys.
117, 17A731 (2015)
192. X. Peng, S. Wakeham, A. Morrone, S. Axdal, M. Feldbaum, J. Hwu et al., Towards the sub-50
nm magnetic device definition: Ion beam etching (IBE) vs plasma-based etching. Vacuum 83,
1007–1013 (2009)
193. S. Franssila, Introduction to microfabrication (Wiley, 2010)
194. J.H. Hwang, G. Jin, X. Chen, Etching methods for a magnetic memory cell stack (Google
Patents, 2004)
195. R.L. Comstock, Review modern magnetic materials in data storage. J. Mater. Sci. Mater.
Electron. 13, 509–523 (2002)
196. T. Kim, J.K.-C. Chen, J.P. Chang, Thermodynamic assessment and experimental verification
of reactive ion etching of magnetic metal elements. J. Vacuum Sci. Technol. Vacuum Surf.
Films 32, 041305 (2014)
197. S.R. Min, H.N. Cho, K.W. Kim, Y.J. Cho, S.-H. Choa, C.W. Chung, Etch characteristics of
magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access
memory. Thin Solid Films 516, 3507–3511 (2008)
198. C. Fabrie, J. Kohlhepp, H. Swagten, B. Koopmans, M. Andriesse, E. van der Drift, Magnetization losses in submicrometer CoFeB dots etched in a high ion density Cl 2-based plasma.
J. Vacuum Sci. Technol. B Microelectron. Nanometer Struct. Process. Measure. Phenomena
24, 2627–2630 (2006)
199. T. Kim, Y. Kim, J.K.-C. Chen, J.P. Chang, Viable chemical approach for patterning nanoscale
magnetoresistive random access memory. J. Vacuum Sci. Technol. Vacuum Surf. Films 33,
021308 (2015)
200. K. Keizo, U. Hiroaki, S. Katsumi, H. Hiromitsu, S. Tadahiko, Etching magnetic tunnel junction
with metal etchers. Japan. J. Appl. Phys. 49, 08JB02 (2010)
201. M. Gajek, J. Nowak, J. Sun, P. Trouilloud, E. O’sullivan, D. Abraham, et al., Spin torque
switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy. Appl. Phys.
Lett. 100, 132408 (2012)
202. K. Jung, H. Cho, Y. Hahn, D. Hays, E. Lambers, Y. Park et al., Comparison of Cl2/He, Cl2/Ar,
and Cl2/Xe plasma chemistries for dry etching of NiFe and NiFeCo. J. Electrochem. Soc.
146, 1465–1468 (1999)
203. H. Cho, K.-P. Lee, K. Jung, S. Pearton, J. Marburger, F. Sharifi et al., Corrosion-free dry etch
patterning of magnetic random access memory stacks: effects of ultraviolet illumination. J.
Appl. Phys. 87, 6397–6399 (2000)
204. N.D. Altieri, J.K.-C. Chen, L. Minardi, J.P. Chang, Plasma–surface interactions at the atomic
scale for patterning metals. J. Vacuum Sci. Technol. A Vacuum Surf. Films 35, 05C203 (2017)
205. A.A. Garay, J.H. Choi, S.M. Hwang, C.W. Chung, Inductively coupled plasma reactive ion
etching of magnetic tunnel junction stacks in a CH3COOH/Ar gas. ECS Solid State Lett. 4,
P77–P79 (2015)
101
185. G. Counil, J. Kim, K. Shigeto, Y. Otani, T. Devolder, P. Crozat et al., Inductive measurement
of the high frequency permeability of a Permalloy thin film. J. Magn. Magn. Mater. 272,
290–292 (2004)
186. I. Neudecker, Magnetization dynamics of confined ferromagnetic systems (2006)
187. G. Counil, J.-V. Kim, T. Devolder, C. Chappert, K. Shigeto, Y. Otani, Spin wave contributions
to the high-frequency magnetic response of thin films obtained with inductive methods. J.
Appl. Phys. 95, 5646–5652 (2004)
188. D. Worledge, P. Trouilloud, Magnetoresistance measurement of unpatterned magnetic tunnel
junction wafers by current-in-plane tunneling. Appl. Phys. Lett. 83, 84–86 (2003)
189. J.H. Jung, S.H. Lim, S.-R. Lee, Perpendicular magnetic anisotropy properties of CoFeB/Pd
multilayers. J. Nanosci. Nanotechnol. 11, 6233–6236 (2011)
190. T. Young Lee, D. Su Son, S. Ho Lim, S.-R. Lee, High post-annealing stability in [Pt/Co]
multilayers, vol. 113. (2013), pp. 1–3
191. S.T. Lim, M. Tran, J.W. Chenchen, J.F. Ying, G. Han, Effect of different seed layers with
varying Co and Pt thicknesses on the magnetic properties of Co/Pt multilayers. J. Appl. Phys.
117, 17A731 (2015)
192. X. Peng, S. Wakeham, A. Morrone, S. Axdal, M. Feldbaum, J. Hwu et al., Towards the sub-50
nm magnetic device definition: Ion beam etching (IBE) vs plasma-based etching. Vacuum 83,
1007–1013 (2009)
193. S. Franssila, Introduction to microfabrication (Wiley, 2010)
194. J.H. Hwang, G. Jin, X. Chen, Etching methods for a magnetic memory cell stack (Google
Patents, 2004)
195. R.L. Comstock, Review modern magnetic materials in data storage. J. Mater. Sci. Mater.
Electron. 13, 509–523 (2002)
196. T. Kim, J.K.-C. Chen, J.P. Chang, Thermodynamic assessment and experimental verification
of reactive ion etching of magnetic metal elements. J. Vacuum Sci. Technol. Vacuum Surf.
Films 32, 041305 (2014)
197. S.R. Min, H.N. Cho, K.W. Kim, Y.J. Cho, S.-H. Choa, C.W. Chung, Etch characteristics of
magnetic tunnel junction stack with nanometer-sized patterns for magnetic random access
memory. Thin Solid Films 516, 3507–3511 (2008)
198. C. Fabrie, J. Kohlhepp, H. Swagten, B. Koopmans, M. Andriesse, E. van der Drift, Magnetization losses in submicrometer CoFeB dots etched in a high ion density Cl 2-based plasma.
J. Vacuum Sci. Technol. B Microelectron. Nanometer Struct. Process. Measure. Phenomena
24, 2627–2630 (2006)
199. T. Kim, Y. Kim, J.K.-C. Chen, J.P. Chang, Viable chemical approach for patterning nanoscale
magnetoresistive random access memory. J. Vacuum Sci. Technol. Vacuum Surf. Films 33,
021308 (2015)
200. K. Keizo, U. Hiroaki, S. Katsumi, H. Hiromitsu, S. Tadahiko, Etching magnetic tunnel junction
with metal etchers. Japan. J. Appl. Phys. 49, 08JB02 (2010)
201. M. Gajek, J. Nowak, J. Sun, P. Trouilloud, E. O’sullivan, D. Abraham, et al., Spin torque
switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy. Appl. Phys.
Lett. 100, 132408 (2012)
202. K. Jung, H. Cho, Y. Hahn, D. Hays, E. Lambers, Y. Park et al., Comparison of Cl2/He, Cl2/Ar,
and Cl2/Xe plasma chemistries for dry etching of NiFe and NiFeCo. J. Electrochem. Soc.
146, 1465–1468 (1999)
203. H. Cho, K.-P. Lee, K. Jung, S. Pearton, J. Marburger, F. Sharifi et al., Corrosion-free dry etch
patterning of magnetic random access memory stacks: effects of ultraviolet illumination. J.
Appl. Phys. 87, 6397–6399 (2000)
204. N.D. Altieri, J.K.-C. Chen, L. Minardi, J.P. Chang, Plasma–surface interactions at the atomic
scale for patterning metals. J. Vacuum Sci. Technol. A Vacuum Surf. Films 35, 05C203 (2017)
205. A.A. Garay, J.H. Choi, S.M. Hwang, C.W. Chung, Inductively coupled plasma reactive ion
etching of magnetic tunnel junction stacks in a CH3COOH/Ar gas. ECS Solid State Lett. 4,
P77–P79 (2015)