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216. C.-W. Chien, D.-Y. Wang, K.-H. Shen, S.-H. Huang, K.-M. Kuo, S.-Y. Yang et al., Evidences
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217. J. Wong, K. Wong, C. Wang, K. Lee, K. Yamane, V. Naik, et al., “CMOS-embedded STTMRAM arrays in 2x nm nodes for GP-MCU applications (2017)
W. C. Law and S. De W. Wong
206. A.A. Garay, S.M. Hwang, J.H. Choi, B.C. Min, C.W. Chung, Inductively coupled plasma
reactive ion etching of CoFeB magnetic thin films in a CH3COOH/Ar gas mixture. Vacuum
119, 151–158 (2015)
207. A. Orland, R. Blumenthal, Metal etching with organic based plasmas. II. CO/NH 3 plasmas.
J. Vacuum Sci. Technol. B Microelectron. Nanometer Struct. Process. Measure. Phenomena
23, 1597–1602 (2005)
208. X. Gu, Y. Kikuchi, T. Nozawa, S. Samukawa, A new metallic complex reaction etching for
transition metals by a low-temperature neutral beam process. J. Phys. D Appl. Phys. 47,
322002 (2014)
209. K. Kinoshita, T. Yamamoto, H. Honjo, N. Kasai, S. Ikeda, H. Ohno, Damage recovery by
reductive chemistry after methanol-based plasma etch to fabricate magnetic tunnel junctions.
Japan. J. Appl. Phys. 51, 08HA01 (2012)
210. K. Kinoshita, H. Utsumi, K. Suemitsu, H. Hada, T. Sugibayashi, Etching magnetic tunnel
junction with metal etchers. Japan. J. Appl. Phys. 49, 08JB02 (2010)
211. N. Matsui, K. Mashimo, A. Egami, A. Konishi, O. Okada, T. Tsukada, Etching characteristics
of magnetic materials (Co, Fe, Ni) using CO/NH3 gas plasma for hardening mask etching.
Vacuum 66, 479–485 (2002)
212. K. Kinoshita, H. Honjo, S. Fukami, H. Sato, K. Mizunuma, K. Tokutome et al., Processinduced damage and its recovery for a CoFeB–MgO magnetic tunnel junction with
perpendicular magnetic easy axis. Jpn. J. Appl. Phys. 53, 103001 (2014)
213. J. Jeong, T. Endoh, Improvement of electric and magnetic properties of patterned magnetic
tunnel junctions by recovery of damaged layer using oxygen showering post-treatment
process. J. Appl. Phys. 117, 17D906 (2015)
214. J. Jeong, T. Endoh, Ion beam etching process for high-density spintronic devices and its
damage recovery by the oxygen showering post-treatment process. Jpn. J. Appl. Phys. 56,
04CE09 (2017)
215. V. Ip, S. Huang, S.D. Carnevale, I.L. Berry, K. Rook, T.B. Lill et al., Ion beam patterning of
high-density STT-RAM devices. IEEE Trans. Magn. 53, 1–4 (2017)
216. C.-W. Chien, D.-Y. Wang, K.-H. Shen, S.-H. Huang, K.-M. Kuo, S.-Y. Yang et al., Evidences
of reactive-ion-etching-induced damages to the ferromagnet of perpendicular magnetic tunnel
junctions. IEEE Electron Device Lett. 34, 241–243 (2013)
217. J. Wong, K. Wong, C. Wang, K. Lee, K. Yamane, V. Naik, et al., “CMOS-embedded STTMRAM arrays in 2x nm nodes for GP-MCU applications (2017)