Spin Transfer Torque Magnetoresistive Random Access Memory
97
103. S.S. Parkin, C. Kaiser, A. Panchula, P.M. Rice, B. Hughes, M. Samant et al., Giant tunnelling
magnetoresistance at room temperature with MgO (100) tunnel barriers. Nat. Mater. 3, 862
(2004)
104. J. Zhang, R. White, Voltage dependence of magnetoresistance in spin dependent tunneling
junctions. J. Appl. Phys. 83, 6512–6514 (1998)
105. S. Zhang, P. Levy, A. Marley, S. Parkin, Quenching of magnetoresistance by hot electrons in
magnetic tunnel junctions. Phys. Rev. Lett. 79, 3744 (1997)
106. C.H. Shang, J. Nowak, R. Jansen, J.S. Moodera, Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions. Phys. Rev. B 58, R2917
(1998)
107. V. Drewello, J. Schmalhorst, A. Thomas, G. Reiss, Evidence for strong magnon contribution
to the TMR temperature dependence in MgO based tunnel junctions. Phys. Rev. B 77, 014440
(2008)
108. S. Wang, R. Ward, G. Du, X. Han, C. Wang, A. Kohn, Temperature dependence of giant
tunnel magnetoresistance in epitaxial Fe/MgO/Fe magnetic tunnel junctions. Phys. Rev. B
78, 180411 (2008)
109. M. Jourdan, Revival of Heusler compounds for spintronics. Mater. Today 8, 362–363 (2014)
110. T. Graf, C. Felser, S.S. Parkin, Simple rules for the understanding of Heusler compounds.
Prog. Solid State Chem. 39, 1–50 (2011)
111. R. Sbiaa, S. Lua, R. Law, H. Meng, R. Lye, H. Tan, Reduction of switching current by spin
transfer torque effect in perpendicular anisotropy magnetoresistive devices. J. Appl. Phys.
109, 07C707 (2011)
112. C. Lin, S. Kang, Y. Wang, K. Lee, X. Zhu, W. Chen, et al., 45nm low power CMOS logic
compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell, in Electron
Devices Meeting (IEDM), 2009 IEEE International (2009), pp. 1–4
113. Z. Diao, D. Apalkov, M. Pakala, Y. Ding, A. Panchula, Y. Huai, Spin transfer switching and
spin polarization in magnetic tunnel junctions with MgO and AlO x barriers. Appl. Phys. Lett.
87, 232502 (2005)
114. X. Yao, H. Meng, Y. Zhang, J.-P. Wang, Improved current switching symmetry of magnetic
tunneling junction and giant magnetoresistance devices with nano-current-channel structure.
J. Appl. Phys. 103, 07A717 (2008)
115. D. Worledge, G. Hu, D.W. Abraham, J. Sun, P. Trouilloud, J. Nowak et al., Spin torque
switching of perpendicular Ta| CoFeB| MgO-based magnetic tunnel junctions. Appl. Phys.
Lett. 98, 022501 (2011)
116. J. Sun, Current-driven magnetic switching in manganite trilayer junctions. J. Magn. Magn.
Mater. 202, 157–162 (1999)
117. Z. Diao, Z. Li, S. Wang, Y. Ding, A. Panchula, E. Chen et al., Spin-transfer torque switching in
magnetic tunnel junctions and spin-transfer torque random access memory. J. Phys. Condens.
Matter 19, 165209 (2007)
118. Y. Huai, Spin-transfer torque MRAM (STT-MRAM): challenges and prospects. AAPPS
Bulletin 18, 33–40 (2008)
119. M. Gottwald, J. Kan, K. Lee, X. Zhu, C. Park, S. Kang, Scalable and thermally robust
perpendicular magnetic tunnel junctions for STT-MRAM. Appl. Phys. Lett. 106, 032413
(2015)
120. J. Chatterjee, T. Tahmasebi, S. Mertens, G.S. Kar, T. Min, J. De Boeck, Seed layer effect on the
magnetic properties of ultrathin Co/Pt multilayers with perpendicular magnetic anisotropy.
IEEE Trans. Magn. 50, 1–4 (2014)
121. K. Yakushiji, T. Saruya, H. Kubota, A. Fukushima, T. Nagahama, S. Yuasa et al., Ultrathin
Co/Pt and Co/Pd superlattice films for MgO-based perpendicular magnetic tunnel junctions.
Appl. Phys. Lett. 97, 232508 (2010)
122. W. Peng, O. Keitel, R. Victoria, E. Koparal, J.H. Judy, Co/Pt superlattices with ultra-thin
Ta seed layer on NiFe underlayer for double-layer perpendicular magnetic recording media.
IEEE Trans. Magn. 36, 2390–2392 (2000)
97
103. S.S. Parkin, C. Kaiser, A. Panchula, P.M. Rice, B. Hughes, M. Samant et al., Giant tunnelling
magnetoresistance at room temperature with MgO (100) tunnel barriers. Nat. Mater. 3, 862
(2004)
104. J. Zhang, R. White, Voltage dependence of magnetoresistance in spin dependent tunneling
junctions. J. Appl. Phys. 83, 6512–6514 (1998)
105. S. Zhang, P. Levy, A. Marley, S. Parkin, Quenching of magnetoresistance by hot electrons in
magnetic tunnel junctions. Phys. Rev. Lett. 79, 3744 (1997)
106. C.H. Shang, J. Nowak, R. Jansen, J.S. Moodera, Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions. Phys. Rev. B 58, R2917
(1998)
107. V. Drewello, J. Schmalhorst, A. Thomas, G. Reiss, Evidence for strong magnon contribution
to the TMR temperature dependence in MgO based tunnel junctions. Phys. Rev. B 77, 014440
(2008)
108. S. Wang, R. Ward, G. Du, X. Han, C. Wang, A. Kohn, Temperature dependence of giant
tunnel magnetoresistance in epitaxial Fe/MgO/Fe magnetic tunnel junctions. Phys. Rev. B
78, 180411 (2008)
109. M. Jourdan, Revival of Heusler compounds for spintronics. Mater. Today 8, 362–363 (2014)
110. T. Graf, C. Felser, S.S. Parkin, Simple rules for the understanding of Heusler compounds.
Prog. Solid State Chem. 39, 1–50 (2011)
111. R. Sbiaa, S. Lua, R. Law, H. Meng, R. Lye, H. Tan, Reduction of switching current by spin
transfer torque effect in perpendicular anisotropy magnetoresistive devices. J. Appl. Phys.
109, 07C707 (2011)
112. C. Lin, S. Kang, Y. Wang, K. Lee, X. Zhu, W. Chen, et al., 45nm low power CMOS logic
compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell, in Electron
Devices Meeting (IEDM), 2009 IEEE International (2009), pp. 1–4
113. Z. Diao, D. Apalkov, M. Pakala, Y. Ding, A. Panchula, Y. Huai, Spin transfer switching and
spin polarization in magnetic tunnel junctions with MgO and AlO x barriers. Appl. Phys. Lett.
87, 232502 (2005)
114. X. Yao, H. Meng, Y. Zhang, J.-P. Wang, Improved current switching symmetry of magnetic
tunneling junction and giant magnetoresistance devices with nano-current-channel structure.
J. Appl. Phys. 103, 07A717 (2008)
115. D. Worledge, G. Hu, D.W. Abraham, J. Sun, P. Trouilloud, J. Nowak et al., Spin torque
switching of perpendicular Ta| CoFeB| MgO-based magnetic tunnel junctions. Appl. Phys.
Lett. 98, 022501 (2011)
116. J. Sun, Current-driven magnetic switching in manganite trilayer junctions. J. Magn. Magn.
Mater. 202, 157–162 (1999)
117. Z. Diao, Z. Li, S. Wang, Y. Ding, A. Panchula, E. Chen et al., Spin-transfer torque switching in
magnetic tunnel junctions and spin-transfer torque random access memory. J. Phys. Condens.
Matter 19, 165209 (2007)
118. Y. Huai, Spin-transfer torque MRAM (STT-MRAM): challenges and prospects. AAPPS
Bulletin 18, 33–40 (2008)
119. M. Gottwald, J. Kan, K. Lee, X. Zhu, C. Park, S. Kang, Scalable and thermally robust
perpendicular magnetic tunnel junctions for STT-MRAM. Appl. Phys. Lett. 106, 032413
(2015)
120. J. Chatterjee, T. Tahmasebi, S. Mertens, G.S. Kar, T. Min, J. De Boeck, Seed layer effect on the
magnetic properties of ultrathin Co/Pt multilayers with perpendicular magnetic anisotropy.
IEEE Trans. Magn. 50, 1–4 (2014)
121. K. Yakushiji, T. Saruya, H. Kubota, A. Fukushima, T. Nagahama, S. Yuasa et al., Ultrathin
Co/Pt and Co/Pd superlattice films for MgO-based perpendicular magnetic tunnel junctions.
Appl. Phys. Lett. 97, 232508 (2010)
122. W. Peng, O. Keitel, R. Victoria, E. Koparal, J.H. Judy, Co/Pt superlattices with ultra-thin
Ta seed layer on NiFe underlayer for double-layer perpendicular magnetic recording media.
IEEE Trans. Magn. 36, 2390–2392 (2000)