98
W. C. Law and S. De W. Wong
123. P. Chowdhury, P. Kulkarni, M. Krishnan, H.C. Barshilia, A. Sagdeo, S. Rai et al., Effect of
coherent to incoherent structural transition on magnetic anisotropy in Co/Pt multilayers. J.
Appl. Phys. 112, 023912 (2012)
124. J. Chatterjee, R.C. Sousa, N. Perrissin, S. Auffret, C. Ducruet, B. Dieny, Enhanced annealing
stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions
using W layer. Appl. Phys. Lett. 110, 202401 (2017)
125. H. Almasi, D.R. Hickey, T. Newhouse-Illige, M. Xu, M.R. Rosales, S. Nahar et al., Enhanced
tunneling magnetoresistance and perpendicular magnetic anisotropy in Mo/CoFeB/MgO
magnetic tunnel junctions. Appl. Phys. Lett. 106, 182406 (2015)
126. T. Liu, Y. Zhang, J.W. Cai, H.Y. Pan, Thermally robust Mo/CoFeB/MgO trilayers with strong
perpendicular magnetic anisotropy. Sci. Rep. 4, 5895 (2014)
127. S. Tang, P. Carcia, D. Coulman, A. McGhie, Scanning tunneling microscopy of Pt/Co
multilayers on Pt buffer layers. Appl. Phys. Lett. 59, 2898–2900 (1991)
128. C.-J. Lin, G. Gorman, C. Lee, R. Farrow, E. Marinero, H. Do et al., Magnetic and structural
properties of Co/Pt multilayers. J. Magn. Magn. Mater. 93, 194–206 (1991)
129. E.H. Kim, Y.B. Xiao, S.M. Kong, C.W. Chung, Investigation on etch characteristics of
nanometer-sized magnetic tunnel junction stacks using a HBr/Ar plasma. J. Nanosci.
Nanotechnol. 11, 6616–6620 (2011)
130. E.H. Kim, T.Y. Lee, C.W. Chung, Evolution of etch profile of magnetic tunnel junction stacks
etched in a CH3OH/Ar plasma. J. Electrochem. Soc. 159, H230–H234 (2012)
131. S. Hassan, L. Xue, J. Anh, M. Pakala, G. Sin, M. Okazaki, STT-RAM device performance
improvement using CMP process, in Advanced Semiconductor Manufacturing Conference
(ASMC), 2017 28th Annual SEMI (2017), pp. 209–211
132. M. Wang, Y. Zhang, X. Zhao, W. Zhao, Tunnel junction with perpendicular magnetic
anisotropy: status and challenges. Micromachines 6, 1023–1045 (2015)
133. Z. Li, D.J. Smith, E. Marinero, J. Willett, Investigations of microstructure of thin TbFeCo
films by high-resolution electron microscopy. J. Appl. Phys. 69, 6590–6594 (1991)
134. N. Nishimura, T. Hirai, A. Koganei, T. Ikeda, K. Okano, Y. Sekiguchi et al., Magnetic tunnel
junction device with perpendicular magnetization films for high-density magnetic random
access memory. J. Appl. Phys. 91, 5246–5249 (2002)
135. H.-M. Lee, Y.-C. Lee, H.-H. Chen, L. Horng, J.-C. Wu, C.-M. Lee, et al., The development
of perpendicular magnetic tunneling junctions, in Spin (2012), p. 1230002
136. G. Kim, Y. Sakuraba, M. Oogane, Y. Ando, T. Miyazaki, Tunneling magnetoresistance of
magnetic tunnel junctions using perpendicular magnetization L 1 0-Co Pt electrodes. Appl.
Phys. Lett. 92, 172502 (2008)
137. M. Yoshikawa, E. Kitagawa, T. Nagase, T. Daibou, M. Nagamine, K. Nishiyama et al.,
Tunnel magnetoresistance over 100% in MgO-based magnetic tunnel junction films with
perpendicular magnetic L1 $_0 $-FePt electrodes. IEEE Trans. Magn. 44, 2573–2576 (2008)
138. S. Iwata, S. Yamashita, S. Tsunashima, Perpendicular magnetic anisotropy and magnetooptical Kerr spectra of MBE-grown PtCo alloy films. IEEE Trans. Magn. 33, 3670–3672
(1997)
139. M. Ohtake, D. Suzuki, M. Futamoto, F. Kirino, N. Inaba, Preparation of L 11-CoPt/MgO/L
11-CoPt tri-layer film on Ru (0001) underlayer. AIP Adv. 6, 056103 (2016)
140. J.-C.A. Huang, A. Hsu, Y. Lee, T.-H. Wu, C. Lee, Influence of crystal structure on the
perpendicular magnetic anisotropy of an epitaxial CoPt alloy. J. Appl. Phys. 85, 5977–5979
(1999)
141. H. Sato, T. Shimatsu, Y. Okazaki, H. Muraoka, H. Aoi, S. Okamoto et al., Fabrication of L 1
1 type Co-Pt ordered alloy films by sputter deposition. J. Appl. Phys. 103, 07E114 (2008)
142. G. Kar, W. Kim, T. Tahmasebi, J. Swerts, S. Mertens, N. Heylen, et al., Co/Ni based
p-MTJ stack for sub-20 nm high density stand alone and high performance embedded
memory application, in Electron Devices Meeting (IEDM), 2014 IEEE International (2014),
pp. 19.1.1–19.1.4
143. J. Zhou, W. Zhao, Y. Wang, S. Peng, J. Qiao, L. Su et al., Large influence of capping layers on
tunnel magnetoresistance in magnetic tunnel junctions. Appl. Phys. Lett. 109, 242403 (2016)
W. C. Law and S. De W. Wong
123. P. Chowdhury, P. Kulkarni, M. Krishnan, H.C. Barshilia, A. Sagdeo, S. Rai et al., Effect of
coherent to incoherent structural transition on magnetic anisotropy in Co/Pt multilayers. J.
Appl. Phys. 112, 023912 (2012)
124. J. Chatterjee, R.C. Sousa, N. Perrissin, S. Auffret, C. Ducruet, B. Dieny, Enhanced annealing
stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions
using W layer. Appl. Phys. Lett. 110, 202401 (2017)
125. H. Almasi, D.R. Hickey, T. Newhouse-Illige, M. Xu, M.R. Rosales, S. Nahar et al., Enhanced
tunneling magnetoresistance and perpendicular magnetic anisotropy in Mo/CoFeB/MgO
magnetic tunnel junctions. Appl. Phys. Lett. 106, 182406 (2015)
126. T. Liu, Y. Zhang, J.W. Cai, H.Y. Pan, Thermally robust Mo/CoFeB/MgO trilayers with strong
perpendicular magnetic anisotropy. Sci. Rep. 4, 5895 (2014)
127. S. Tang, P. Carcia, D. Coulman, A. McGhie, Scanning tunneling microscopy of Pt/Co
multilayers on Pt buffer layers. Appl. Phys. Lett. 59, 2898–2900 (1991)
128. C.-J. Lin, G. Gorman, C. Lee, R. Farrow, E. Marinero, H. Do et al., Magnetic and structural
properties of Co/Pt multilayers. J. Magn. Magn. Mater. 93, 194–206 (1991)
129. E.H. Kim, Y.B. Xiao, S.M. Kong, C.W. Chung, Investigation on etch characteristics of
nanometer-sized magnetic tunnel junction stacks using a HBr/Ar plasma. J. Nanosci.
Nanotechnol. 11, 6616–6620 (2011)
130. E.H. Kim, T.Y. Lee, C.W. Chung, Evolution of etch profile of magnetic tunnel junction stacks
etched in a CH3OH/Ar plasma. J. Electrochem. Soc. 159, H230–H234 (2012)
131. S. Hassan, L. Xue, J. Anh, M. Pakala, G. Sin, M. Okazaki, STT-RAM device performance
improvement using CMP process, in Advanced Semiconductor Manufacturing Conference
(ASMC), 2017 28th Annual SEMI (2017), pp. 209–211
132. M. Wang, Y. Zhang, X. Zhao, W. Zhao, Tunnel junction with perpendicular magnetic
anisotropy: status and challenges. Micromachines 6, 1023–1045 (2015)
133. Z. Li, D.J. Smith, E. Marinero, J. Willett, Investigations of microstructure of thin TbFeCo
films by high-resolution electron microscopy. J. Appl. Phys. 69, 6590–6594 (1991)
134. N. Nishimura, T. Hirai, A. Koganei, T. Ikeda, K. Okano, Y. Sekiguchi et al., Magnetic tunnel
junction device with perpendicular magnetization films for high-density magnetic random
access memory. J. Appl. Phys. 91, 5246–5249 (2002)
135. H.-M. Lee, Y.-C. Lee, H.-H. Chen, L. Horng, J.-C. Wu, C.-M. Lee, et al., The development
of perpendicular magnetic tunneling junctions, in Spin (2012), p. 1230002
136. G. Kim, Y. Sakuraba, M. Oogane, Y. Ando, T. Miyazaki, Tunneling magnetoresistance of
magnetic tunnel junctions using perpendicular magnetization L 1 0-Co Pt electrodes. Appl.
Phys. Lett. 92, 172502 (2008)
137. M. Yoshikawa, E. Kitagawa, T. Nagase, T. Daibou, M. Nagamine, K. Nishiyama et al.,
Tunnel magnetoresistance over 100% in MgO-based magnetic tunnel junction films with
perpendicular magnetic L1 $_0 $-FePt electrodes. IEEE Trans. Magn. 44, 2573–2576 (2008)
138. S. Iwata, S. Yamashita, S. Tsunashima, Perpendicular magnetic anisotropy and magnetooptical Kerr spectra of MBE-grown PtCo alloy films. IEEE Trans. Magn. 33, 3670–3672
(1997)
139. M. Ohtake, D. Suzuki, M. Futamoto, F. Kirino, N. Inaba, Preparation of L 11-CoPt/MgO/L
11-CoPt tri-layer film on Ru (0001) underlayer. AIP Adv. 6, 056103 (2016)
140. J.-C.A. Huang, A. Hsu, Y. Lee, T.-H. Wu, C. Lee, Influence of crystal structure on the
perpendicular magnetic anisotropy of an epitaxial CoPt alloy. J. Appl. Phys. 85, 5977–5979
(1999)
141. H. Sato, T. Shimatsu, Y. Okazaki, H. Muraoka, H. Aoi, S. Okamoto et al., Fabrication of L 1
1 type Co-Pt ordered alloy films by sputter deposition. J. Appl. Phys. 103, 07E114 (2008)
142. G. Kar, W. Kim, T. Tahmasebi, J. Swerts, S. Mertens, N. Heylen, et al., Co/Ni based
p-MTJ stack for sub-20 nm high density stand alone and high performance embedded
memory application, in Electron Devices Meeting (IEDM), 2014 IEEE International (2014),
pp. 19.1.1–19.1.4
143. J. Zhou, W. Zhao, Y. Wang, S. Peng, J. Qiao, L. Su et al., Large influence of capping layers on
tunnel magnetoresistance in magnetic tunnel junctions. Appl. Phys. Lett. 109, 242403 (2016)