96
W. C. Law and S. De W. Wong
81. J.J. Kan, C. Park, C. Ching, J. Ahn, Y. Xie, M. Pakala et al., A study on practically unlimited
endurance of STT-MRAM. IEEE Trans. Electron Devices 64, 3639–3646 (2017)
82. W.C. Law, T. Tahmasebi, F. Tan, T. Jin, W. Gan, X. Zhu et al., High temperature ferromagnetic
resonance study on pMTJ stacks with diffusion barrier layers. J. Phys. D Appl. Phys. 51, 1–7
(2018)
83. S.Y. Jang, S. Lim, S. Lee, Magnetic dead layer in amorphous CoFeB layers with various top
and bottom structures. J. Appl. Phys. 107, 09C707 (2010)
84. S.Y. Jang, C.-Y. You, S. Lim, S. Lee, Annealing effects on the magnetic dead layer and
saturation magnetization in unit structures relevant to a synthetic ferrimagnetic free structure.
J. Appl. Phys. 109, 013901 (2011)
85. K. Oguz, P. Jivrajka, M. Venkatesan, G. Feng, J. Coey, Magnetic dead layers in sputtered Co
40 Fe 40 B 20 films. J. Appl. Phys. 103, 07B526 (2008)
86. H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno, Perpendicularanisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO
recording structure. Appl. Phys. Lett. 101, 022414 (2012)
87. Y. Huai, M. Pakala, Spin scattering and heat assisted switching of a magnetic element (Google
Patents, 2006)
88. L.T. Tran, Thermal-assisted switching array configuration for MRAM (Google Patents, 2005)
89. I. Prejbeanu, M. Kerekes, R.C. Sousa, H. Sibuet, O. Redon, B. Dieny et al., Thermally assisted
MRAM. J. Phys. Condens. Matter 19, 165218 (2007)
90. J. Wang, P. Freitas, Low-current blocking temperature writing of double barrier magnetic
random access memory cells. Appl. Phys. Lett. 84, 945–947 (2004)
91. W. Kang, Y. Cheng, Y. Zhang, D. Ravelosona, W. Zhao, Readability challenges in deeply
scaled STT-MRAM, in Non-volatile Memory Technology Symposium (NVMTS), 2014 14th
Annual (2014), pp. 1–4
92. Y. Zhang, X. Wang, Y. Chen, STT-RAM cell design optimization for persistent and nonpersistent error rate reduction: a statistical design view, in Proceedings of the International
Conference on Computer-Aided Design (2011), pp. 471–477
93. W. Zhao, Y. Zhang, T. Devolder, J.-O. Klein, D. Ravelosona, C. Chappert et al., Failure and
reliability analysis of STT-MRAM. Microelectron. Reliab. 52, 1848–1852 (2012)
94. S. Ikeda, J. Hayakawa, Y.M. Lee, R. Sasaki, T. Meguro, F. Matsukura et al., Dependence
of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during
MgO sputtering. Jpn. J. Appl. Phys. 44, L1442 (2005)
95. Y. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, H. Ohno, Effect of electrode composition on the
tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel
barrier. Appl. Phys. Lett. 90, 212507 (2007)
96. S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, K. Ando, Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions. Nat. Mater. 3, 868
(2004)
97. S. Yuasa, D. Djayaprawira, Giant tunnel magnetoresistance in magnetic tunnel junctions with
a crystalline MgO (0 0 1) barrier. J. Phys. D Appl. Phys. 40, R337 (2007)
98. X. Chen, P.P. Freitas, Magnetic tunnel junction based on MgO barrier prepared by natural
oxidation and direct sputtering deposition. Nano-Micro Lett. 4, 25–29 (2012)
99. S. Yuasa, A. Fukushima, H. Kubota, Y. Suzuki, K. Ando, Giant tunneling magnetoresistance
up to 410% at room temperature in fully epitaxial Co/Mg O/Co magnetic tunnel junctions
with bcc Co (001) electrodes. Appl. Phys. Lett. 89, 042505 (2006)
100. L. Néel, Magnetisme-sur un nouveau mode de couplage entre les animantations de deux
couches minces ferromagnetiques. Comptes Rendus Hebdomadaires Des Seances De L
Academie Des Sciences 255, 1676–2000 (1962)
101. J. Moritz, F. Garcia, J. Toussaint, B. Dieny, J. Nozieres, Orange peel coupling in multilayers
with perpendicular magnetic anisotropy: application to (Co/Pt)-based exchange-biased spinvalves. EPL (Europhys. Lett.) 65, 123 (2004)
102. B. Schrag, A. Anguelouch, S. Ingvarsson, G. Xiao, Y. Lu, P. Trouilloud et al., Néel “orangepeel” coupling in magnetic tunneling junction devices. Appl. Phys. Lett. 77, 2373–2375
(2000)
W. C. Law and S. De W. Wong
81. J.J. Kan, C. Park, C. Ching, J. Ahn, Y. Xie, M. Pakala et al., A study on practically unlimited
endurance of STT-MRAM. IEEE Trans. Electron Devices 64, 3639–3646 (2017)
82. W.C. Law, T. Tahmasebi, F. Tan, T. Jin, W. Gan, X. Zhu et al., High temperature ferromagnetic
resonance study on pMTJ stacks with diffusion barrier layers. J. Phys. D Appl. Phys. 51, 1–7
(2018)
83. S.Y. Jang, S. Lim, S. Lee, Magnetic dead layer in amorphous CoFeB layers with various top
and bottom structures. J. Appl. Phys. 107, 09C707 (2010)
84. S.Y. Jang, C.-Y. You, S. Lim, S. Lee, Annealing effects on the magnetic dead layer and
saturation magnetization in unit structures relevant to a synthetic ferrimagnetic free structure.
J. Appl. Phys. 109, 013901 (2011)
85. K. Oguz, P. Jivrajka, M. Venkatesan, G. Feng, J. Coey, Magnetic dead layers in sputtered Co
40 Fe 40 B 20 films. J. Appl. Phys. 103, 07B526 (2008)
86. H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, H. Ohno, Perpendicularanisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO
recording structure. Appl. Phys. Lett. 101, 022414 (2012)
87. Y. Huai, M. Pakala, Spin scattering and heat assisted switching of a magnetic element (Google
Patents, 2006)
88. L.T. Tran, Thermal-assisted switching array configuration for MRAM (Google Patents, 2005)
89. I. Prejbeanu, M. Kerekes, R.C. Sousa, H. Sibuet, O. Redon, B. Dieny et al., Thermally assisted
MRAM. J. Phys. Condens. Matter 19, 165218 (2007)
90. J. Wang, P. Freitas, Low-current blocking temperature writing of double barrier magnetic
random access memory cells. Appl. Phys. Lett. 84, 945–947 (2004)
91. W. Kang, Y. Cheng, Y. Zhang, D. Ravelosona, W. Zhao, Readability challenges in deeply
scaled STT-MRAM, in Non-volatile Memory Technology Symposium (NVMTS), 2014 14th
Annual (2014), pp. 1–4
92. Y. Zhang, X. Wang, Y. Chen, STT-RAM cell design optimization for persistent and nonpersistent error rate reduction: a statistical design view, in Proceedings of the International
Conference on Computer-Aided Design (2011), pp. 471–477
93. W. Zhao, Y. Zhang, T. Devolder, J.-O. Klein, D. Ravelosona, C. Chappert et al., Failure and
reliability analysis of STT-MRAM. Microelectron. Reliab. 52, 1848–1852 (2012)
94. S. Ikeda, J. Hayakawa, Y.M. Lee, R. Sasaki, T. Meguro, F. Matsukura et al., Dependence
of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during
MgO sputtering. Jpn. J. Appl. Phys. 44, L1442 (2005)
95. Y. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, H. Ohno, Effect of electrode composition on the
tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel
barrier. Appl. Phys. Lett. 90, 212507 (2007)
96. S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, K. Ando, Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions. Nat. Mater. 3, 868
(2004)
97. S. Yuasa, D. Djayaprawira, Giant tunnel magnetoresistance in magnetic tunnel junctions with
a crystalline MgO (0 0 1) barrier. J. Phys. D Appl. Phys. 40, R337 (2007)
98. X. Chen, P.P. Freitas, Magnetic tunnel junction based on MgO barrier prepared by natural
oxidation and direct sputtering deposition. Nano-Micro Lett. 4, 25–29 (2012)
99. S. Yuasa, A. Fukushima, H. Kubota, Y. Suzuki, K. Ando, Giant tunneling magnetoresistance
up to 410% at room temperature in fully epitaxial Co/Mg O/Co magnetic tunnel junctions
with bcc Co (001) electrodes. Appl. Phys. Lett. 89, 042505 (2006)
100. L. Néel, Magnetisme-sur un nouveau mode de couplage entre les animantations de deux
couches minces ferromagnetiques. Comptes Rendus Hebdomadaires Des Seances De L
Academie Des Sciences 255, 1676–2000 (1962)
101. J. Moritz, F. Garcia, J. Toussaint, B. Dieny, J. Nozieres, Orange peel coupling in multilayers
with perpendicular magnetic anisotropy: application to (Co/Pt)-based exchange-biased spinvalves. EPL (Europhys. Lett.) 65, 123 (2004)
102. B. Schrag, A. Anguelouch, S. Ingvarsson, G. Xiao, Y. Lu, P. Trouilloud et al., Néel “orangepeel” coupling in magnetic tunneling junction devices. Appl. Phys. Lett. 77, 2373–2375
(2000)