Spin Transfer Torque Magnetoresistive Random Access Memory
93
6. J. DeBrosse, D. Gogl, A. Bette, H. Hoenigschmid, R. Robertazzi, C. Arndt et al., A high-speed
128-kb MRAM core for future universal memory applications. IEEE J. Solid-State Circuits
39, 678–683 (2004)
7. L. Thomas, G. Jan, S. Le, S. Serrano-Guisan, Y.-J. Lee, H. Liu, et al., Probing magnetic
properties of STT-MRAM devices down to sub-20 nm using spin-torque FMR, in Electron
Devices Meeting (IEDM), 2017 IEEE International (2017), pp. 38.4.1–38.4.4
8. L. Thomas, J. Guenole, L. Son, S. Serrano-Guisan, L. Yuan-Jen, L. Huanlong, et al.,
Development of perpendicular STT-MRAM for last level cache applications
9. W. Xu, H. Sun, X. Wang, Y. Chen, T. Zhang, Design of last-level on-chip cache using spintorque transfer RAM (STT RAM). IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 19,
483–493 (2011)
10. R.C. Sousa, I.L. Prejbeanu, Non-volatile magnetic random access memories (MRAM). C R
Phys. 6, 1013–1021 (2005)
11. J.S. Meena, S.M. Sze, U. Chand, T.-Y. Tseng, Overview of emerging nonvolatile memory
technologies. Nanoscale Res. Lett. 9, 526 (2014)
12. S.A. Wolf, J. Lu, M.R. Stan, E. Chen, D.M. Treger, The promise of nanomagnetics and
spintronics for future logic and universal memory. Proc. IEEE 98, 2155–2168 (2010)
13. G. Binasch, P. Grünberg, F. Saurenbach, W. Zinn, Enhanced magnetoresistance in layered
magnetic structures with antiferromagnetic interlayer exchange. Phys. Rev. B 39, 4828 (1989)
14. M.N. Baibich, J.M. Broto, A. Fert, F.N. Van Dau, F. Petroff, P. Etienne et al., Giant
magnetoresistance of (001) Fe/(001) Cr magnetic superlattices. Phys. Rev. Lett. 61, 2472
(1988)
15. K. Nagasaka, CPP-GMR technology for magnetic read heads of future high-density recording
systems. J. Magn. Magn. Mater. 321, 508–511 (2009)
16. C. Tsang, R.E. Fontana, T. Lin, D.E. Heim, V.S. Speriosu, B.A. Gurney et al., Design, fabrication and testing of spin-valve read heads for high density recording. IEEE Trans. Magn. 30,
3801–3806 (1994)
17. K. Shimazawa, Y. Tsuchiya, T. Mizuno, S. Hara, T. Chou, D. Miyauchi et al., CPP-GMR film
with ZnO-based novel spacer for future high-density magnetic recording. IEEE Trans. Magn.
46, 1487–1490 (2010)
18. J. Daughton, GMR applications. J. Magn. Magn. Mater. 192, 334–342 (1999)
19. J. Daughton, J. Brown, E. Chen, R. Beech, A. Pohm, W. Kude, Magnetic field sensors using
GMR multilayer. IEEE Trans. Magn. 30, 4608–4610 (1994)
20. S. Parkin, N. More, K. Roche, Oscillations in exchange coupling and magnetoresistance in
metallic superlattice structures: Co/Ru, Co/Cr, and Fe/Cr. Phys. Rev. Lett. 64, 2304 (1990)
21. H. Maehara, K. Nishimura, Y. Nagamine, K. Tsunekawa, T. Seki, H. Kubota et al., Tunnel
magnetoresistance above 170% and resistance–area product of 1 (μm)2 attained by in situ
annealing of ultra-thin MgO tunnel barrier. Appl. Phys. Express 4, 033002 (2011)
22. B. Engel, J. Akerman, B. Butcher, R. Dave, M. DeHerrera, M. Durlam et al., A 4-Mb toggle
MRAM based on a novel bit and switching method. IEEE Trans. Magn. 41, 132–136 (2005)
23. M. Julliere, Tunneling between ferromagnetic films. Phys. Lett. A 54, 225–226 (1975)
24. S. Maekawa, U. Gafvert, Electron tunneling between ferromagnetic films. IEEE Trans. Magn.
18, 707–708 (1982)
25. J. Nowak, J. Raułuszkiewicz, Spin dependent electron tunneling between ferromagnetic films.
J. Magn. Magn. Mater. 109, 79–90 (1992)
26. T. Miyazaki, N. Tezuka, Giant magnetic tunneling effect in Fe/Al2O3/Fe junction. J. Magn.
Magn. Mater. 139, L231–L234 (1995)
27. J.S. Moodera, L.R. Kinder, T.M. Wong, R. Meservey, Large magnetoresistance at room
temperature in ferromagnetic thin film tunnel junctions. Phys. Rev. Lett. 74, 3273 (1995)
28. D. Wang, C. Nordman, J.M. Daughton, Z. Qian, J. Fink, 70% TMR at room temperature for
SDT sandwich junctions with CoFeB as free and reference layers. IEEE Trans. Magn. 40,
2269–2271 (2004)
29. S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. Lee, K. Miura, H. Hasegawa et al., Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in Co Fe B/ Mg O/ Co Fe B
pseudo-spin-valves annealed at high temperature. Appl. Phys. Lett. 93, 082508 (2008)
93
6. J. DeBrosse, D. Gogl, A. Bette, H. Hoenigschmid, R. Robertazzi, C. Arndt et al., A high-speed
128-kb MRAM core for future universal memory applications. IEEE J. Solid-State Circuits
39, 678–683 (2004)
7. L. Thomas, G. Jan, S. Le, S. Serrano-Guisan, Y.-J. Lee, H. Liu, et al., Probing magnetic
properties of STT-MRAM devices down to sub-20 nm using spin-torque FMR, in Electron
Devices Meeting (IEDM), 2017 IEEE International (2017), pp. 38.4.1–38.4.4
8. L. Thomas, J. Guenole, L. Son, S. Serrano-Guisan, L. Yuan-Jen, L. Huanlong, et al.,
Development of perpendicular STT-MRAM for last level cache applications
9. W. Xu, H. Sun, X. Wang, Y. Chen, T. Zhang, Design of last-level on-chip cache using spintorque transfer RAM (STT RAM). IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 19,
483–493 (2011)
10. R.C. Sousa, I.L. Prejbeanu, Non-volatile magnetic random access memories (MRAM). C R
Phys. 6, 1013–1021 (2005)
11. J.S. Meena, S.M. Sze, U. Chand, T.-Y. Tseng, Overview of emerging nonvolatile memory
technologies. Nanoscale Res. Lett. 9, 526 (2014)
12. S.A. Wolf, J. Lu, M.R. Stan, E. Chen, D.M. Treger, The promise of nanomagnetics and
spintronics for future logic and universal memory. Proc. IEEE 98, 2155–2168 (2010)
13. G. Binasch, P. Grünberg, F. Saurenbach, W. Zinn, Enhanced magnetoresistance in layered
magnetic structures with antiferromagnetic interlayer exchange. Phys. Rev. B 39, 4828 (1989)
14. M.N. Baibich, J.M. Broto, A. Fert, F.N. Van Dau, F. Petroff, P. Etienne et al., Giant
magnetoresistance of (001) Fe/(001) Cr magnetic superlattices. Phys. Rev. Lett. 61, 2472
(1988)
15. K. Nagasaka, CPP-GMR technology for magnetic read heads of future high-density recording
systems. J. Magn. Magn. Mater. 321, 508–511 (2009)
16. C. Tsang, R.E. Fontana, T. Lin, D.E. Heim, V.S. Speriosu, B.A. Gurney et al., Design, fabrication and testing of spin-valve read heads for high density recording. IEEE Trans. Magn. 30,
3801–3806 (1994)
17. K. Shimazawa, Y. Tsuchiya, T. Mizuno, S. Hara, T. Chou, D. Miyauchi et al., CPP-GMR film
with ZnO-based novel spacer for future high-density magnetic recording. IEEE Trans. Magn.
46, 1487–1490 (2010)
18. J. Daughton, GMR applications. J. Magn. Magn. Mater. 192, 334–342 (1999)
19. J. Daughton, J. Brown, E. Chen, R. Beech, A. Pohm, W. Kude, Magnetic field sensors using
GMR multilayer. IEEE Trans. Magn. 30, 4608–4610 (1994)
20. S. Parkin, N. More, K. Roche, Oscillations in exchange coupling and magnetoresistance in
metallic superlattice structures: Co/Ru, Co/Cr, and Fe/Cr. Phys. Rev. Lett. 64, 2304 (1990)
21. H. Maehara, K. Nishimura, Y. Nagamine, K. Tsunekawa, T. Seki, H. Kubota et al., Tunnel
magnetoresistance above 170% and resistance–area product of 1 (μm)2 attained by in situ
annealing of ultra-thin MgO tunnel barrier. Appl. Phys. Express 4, 033002 (2011)
22. B. Engel, J. Akerman, B. Butcher, R. Dave, M. DeHerrera, M. Durlam et al., A 4-Mb toggle
MRAM based on a novel bit and switching method. IEEE Trans. Magn. 41, 132–136 (2005)
23. M. Julliere, Tunneling between ferromagnetic films. Phys. Lett. A 54, 225–226 (1975)
24. S. Maekawa, U. Gafvert, Electron tunneling between ferromagnetic films. IEEE Trans. Magn.
18, 707–708 (1982)
25. J. Nowak, J. Raułuszkiewicz, Spin dependent electron tunneling between ferromagnetic films.
J. Magn. Magn. Mater. 109, 79–90 (1992)
26. T. Miyazaki, N. Tezuka, Giant magnetic tunneling effect in Fe/Al2O3/Fe junction. J. Magn.
Magn. Mater. 139, L231–L234 (1995)
27. J.S. Moodera, L.R. Kinder, T.M. Wong, R. Meservey, Large magnetoresistance at room
temperature in ferromagnetic thin film tunnel junctions. Phys. Rev. Lett. 74, 3273 (1995)
28. D. Wang, C. Nordman, J.M. Daughton, Z. Qian, J. Fink, 70% TMR at room temperature for
SDT sandwich junctions with CoFeB as free and reference layers. IEEE Trans. Magn. 40,
2269–2271 (2004)
29. S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. Lee, K. Miura, H. Hasegawa et al., Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in Co Fe B/ Mg O/ Co Fe B
pseudo-spin-valves annealed at high temperature. Appl. Phys. Lett. 93, 082508 (2008)