94
W. C. Law and S. De W. Wong
30. W. Butler, X.-G. Zhang, T. Schulthess, J. MacLaren, Spin-dependent tunneling conductance
of Fe| MgO| Fe sandwiches. Physical Review B 63, 054416 (2001)
31. X.-G. Zhang, W. Butler, Large magnetoresistance in bcc Co/ Mg O/ Co and Fe Co/ Mg O/
Fe Co tunnel junctions. Physical Review B 70, 172407 (2004)
32. J. Mathon, A. Umerski, Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe
(001) junction. Physical Review B 63, 220403 (2001)
33. J.J. Bean, M. Saito, S. Fukami, H. Sato, S. Ikeda, H. Ohno et al., Atomic structure and electronic
properties of MgO grain boundaries in tunnelling magnetoresistive devices. Scientific Reports
7, 45594 (2017)
34. Y. Ke, K. Xia, H. Guo, Oxygen-vacancy-induced diffusive scattering in Fe/MgO/Fe magnetic
tunnel junctions. Phys. Rev. Lett. 105, 236801 (2010)
35. M. Durlam, D. Addie, J. Akerman, B. Butcher, P. Brown, J. Chan, et al., “A 0.18/spl mu/m 4Mb
toggling MRAM,” in IEEE International Electron Devices Meeting 2003, 2003, pp. 34.6.1–
34.6.3.
36. Y. Zheng, J.-G. Zhu, Switching field variation in patterned submicron magnetic film elements.
J. Appl. Phys. 81, 5471–5473 (1997)
37. J. Shi, S. Tehrani, T. Zhu, Y. Zheng, J.-G. Zhu, Magnetization vortices and anomalous
switching in patterned NiFeCo submicron arrays. Appl. Phys. Lett. 74, 2525–2527 (1999)
38. L. Savtchenko, B. N. Engel, N. D. Rizzo, M. F. Deherrera, and J. A. Janesky, “Method of
writing to scalable magnetoresistance random access memory element,” ed: Google Patents,
2003.
39. J. H. Nickel and L. T. Tran, “Thermally-assisted switching of magnetic memory elements,”
ed: Google Patents, 2003.
40. Y. Huai and M. Pakala, “Method and system for providing heat assisted switching of a magnetic
element utilizing spin transfer,” ed: Google Patents, 2006.
41. J. Slaughter, R. Dave, M. Durlam, G. Kerszykowski, K. Smith, K. Nagel, et al., “High speed
toggle MRAM with MgO-based tunnel junctions,” in Electron Devices Meeting, 2005. IEDM
Technical Digest. IEEE International, 2005, pp. 873-876
42. J. Akerman, P. Brown, M. DeHerrera, M. Durlam, E. Fuchs, D. Gajewski et al., Demonstrated
reliability of 4-Mb MRAM. IEEE Trans. Device Mater. Reliab. 4, 428–435 (2004)
43. W. Thomson, XIX. On the electro-dynamic qualities of metals: effects of magnetization on
the electric conductivity of nickel and of iron. Proc. R. Soc. London 8, 546–550 (1857)
44. T. McGuire, R. Potter, Anisotropic magnetoresistance in ferromagnetic 3d alloys. IEEE Trans.
Magn. 11, 1018–1038 (1975)
45. S. Tumanski, Thin film magnetoresistive sensors (CRC Press, 2001)
46. R. Sbiaa, Magnetoresistive read heads: fundamentals and functionality, in Developments in
Data Storage: Materials Perspective (2011), p. 97
47. R. Hunt, A magnetoresistive readout transducer. IEEE Trans. Magn. 7, 150–154 (1971)
48. D. Thompson, Magnetoresistive transducers in high-density magnetic recording, in AIP
Conference Proceedings (1975), pp. 528–533
49. N.F. Mott, The resistance and thermoelectric properties of the transition metals. Proc. R. Soc.
Lond. A 156, 368–382 (1936)
50. S. Huang, T. Chen, C. Chien, Spin polarization of amorphous CoFeB determined by pointcontact Andreev reflection. Appl. Phys. Lett. 92, 242509 (2008)
51. W.H. Butler, Tunneling magnetoresistance from a symmetry filtering effect. Sci. Technol.
Adv. Mater. 9, 014106 (2008)
52. J.C. Slonczewski, Current-driven excitation of magnetic multilayers. J. Magn. Magn. Mater.
159, L1–L7 (1996)
53. L. Berger, Emission of spin waves by a magnetic multilayer traversed by a current. Phys. Rev.
B 54, 9353 (1996)
54. S.S. Parkin, M. Hayashi, L. Thomas, Magnetic domain-wall racetrack memory. Science 320,
190–194 (2008)
55. M. Hayashi, L. Thomas, R. Moriya, C. Rettner, S.S. Parkin, Current-controlled magnetic
domain-wall nanowire shift register. Science 320, 209–211 (2008)
W. C. Law and S. De W. Wong
30. W. Butler, X.-G. Zhang, T. Schulthess, J. MacLaren, Spin-dependent tunneling conductance
of Fe| MgO| Fe sandwiches. Physical Review B 63, 054416 (2001)
31. X.-G. Zhang, W. Butler, Large magnetoresistance in bcc Co/ Mg O/ Co and Fe Co/ Mg O/
Fe Co tunnel junctions. Physical Review B 70, 172407 (2004)
32. J. Mathon, A. Umerski, Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe
(001) junction. Physical Review B 63, 220403 (2001)
33. J.J. Bean, M. Saito, S. Fukami, H. Sato, S. Ikeda, H. Ohno et al., Atomic structure and electronic
properties of MgO grain boundaries in tunnelling magnetoresistive devices. Scientific Reports
7, 45594 (2017)
34. Y. Ke, K. Xia, H. Guo, Oxygen-vacancy-induced diffusive scattering in Fe/MgO/Fe magnetic
tunnel junctions. Phys. Rev. Lett. 105, 236801 (2010)
35. M. Durlam, D. Addie, J. Akerman, B. Butcher, P. Brown, J. Chan, et al., “A 0.18/spl mu/m 4Mb
toggling MRAM,” in IEEE International Electron Devices Meeting 2003, 2003, pp. 34.6.1–
34.6.3.
36. Y. Zheng, J.-G. Zhu, Switching field variation in patterned submicron magnetic film elements.
J. Appl. Phys. 81, 5471–5473 (1997)
37. J. Shi, S. Tehrani, T. Zhu, Y. Zheng, J.-G. Zhu, Magnetization vortices and anomalous
switching in patterned NiFeCo submicron arrays. Appl. Phys. Lett. 74, 2525–2527 (1999)
38. L. Savtchenko, B. N. Engel, N. D. Rizzo, M. F. Deherrera, and J. A. Janesky, “Method of
writing to scalable magnetoresistance random access memory element,” ed: Google Patents,
2003.
39. J. H. Nickel and L. T. Tran, “Thermally-assisted switching of magnetic memory elements,”
ed: Google Patents, 2003.
40. Y. Huai and M. Pakala, “Method and system for providing heat assisted switching of a magnetic
element utilizing spin transfer,” ed: Google Patents, 2006.
41. J. Slaughter, R. Dave, M. Durlam, G. Kerszykowski, K. Smith, K. Nagel, et al., “High speed
toggle MRAM with MgO-based tunnel junctions,” in Electron Devices Meeting, 2005. IEDM
Technical Digest. IEEE International, 2005, pp. 873-876
42. J. Akerman, P. Brown, M. DeHerrera, M. Durlam, E. Fuchs, D. Gajewski et al., Demonstrated
reliability of 4-Mb MRAM. IEEE Trans. Device Mater. Reliab. 4, 428–435 (2004)
43. W. Thomson, XIX. On the electro-dynamic qualities of metals: effects of magnetization on
the electric conductivity of nickel and of iron. Proc. R. Soc. London 8, 546–550 (1857)
44. T. McGuire, R. Potter, Anisotropic magnetoresistance in ferromagnetic 3d alloys. IEEE Trans.
Magn. 11, 1018–1038 (1975)
45. S. Tumanski, Thin film magnetoresistive sensors (CRC Press, 2001)
46. R. Sbiaa, Magnetoresistive read heads: fundamentals and functionality, in Developments in
Data Storage: Materials Perspective (2011), p. 97
47. R. Hunt, A magnetoresistive readout transducer. IEEE Trans. Magn. 7, 150–154 (1971)
48. D. Thompson, Magnetoresistive transducers in high-density magnetic recording, in AIP
Conference Proceedings (1975), pp. 528–533
49. N.F. Mott, The resistance and thermoelectric properties of the transition metals. Proc. R. Soc.
Lond. A 156, 368–382 (1936)
50. S. Huang, T. Chen, C. Chien, Spin polarization of amorphous CoFeB determined by pointcontact Andreev reflection. Appl. Phys. Lett. 92, 242509 (2008)
51. W.H. Butler, Tunneling magnetoresistance from a symmetry filtering effect. Sci. Technol.
Adv. Mater. 9, 014106 (2008)
52. J.C. Slonczewski, Current-driven excitation of magnetic multilayers. J. Magn. Magn. Mater.
159, L1–L7 (1996)
53. L. Berger, Emission of spin waves by a magnetic multilayer traversed by a current. Phys. Rev.
B 54, 9353 (1996)
54. S.S. Parkin, M. Hayashi, L. Thomas, Magnetic domain-wall racetrack memory. Science 320,
190–194 (2008)
55. M. Hayashi, L. Thomas, R. Moriya, C. Rettner, S.S. Parkin, Current-controlled magnetic
domain-wall nanowire shift register. Science 320, 209–211 (2008)