9.11
9.12
(a)
(b)
(c)
(d)
(e)
9.13
20
2.1
22
0.0
700 nm monochromatic light with an irradiance of 20 mW/cm 2 is incident on a 100 cm 2 solar cell. External
quantum efficiency of the solar cell at the wavelength of 700 nm is 80%. What is the maximum photo
generated current achievable with this solar cell?
Consider a crystalline silicon p-n junction solar cell with an area A = 10 −4 m 2 and thickness of 1.8 × 10 −4 m.
The doping of the p- and n-type regions of the solar cell is N A = 4 × 10 22 m −3 and N D = 2 × 10 25 m −3
respectively. The quality of the crystalline silicon regions is expressed by the lifetime and mobility of minority
carriers which in p-type is τ n = 1.5 × 10 −4 s and μ n = 0.07 m 2 V −1 s −1 respectively, and in n-type is τ p = 7.0 ×
10 −5 s and μ p = 0.023 m 2 V −1 s −1 respectively. Under standard test conditions the solar cell generates a
photocurrent of I ph = 0.041 A. Assume that all the doping atoms are ionized, the solar cell is an ideal diode and
the short circuit current density equals the photocurrent density. Also assume room temperature (300 K) and
thermal equilibrium conditions.
Calculate the open circuit voltage V oc , short circuit current density J sc , and fill factor FF.
Calculate the minority-carriers concentrations in p− and n-type regions.
Calculate the positions of the Fermi levels (E f – E c ) inside p and n-type regions.
Calculate the built-in voltage across the p-n junction.
Draw the band diagram of the solar cell under illumination at the short circuit and the open circuit
condition, showing the Fermi levels and built-in voltage.
Consider a Si n + -p junction solar cell with external parameters J sc , V oc , and FF. The thickness of the n + -type
region is much smaller than that of the p-type region. This solar cell is uniformly illuminated with generation
rate, G L , leading to an excess carrier concentration Δn and Δp. If the solar cell is in open circuit condition,
show that in open circuit condition,
9.12
(a)
(b)
(c)
(d)
(e)
9.13
20
2.1
22
0.0
700 nm monochromatic light with an irradiance of 20 mW/cm 2 is incident on a 100 cm 2 solar cell. External
quantum efficiency of the solar cell at the wavelength of 700 nm is 80%. What is the maximum photo
generated current achievable with this solar cell?
Consider a crystalline silicon p-n junction solar cell with an area A = 10 −4 m 2 and thickness of 1.8 × 10 −4 m.
The doping of the p- and n-type regions of the solar cell is N A = 4 × 10 22 m −3 and N D = 2 × 10 25 m −3
respectively. The quality of the crystalline silicon regions is expressed by the lifetime and mobility of minority
carriers which in p-type is τ n = 1.5 × 10 −4 s and μ n = 0.07 m 2 V −1 s −1 respectively, and in n-type is τ p = 7.0 ×
10 −5 s and μ p = 0.023 m 2 V −1 s −1 respectively. Under standard test conditions the solar cell generates a
photocurrent of I ph = 0.041 A. Assume that all the doping atoms are ionized, the solar cell is an ideal diode and
the short circuit current density equals the photocurrent density. Also assume room temperature (300 K) and
thermal equilibrium conditions.
Calculate the open circuit voltage V oc , short circuit current density J sc , and fill factor FF.
Calculate the minority-carriers concentrations in p− and n-type regions.
Calculate the positions of the Fermi levels (E f – E c ) inside p and n-type regions.
Calculate the built-in voltage across the p-n junction.
Draw the band diagram of the solar cell under illumination at the short circuit and the open circuit
condition, showing the Fermi levels and built-in voltage.
Consider a Si n + -p junction solar cell with external parameters J sc , V oc , and FF. The thickness of the n + -type
region is much smaller than that of the p-type region. This solar cell is uniformly illuminated with generation
rate, G L , leading to an excess carrier concentration Δn and Δp. If the solar cell is in open circuit condition,
show that in open circuit condition,