11
Introduction
The effects of both within-die and die-to-die process parameter variations
will be discussed. The goal of the predictive technology model (PTM) and
process compact model (PCM) is to address key design needs, such as variability and reliability, for robust system integration. The predictive technology model, coupled with circuit simulation tools, significantly improves
design productivity, providing insight into the relationship between technology/design choices and circuit performance. Use of PTM as a predictive base
for exploratory circuit design with extremely scaled CMOS will be shown.
As device physical gate length is reduced, various leakage currents and
device parameter variations become the most important considerations for
device optimisation. For process engineers, the key tool is the PCM, which
provides recipes to meet performance specifications in the face of process
variations and dopant fluctuations. TCAD applications include technology
and design rule development, extraction of compact models, and more generally, design for manufacturing (DFM). TCAD is expected to be more useful
for the 22 nm technology node and beyond, as the capabilities of TCAD can
be enhanced to follow the paradigm shifts to processes and materials being
considered in nanodevices. In Chapter 9, a methodology for seamless flow
of pertinent information between the process and design engineers without
the need for disclosing process detail will be presented. Using the global
extraction strategy, compact SPICE model parameters have been obtained
as a polynomial function of process parameter variations. In this chapter
we also discuss the importance of TCAD in constructing process compact
models for circuit simulation. A technology-aware circuit design and optimisation technique is discussed. The interactive visual optimisation process using design of experiments (DOE) in a parallel coordinate plot allows
one to explore device performance criteria. PCM has been used to find the
optimum process conditions to meet a set of device specifications for strainengineered MOSFETs. Utilisation of TCAD tools for process optimisation for
the overall design for manufacturing (DFM) solution is demonstrated.
1.10 Process-Aware Design
The technology choices beyond the 22 nm node will have an ever-increasing
impact on the circuit design techniques, and thus an ever closer interaction
between the process technologist and circuit designer is required, starting
from the technology definition phase. It is now widely recognised that process variation is emerging as a fundamental challenge to integrated circuit
design due to CMOS technology scaling, and it will have serious impact on
the circuit performance. While some of the negative effects of variability can
be handled with improvements in the manufacturing process, the industry
has accepted the fact that some of the effects are better mitigated during
Introduction
The effects of both within-die and die-to-die process parameter variations
will be discussed. The goal of the predictive technology model (PTM) and
process compact model (PCM) is to address key design needs, such as variability and reliability, for robust system integration. The predictive technology model, coupled with circuit simulation tools, significantly improves
design productivity, providing insight into the relationship between technology/design choices and circuit performance. Use of PTM as a predictive base
for exploratory circuit design with extremely scaled CMOS will be shown.
As device physical gate length is reduced, various leakage currents and
device parameter variations become the most important considerations for
device optimisation. For process engineers, the key tool is the PCM, which
provides recipes to meet performance specifications in the face of process
variations and dopant fluctuations. TCAD applications include technology
and design rule development, extraction of compact models, and more generally, design for manufacturing (DFM). TCAD is expected to be more useful
for the 22 nm technology node and beyond, as the capabilities of TCAD can
be enhanced to follow the paradigm shifts to processes and materials being
considered in nanodevices. In Chapter 9, a methodology for seamless flow
of pertinent information between the process and design engineers without
the need for disclosing process detail will be presented. Using the global
extraction strategy, compact SPICE model parameters have been obtained
as a polynomial function of process parameter variations. In this chapter
we also discuss the importance of TCAD in constructing process compact
models for circuit simulation. A technology-aware circuit design and optimisation technique is discussed. The interactive visual optimisation process using design of experiments (DOE) in a parallel coordinate plot allows
one to explore device performance criteria. PCM has been used to find the
optimum process conditions to meet a set of device specifications for strainengineered MOSFETs. Utilisation of TCAD tools for process optimisation for
the overall design for manufacturing (DFM) solution is demonstrated.
1.10 Process-Aware Design
The technology choices beyond the 22 nm node will have an ever-increasing
impact on the circuit design techniques, and thus an ever closer interaction
between the process technologist and circuit designer is required, starting
from the technology definition phase. It is now widely recognised that process variation is emerging as a fundamental challenge to integrated circuit
design due to CMOS technology scaling, and it will have serious impact on
the circuit performance. While some of the negative effects of variability can
be handled with improvements in the manufacturing process, the industry
has accepted the fact that some of the effects are better mitigated during