247
Reliability and Degradation of Strain-Engineered MOSFETs
physics. Technology CAD has been used to study the effects of strain on the
negative bias temperature instabilities in p-MOSFETs and hot-carrier injection in n-MOSFETs.
Review Questions
1. What is NBTI?
2. What is HCI?
3. What is bias temperature instability?
4. NBTI is characterised by an increase in threshold voltage. (True/False)
5. The NBTI mechanism is due to breaking of Si-H bonds at the SiO 2 /
Si interface. (True/False)
6. Negligible PBTI effects are observed in n-MOSFETs. (True/False)
7. High-k dielectrics contribute to threshold voltage shift. (True/False)
8. What are the effects of strain on NBTI?
9. Interfacial defects intrinsic to the presence of strain affect BTI. (True/
False)
10. An increase in defects increases leakage current through the gate
dielectric. (True/False)
References
1. Y. Miura and Y. Matukura, Investigation of Silicon–Silicon Dioxide Interface
Using MOS Structure, Jpn. J. Appl. Phys., 5, 180–180, 1966.
2. M. A. Alam and S. Mahapatra, A Comprehensive Model of PMOS NBTI
Degradation, Microelectronics Reliability, 45, 71–81, 2005.
3. S. Mahapatra, D. Saha, D. Varghese, and P. B. Kumar, On the Generation and
Recovery of Interface Traps in MOSFETs Subjected to NBTI, FN and HCI Stress,
IEEE Trans. Electron Dev., 53, 1583–1591, 2006.
4. H. Kufluoglu and M. A. Alam, A Geometrical Unification of the Theories of
NBTI and HCI Time-Exponents and Its Implications for Ultra-Scaled Planar and
Surround Gate MOSFETs, IEEE IEDM Tech. Dig., 113–116, 2004.
5. C. K. Maiti, S. Chattopadhyay, and L. K. Bera, Strained-Si Heterostructure Field
Effect Devices, CRC Press, Boca Raton, FL, 2007.
6. S. Thompson, M. Armstrong, C. Auth, M. Alavi, M. Buehler, R. Chau, S. Cea, T.
Ghani, G. Glass, T. Hoffman, C.-H. Jan, C. Kenyon, J. Klaus, K. Kuhn, Zhiyong
Ma, B. Mcintyre, K. Mistry, A. Murthy, B. Obradovic, R. Nagisetty, P. Nguyen, S.
Reliability and Degradation of Strain-Engineered MOSFETs
physics. Technology CAD has been used to study the effects of strain on the
negative bias temperature instabilities in p-MOSFETs and hot-carrier injection in n-MOSFETs.
Review Questions
1. What is NBTI?
2. What is HCI?
3. What is bias temperature instability?
4. NBTI is characterised by an increase in threshold voltage. (True/False)
5. The NBTI mechanism is due to breaking of Si-H bonds at the SiO 2 /
Si interface. (True/False)
6. Negligible PBTI effects are observed in n-MOSFETs. (True/False)
7. High-k dielectrics contribute to threshold voltage shift. (True/False)
8. What are the effects of strain on NBTI?
9. Interfacial defects intrinsic to the presence of strain affect BTI. (True/
False)
10. An increase in defects increases leakage current through the gate
dielectric. (True/False)
References
1. Y. Miura and Y. Matukura, Investigation of Silicon–Silicon Dioxide Interface
Using MOS Structure, Jpn. J. Appl. Phys., 5, 180–180, 1966.
2. M. A. Alam and S. Mahapatra, A Comprehensive Model of PMOS NBTI
Degradation, Microelectronics Reliability, 45, 71–81, 2005.
3. S. Mahapatra, D. Saha, D. Varghese, and P. B. Kumar, On the Generation and
Recovery of Interface Traps in MOSFETs Subjected to NBTI, FN and HCI Stress,
IEEE Trans. Electron Dev., 53, 1583–1591, 2006.
4. H. Kufluoglu and M. A. Alam, A Geometrical Unification of the Theories of
NBTI and HCI Time-Exponents and Its Implications for Ultra-Scaled Planar and
Surround Gate MOSFETs, IEEE IEDM Tech. Dig., 113–116, 2004.
5. C. K. Maiti, S. Chattopadhyay, and L. K. Bera, Strained-Si Heterostructure Field
Effect Devices, CRC Press, Boca Raton, FL, 2007.
6. S. Thompson, M. Armstrong, C. Auth, M. Alavi, M. Buehler, R. Chau, S. Cea, T.
Ghani, G. Glass, T. Hoffman, C.-H. Jan, C. Kenyon, J. Klaus, K. Kuhn, Zhiyong
Ma, B. Mcintyre, K. Mistry, A. Murthy, B. Obradovic, R. Nagisetty, P. Nguyen, S.