241
Reliability and Degradation of Strain-Engineered MOSFETs
600
500
400
300
g
m (mS/mm)
100
200
0
0.0
0.2
0.4
0.6
Gate Bias (V)
Before electrical stress
PSS-nMOSFET
L g = 45 nm
After electrical stress
0.8
FIGURE 8.7
Simulated transconductance showing device degradation. Decrease in transconductance is
observed.
2400
2000
1600
1200
Drain Current (μA/μm)
400
800
0
0.0
0.2
0.4
0.6
Gate Bias (V)
Before electrical stress
PSS-nMOSFET
L g = 45 nm
After electrical stress
0.8
1.0
1.2
1.4
FIGURE 8.8
Simulated I ds -V ds characteristics.
Reliability and Degradation of Strain-Engineered MOSFETs
600
500
400
300
g
m (mS/mm)
100
200
0
0.0
0.2
0.4
0.6
Gate Bias (V)
Before electrical stress
PSS-nMOSFET
L g = 45 nm
After electrical stress
0.8
FIGURE 8.7
Simulated transconductance showing device degradation. Decrease in transconductance is
observed.
2400
2000
1600
1200
Drain Current (μA/μm)
400
800
0
0.0
0.2
0.4
0.6
Gate Bias (V)
Before electrical stress
PSS-nMOSFET
L g = 45 nm
After electrical stress
0.8
1.0
1.2
1.4
FIGURE 8.8
Simulated I ds -V ds characteristics.