203
Noise in Strain-Engineered Devices
23. G. Ghibaudo, O. Roux, Ch. Nguyen-Duc, F. Balestra, and J. Brini, Improved
Analysis of Low-Frequency Noise in Field-Effect MOS Transistors, Phys. Stat.
Sol. A, 124, 571–581, 1991.
24. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, A Unified Model for the Flicker
Noise in Metal-Oxide-Semiconductor Field-Effect Transistors, IEEE Trans.
Electron Dev., 37, 654–665, 1990.
25. G. Reimbold, Modified 1/f Trapping Noise Theory and Experiments in MOS
Transistors Biased from Weak to Strong Inversion-Influence of Interface States,
IEEE Trans. Electron Dev., ED-31, 1190–1198, 1984.
26. X. Li, C. Barros, E. P. Vandamme, and L. K. J. Vandamme, Parameter Extraction
and 1/f Noise in a Surface and a Bulk-Type, p-chAnnel LDD MOSFET, SolidState Electron., 37, 1853–1862, 1994.
27. F. N. Hooge and L. K. J. Vandamme, Lattice Scattering Causes 1/f Noise, Phys.
Lett. A, 66, 315–316, 1978.
28. J. Rhayem, D. Rigaud, A. Eya’a, and M. Valenza, 1/f Noise in Metal-OxideSemiconductor Transistors Biased in Weak Inversion, J. Appl. Phys., 89, 4192–
4194, 2001.
29. T. G. M. Kleinpenning, On 1/f Noise and Random Telegraph Noise in Very
Small Electronic Devices, Physica B, 164, 331–334, 1990.
30. N. V. Amarasinghe, Z. Çelik-Butler, and A. Keshavarz, Extraction of Oxide Trap
Properties Using Temperature Dependence of Random Telegraph Signals in
Submicron Metal-Oxide-Semiconductor Field-Effect Transistors, J. Appl. Phys.,
89, 5526–5532, 2001.
31. N. V. Amarsinghe and Z. C. Butler, Complex Random Telegraph Signals in
0.06µm 2 MDD nMOSFETs, Solid State Electron., 44, 1013–1019, 2000.
32. W. Shockley and W. T. Read Jr., Statistics of the Recombinations of Holes and
Electrons, Phys. Rev., 87, 835–842, 1952.
33. J.-S. Lim, Strain Effects on Silicon CMOS Transistors: Threshold Voltage, Gate
Tunneling Current, and 1/f Noise Characteristics, PhD thesis, University of
Florida, 2007.
34. J. Lim, X. Yang, T. Nishida, and S. E. Thompson, Measurement of Conduction
Band Deformation Constants Using Gate Direct Tunneling Current in n-Type
Metal Oxide Semiconductor Field Effect Transistors under Mechanical Stress,
Appl. Phys. Lett., 89, 073509, 2006.
35. J. Chang, A. A. Abidi, and C. R. Viswanathan, Flicker Noise in CMOS Transistors
from Subthreshold to Strong Inversion at Various Temperatures, IEEE Trans.
Electron Dev., 41, 1965–1971, 1994.
36. M. Ertürk, T. Xia, and W. F. Clark, Gate Voltage Dependence of MOSFET 1/f
Noise Statistics, IEEE Electron. Dev. Lett., 28, 812–814, 2007.
37. C. K. Maiti, L. K. Bera, S. S. Dey, D. K. Nayak, and N. B. Chakrabarti, Hole
Mobility Enhancement in Strained-Si p-MOSFETs under High Vertical Field,
Solid-State Electron., 41, 1863–1869, 1997.
38. L. K. Bera, Studies on Applications of Strained-Si for Heterostructure Field-Effect
Transistors (HFETs), PhD thesis, Indian Institute of Technology, Kharagpur, 1998.
39. van der Ziel A, Flicker Noise in Electronic Devices, Adv. Electronics Electron
Phys., 49, 225–297, 1979.
Noise in Strain-Engineered Devices
23. G. Ghibaudo, O. Roux, Ch. Nguyen-Duc, F. Balestra, and J. Brini, Improved
Analysis of Low-Frequency Noise in Field-Effect MOS Transistors, Phys. Stat.
Sol. A, 124, 571–581, 1991.
24. K. K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, A Unified Model for the Flicker
Noise in Metal-Oxide-Semiconductor Field-Effect Transistors, IEEE Trans.
Electron Dev., 37, 654–665, 1990.
25. G. Reimbold, Modified 1/f Trapping Noise Theory and Experiments in MOS
Transistors Biased from Weak to Strong Inversion-Influence of Interface States,
IEEE Trans. Electron Dev., ED-31, 1190–1198, 1984.
26. X. Li, C. Barros, E. P. Vandamme, and L. K. J. Vandamme, Parameter Extraction
and 1/f Noise in a Surface and a Bulk-Type, p-chAnnel LDD MOSFET, SolidState Electron., 37, 1853–1862, 1994.
27. F. N. Hooge and L. K. J. Vandamme, Lattice Scattering Causes 1/f Noise, Phys.
Lett. A, 66, 315–316, 1978.
28. J. Rhayem, D. Rigaud, A. Eya’a, and M. Valenza, 1/f Noise in Metal-OxideSemiconductor Transistors Biased in Weak Inversion, J. Appl. Phys., 89, 4192–
4194, 2001.
29. T. G. M. Kleinpenning, On 1/f Noise and Random Telegraph Noise in Very
Small Electronic Devices, Physica B, 164, 331–334, 1990.
30. N. V. Amarasinghe, Z. Çelik-Butler, and A. Keshavarz, Extraction of Oxide Trap
Properties Using Temperature Dependence of Random Telegraph Signals in
Submicron Metal-Oxide-Semiconductor Field-Effect Transistors, J. Appl. Phys.,
89, 5526–5532, 2001.
31. N. V. Amarsinghe and Z. C. Butler, Complex Random Telegraph Signals in
0.06µm 2 MDD nMOSFETs, Solid State Electron., 44, 1013–1019, 2000.
32. W. Shockley and W. T. Read Jr., Statistics of the Recombinations of Holes and
Electrons, Phys. Rev., 87, 835–842, 1952.
33. J.-S. Lim, Strain Effects on Silicon CMOS Transistors: Threshold Voltage, Gate
Tunneling Current, and 1/f Noise Characteristics, PhD thesis, University of
Florida, 2007.
34. J. Lim, X. Yang, T. Nishida, and S. E. Thompson, Measurement of Conduction
Band Deformation Constants Using Gate Direct Tunneling Current in n-Type
Metal Oxide Semiconductor Field Effect Transistors under Mechanical Stress,
Appl. Phys. Lett., 89, 073509, 2006.
35. J. Chang, A. A. Abidi, and C. R. Viswanathan, Flicker Noise in CMOS Transistors
from Subthreshold to Strong Inversion at Various Temperatures, IEEE Trans.
Electron Dev., 41, 1965–1971, 1994.
36. M. Ertürk, T. Xia, and W. F. Clark, Gate Voltage Dependence of MOSFET 1/f
Noise Statistics, IEEE Electron. Dev. Lett., 28, 812–814, 2007.
37. C. K. Maiti, L. K. Bera, S. S. Dey, D. K. Nayak, and N. B. Chakrabarti, Hole
Mobility Enhancement in Strained-Si p-MOSFETs under High Vertical Field,
Solid-State Electron., 41, 1863–1869, 1997.
38. L. K. Bera, Studies on Applications of Strained-Si for Heterostructure Field-Effect
Transistors (HFETs), PhD thesis, Indian Institute of Technology, Kharagpur, 1998.
39. van der Ziel A, Flicker Noise in Electronic Devices, Adv. Electronics Electron
Phys., 49, 225–297, 1979.